Review Article: Reactions of fluorine atoms with silicon, revisited, again

Donnelly, Vincent M.

doi:10.1116/1.4983922

Title: Review Article: Reactions of fluorine atoms with silicon, revisited, again

Journal Article · 30 May 2017 · Journal of Vacuum Science and Technology A

DOI: https://doi.org/10.1116/1.4983922 · OSTI ID:1361942

Donnelly, Vincent M. ^[1]

Department of Chemical and Biomolecular Engineering, University of Houston, Engineering Bldg. D, 4800 Calhoun Rd., Houston, Texas 77204

Not Available

View Journal Article

Cite

Export

Save

Sponsoring Organization:: USDOE

OSTI ID:: 1361942

Journal Information:: Journal of Vacuum Science and Technology A, Journal Name: Journal of Vacuum Science and Technology A Journal Issue: 5 Vol. 35; ISSN 0734-2101; ISSN JVTAD6

Publisher:: American Vacuum SocietyCopyright Statement

Country of Publication:: United States

Language:: English

References (47)

Gas phase reactions of SiF2 with F2 and Cl2 Stanton, A. C.; Freedman, A.; Wormhoudt, J. Chemical Physics Letters, Vol. 122, Issue 3 https://doi.org/10.1016/0009-2614(85)80561-3	journal	December 1985
Control of relative etch rates of SiO2 and Si in plasma etching Heinecke, Rudolf A. H. Solid-State Electronics, Vol. 18, Issue 12 https://doi.org/10.1016/0038-1101(75)90184-7	journal	December 1975
A theoretical study of the electronic spectroscopy of the SiF3 radical Manby, F. R.; Tuckett, R. P.; Knowles, P. J. Chemical Physics Letters, Vol. 342, Issue 5-6 https://doi.org/10.1016/S0009-2614(01)00633-9	journal	July 2001
Chemiluminescence and the reaction of molecular fluorine with silicon Mucha, J. A.; Donnelly, V. M.; Flamm, D. L. The Journal of Physical Chemistry, Vol. 85, Issue 23 https://doi.org/10.1021/j150623a032	journal	November 1981
Reactivity of Fluorinated Si(100) with F₂ Pullman, D. P.; Tsekouras, A. A.; Li, Y. L. The Journal of Physical Chemistry B, Vol. 105, Issue 2 https://doi.org/10.1021/jp002443v	journal	December 2000
Chemiluminescent titration of F(g) with Cl2(g) and microwave production of atomic fluorine Nordine, Paul C.; Rosner, Daniel E. Journal of the Chemical Society, Faraday Transactions 1: Physical Chemistry in Condensed Phases, Vol. 72, Issue 0 https://doi.org/10.1039/f19767201526	journal	January 1976
Kinetics and mechanism of the gas-phase pyrolysis of hexafluorodisilane in the presence of iodine and some reactions of silicon difluoride Bains, Swroop K.; Noble, Paul N.; Walsh, Robin Journal of the Chemical Society, Faraday Transactions 2, Vol. 82, Issue 5 https://doi.org/10.1039/f29868200837	journal	January 1986
Thermochemical Properties of Si₂F₆ and SiF₄ in Gas and Condensed Phases Lyman, John L.; Noda, Tetsuji Journal of Physical and Chemical Reference Data, Vol. 30, Issue 1 https://doi.org/10.1063/1.1364519	journal	January 2001
Absolute fluorine atom concentrations in fluorocarbon plasmas determined from CF2 loss kinetics Cunge, G.; Chabert, P.; Booth, J. -P. Journal of Applied Physics, Vol. 89, Issue 12 https://doi.org/10.1063/1.1371940	journal	June 2001
Atomistic simulations of spontaneous etching of silicon by fluorine and chlorine Humbird, David; Graves, David B. Journal of Applied Physics, Vol. 96, Issue 1 https://doi.org/10.1063/1.1753657	journal	July 2004
Mass and Auger electron spectroscopy studies of the interactions of atomic and molecular chlorine on a plasma reactor wall Guha, Joydeep; Donnelly, Vincent M.; Pu, Yi-Kang Journal of Applied Physics, Vol. 103, Issue 1 https://doi.org/10.1063/1.2828154	journal	January 2008
The role of chemisorption in plasma etching Winters, Harold F. Journal of Applied Physics, Vol. 49, Issue 10 https://doi.org/10.1063/1.324411	journal	October 1978
Plasma etching of Si and SiO ₂ —The effect of oxygen additions to CF ₄ plasmas Mogab, C. J.; Adams, A. C.; Flamm, D. L. Journal of Applied Physics, Vol. 49, Issue 7 https://doi.org/10.1063/1.325382	journal	July 1978
Ion‐ and electron‐assisted gas‐surface chemistry—An important effect in plasma etching Coburn, J. W.; Winters, Harold F. Journal of Applied Physics, Vol. 50, Issue 5 https://doi.org/10.1063/1.326355	journal	May 1979
