Na-doped Cu2ZnSnS4 single crystal grown by traveling-heater method

Nagaoka, Akira; Scarpulla, Michael A.; Yoshino, Kenji

doi:10.1016/j.jcrysgro.2016.08.014

Title: Na-doped Cu2ZnSnS4 single crystal grown by traveling-heater method

Full Record
Other Related Research

Authors:: Nagaoka, Akira; Scarpulla, Michael A.; Yoshino, Kenji

Publication Date:: Tue Nov 01 00:00:00 EDT 2016

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1396665

Grant/Contract Number:: SC0001630

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Journal of Crystal Growth

Additional Journal Information:: Journal Name: Journal of Crystal Growth Journal Volume: 453 Journal Issue: C; Journal ID: ISSN 0022-0248

Publisher:: Elsevier

Country of Publication:: Netherlands

Language:: English

Citation Formats


                    Nagaoka, Akira, Scarpulla, Michael A., and Yoshino, Kenji. Na-doped Cu2ZnSnS4 single crystal grown by traveling-heater method.  Netherlands: N. p., 2016. 
Web.  doi:10.1016/j.jcrysgro.2016.08.014.

Copy to clipboard


                    Nagaoka, Akira, Scarpulla, Michael A., & Yoshino, Kenji. Na-doped Cu2ZnSnS4 single crystal grown by traveling-heater method.  Netherlands.  https://doi.org/10.1016/j.jcrysgro.2016.08.014

Copy to clipboard


                    Nagaoka, Akira, Scarpulla, Michael A., and Yoshino, Kenji. Tue .  
"Na-doped Cu2ZnSnS4 single crystal grown by traveling-heater method".  Netherlands.  https://doi.org/10.1016/j.jcrysgro.2016.08.014.

Copy to clipboard


                    
@article{osti_1396665,

  title        = {Na-doped Cu2ZnSnS4 single crystal grown by traveling-heater method},

  author       = {Nagaoka, Akira and Scarpulla, Michael A. and Yoshino, Kenji},

  abstractNote = {},

  doi          = {10.1016/j.jcrysgro.2016.08.014},

  journal      = {Journal of Crystal Growth},

  number       = C,

  volume       = 453,

  place        = {Netherlands},

  year         = {Tue Nov 01 00:00:00 EDT 2016},

  month        = {Tue Nov 01 00:00:00 EDT 2016}

}

Copy to clipboard

Journal Article:

Free Publicly Available Full Text

Accepted Manuscript (Publisher)

Publisher's Version of Record
https://doi.org/10.1016/j.jcrysgro.2016.08.014

Other availability

Search WorldCat to find libraries that may hold this journal

Citation Metrics:

Cited by: 11 works

Citation information provided by
Web of Science

Save / Share:

Export Metadata

Save to My Library

Similar Records in DOE PAGES and OSTI.GOV collections:

Na-doped Cu2ZnSnS4 single crystal grown by traveling-heater method

Journal Article Nagaoka, Akira ; Scarpulla, Michael A. ; Yoshino, Kenji - Journal of Crystal Growth

Not provided.
https://doi.org/10.1016/j.jcrysgro.2016.08.014
Growth and characterization of Cu2ZnSn(S Se1−)4 single crystal grown by traveling heater method

Journal Article Nagaoka, Akira ; Katsube, Ryoji ; Nakatsuka, Shigeru ; ... - Journal of Crystal Growth
Cited by 10
https://doi.org/10.1016/j.jcrysgro.2015.04.012
Group-V Doping Impact on Cd-Rich CdTe Single Crystals Grown by Traveling-Heater Method

Conference Nagaoka, Akira ; Yoshino, Kenji ; Nose, Yoshitaro ; ...

Cd-rich CdTe single crystals were grown from Cd solvent in the traveling-heater method (THM) rather than the more common Te solvent used for high-resistivity CdTe. The growth process from Cd solution in terms of the solid-liquid interface shape and group-V doping under Cd-rich condition were investigated. Stable, flat solid-liquid interfaces can be obtained by optimizing THM furnace temperature profile. An apparent doping limit in the 10^16 to 10^17 cm^ -3 range which scales weakly with increasing group-V element concentrations in the Cd-rich CdTe samples were indicated from capacitance-voltage measurement. The two-photon excitation time-resolved photoluminescence revealed a bulk lifetime of 20-40more » ns.« less
https://doi.org/10.1109/PVSC.2017.8366462
Growth and characterization of Arsenic doped CdTe single crystals grown by Cd-solvent traveling-heater method

Journal Article Nagaoka, Akira ; Han, Kyu -Bum ; Misra, Sudhajit ; ... - Journal of Crystal Growth

We report the growth of p-type As-doped, Cd-rich CdTe single crystals using metallic Cd as the solvent in the traveling-heater method. We investigate the growth process from Cd solution in terms of the solid-liquid interface shape and the effects of As incorporation on p-type doping. The resulting CdTe crystals have Cd-rich composition which enhances p-type doping. The As doping efficacy was measured for As concentrations by the combination of inductively coupled plasma mass spectrometry, capacitance-voltage measurements. As a result, the p-type doping concentration varied from 6 × 10¹⁵ to 8 × 10¹⁶ cm^–3 with increasing As concentration, with an apparentmore » doping limit just below 10¹⁷ cm^–3.« less
Cited by 21
https://doi.org/10.1016/j.jcrysgro.2017.03.002

Full Text Available
Growth and characterization of Arsenic doped CdTe single crystals grown by Cd-solvent traveling-heater method

Journal Article Nagaoka, Akira ; Han, Kyu-Bum ; Misra, Sudhajit ; ... - Journal of Crystal Growth

Not provided.
https://doi.org/10.1016/j.jcrysgro.2017.03.002

Similar Records