In situ Auger electron spectroscopy of Si and SiO2 surfaces plasma etched in CF4-H2 glow discharges Coburn, J. W. Journal of Applied Physics, Vol. 50, Issue 8 https://doi.org/10.1063/1.326660	journal	January 1979
Studies of chemiluminescence accompanying fluorine atom etching of silicon Donnelly, Vincent M.; Flamm, Daniel L. Journal of Applied Physics, Vol. 51, Issue 10 https://doi.org/10.1063/1.327282	journal	January 1980
The reaction of fluorine atoms with silicon Flamm, Daniel L.; Donnelly, Vincent M.; Mucha, John A. Journal of Applied Physics, Vol. 52, Issue 5 https://doi.org/10.1063/1.329098	journal	May 1981
Reaction of atomic fluorine with silicon: The gas phase products Vasile, M. J.; Stevie, F. A. Journal of Applied Physics, Vol. 53, Issue 5 https://doi.org/10.1063/1.331122	journal	May 1982
Chemiluminescent reaction of SiF₂ with fluorine and the etching of silicon by atomic and molecular fluorine Mucha, John A.; Flamm, Daniel L.; Donnelly, Vincent M. Journal of Applied Physics, Vol. 53, Issue 6 https://doi.org/10.1063/1.331204	journal	June 1982
Silicon etching mechanism and anisotropy in CF₄+O₂plasma Lee, Young H.; Chen, Mao‐Min Journal of Applied Physics, Vol. 54, Issue 10 https://doi.org/10.1063/1.331774	journal	October 1983
The reaction probability of XeF₂with silicon Vasile, M. J. Journal of Applied Physics, Vol. 54, Issue 11 https://doi.org/10.1063/1.331856	journal	November 1983
Gaseous products from the reaction of XeF₂with silicon Winters, Harold F.; Houle, F. A. Journal of Applied Physics, Vol. 54, Issue 3 https://doi.org/10.1063/1.332202	journal	March 1983
Anisotropic etching of SiO₂in low‐frequency CF₄/O₂and NF₃/Ar plasmas Donnelly, V. M.; Flamm, D. L.; Dautremont‐Smith, W. C. Journal of Applied Physics, Vol. 55, Issue 1 https://doi.org/10.1063/1.332872	journal	January 1984
Reaction of atomic fluorine with silicon Ninomiya, Ken; Suzuki, Keizo; Nishimatsu, Shigeru Journal of Applied Physics, Vol. 58, Issue 3 https://doi.org/10.1063/1.336133	journal	August 1985
Laser‐induced fluorescence study of silicon etching process: Detection of SiF₂and CF₂radicals Matsumi, Yutaka; Toyoda, Satoru; Hayashi, Toshio Journal of Applied Physics, Vol. 60, Issue 12 https://doi.org/10.1063/1.337489	journal	December 1986
Role of sulfur atoms in microwave plasma etching of silicon Ninomiya, Ken; Suzuki, Keizo; Nishimatsu, Shigeru Journal of Applied Physics, Vol. 62, Issue 4 https://doi.org/10.1063/1.339652	journal	August 1987
SiF₂as a primary desorption product of Si etching by F atoms: Interpretation of laser‐induced fluorescence spectra; rate constant of the gas phase SiF₂+F reaction Vanhaelemeersch, S.; Van Hoeymissen, J.; Vermeylen, D. Journal of Applied Physics, Vol. 70, Issue 7 https://doi.org/10.1063/1.349197	journal	October 1991
Electron impact ionization cross sections of SiF₂ Shul, Randy J.; Hayes, Todd R.; Wetzel, Robert C. The Journal of Chemical Physics, Vol. 89, Issue 7 https://doi.org/10.1063/1.454837	journal	October 1988
Recombination of chlorine atoms on plasma-conditioned stainless steel surfaces in the presence of adsorbed Cl₂ Stafford, Luc; Khare, Rohit; Guha, Joydeep Journal of Physics D: Applied Physics, Vol. 42, Issue 5 https://doi.org/10.1088/0022-3727/42/5/055206	journal	February 2009
Absolute fluorine atom concentrations in RIE and ECR CF₄plasmas measured by actinometry Jenq, Jyh-Shyang; Ding, Ji; Taylor, J. W. Plasma Sources Science and Technology, Vol. 3, Issue 2 https://doi.org/10.1088/0963-0252/3/2/005	journal	May 1994
Laser-induced fluorescence detection of as a primary product of Si and reactive ion etching with gas Cunge, Gilles; Chabert, Pascal; Booth, Jean-Paul Plasma Sources Science and Technology, Vol. 6, Issue 3 https://doi.org/10.1088/0963-0252/6/3/012	journal	August 1997
Absolute radical densities in etching plasmas determined by broad-band UV absorption spectroscopy Booth, Jean-Paul; Cunge, Gilles; Neuilly, François Plasma Sources Science and Technology, Vol. 7, Issue 3 https://doi.org/10.1088/0963-0252/7/3/021	journal	August 1998
Chemical sputtering of fluorinated silicon Tu, Yung-Yi; Chuang, T. J.; Winters, Harold F. Physical Review B, Vol. 23, Issue 2 https://doi.org/10.1103/PhysRevB.23.823	journal	January 1981
Infrared Absorption Spectrum of Sulfur-Doped Silicon Krag, William E.; Zeiger, Herbert J. Physical Review Letters, Vol. 8, Issue 12 https://doi.org/10.1103/PhysRevLett.8.485	journal	June 1962
Determination of electron temperature, atomic fluorine concentration, and gas temperature in inductively coupled fluorocarbon/rare gas plasmas using optical emission spectroscopy Schabel, M. J.; Donnelly, V. M.; Kornblit, A. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 20, Issue 2 https://doi.org/10.1116/1.1454126	journal	March 2002
Etching silicon by SF6 in a continuous and pulsed power helicon reactor Herrick, A.; Perry, A. J.; Boswell, R. W. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 21, Issue 4 https://doi.org/10.1116/1.1575215	journal	July 2003
Feature-scale model of Si etching in SF6 plasma and comparison with experiments Belen, Rodolfo Jun; Gomez, Sergi; Kiehlbauch, Mark Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 23, Issue 1 https://doi.org/10.1116/1.1830495	journal	January 2005
Penetration of fluorine into the silicon lattice during exposure to F atoms, F2, and XeF2: Implications for spontaneous etching reactions Winters, Harold F.; Graves, D. B.; Humbird, D. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 25, Issue 1 https://doi.org/10.1116/1.2400680	journal	January 2007
Plasma etching: Yesterday, today, and tomorrow Donnelly, Vincent M.; Kornblit, Avinoam Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 31, Issue 5 https://doi.org/10.1116/1.4819316	journal	September 2013
Plasma etching—A discussion of mechanisms Coburn, J. W.; Winters, Harold F. Journal of Vacuum Science and Technology, Vol. 16, Issue 2 https://doi.org/10.1116/1.569958	journal	March 1979
Etching rate characterization of SiO ₂ and Si using ion energy flux and atomic fluorine density in a CF ₄ /O ₂ /Ar electron cyclotron resonance plasma Ding, J.; Jenq, J. ‐S.; Kim, G. ‐H. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 11, Issue 4 https://doi.org/10.1116/1.578540	journal	July 1993
Chlorine‐enhanced F‐atom etching of silicon Coburn, J. W. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 12, Issue 3 https://doi.org/10.1116/1.578845	journal	May 1994
Etching reactions for silicon with F atoms: Product distributions and ion enhancement mechanisms Winters, Harold F. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 9, Issue 2 https://doi.org/10.1116/1.585593	journal	March 1991
Comparison of the Fluorine Atom Density Measured by Actinometry and Vacuum Ultraviolet Absorption Spectroscopy Yozo Kawai, Yozo Kawai; Koichi Sasaki, Koichi Sasaki; Kiyoshi Kadota, Kiyoshi Kadota Japanese Journal of Applied Physics, Vol. 36, Issue 9A https://doi.org/10.1143/JJAP.36.L1261	journal	September 1997
Comparison of F 2‐Based Gases for High‐Rate Dry Etching of Si Hays, D. C.; Jung, K. B.; Hahn, Y. B. Journal of The Electrochemical Society, Vol. 146, Issue 10 https://doi.org/10.1149/1.1392556	journal	October 1999
The Loading Effect in Plasma Etching Mogab, C. J. Journal of The Electrochemical Society, Vol. 124, Issue 8 https://doi.org/10.1149/1.2133542	journal	August 1977
RF Sputter-Etching by Fluoro-Chloro-Hydrocarbon Gases Hosokawa, Naokichi; Matsuzaki, Reisaku; Asamaki, Tatsuo Japanese Journal of Applied Physics, Vol. 13, Issue S1 https://doi.org/10.7567/JJAPS.2S1.435	journal	January 1974

Similar Records

Reaction of atomic fluorine with silicon: The gas phase products

Journal Article · 1982 · J. Appl. Phys.; (United States) · OSTI ID:5584430

Vasile, M J; Stevie, F A

Studies of atomic and molecular fluorine reactions on silicon surfaces

Journal Article · 1986 · Appl. Phys. Lett.; (United States) · OSTI ID:6102058

Stinespring, C D; Freedman, A

Invited Review Article: Atom probe tomography

Journal Article · 2007 · Review of Scientific Instruments · OSTI ID:20953383

Kelly, Thomas F; Miller, Michael K

Title: Review Article: Reactions of fluorine atoms with silicon, revisited, again

Citation Formats

References (47)

Similar Records

Related Subjects