skip to main content

DOE PAGESDOE PAGES

Title: Layer dependence of the electronic band alignment of few-layer Mo S 2 on Si O 2 measured using photoemission electron microscopy

Authors:
; ; ; ; ; ; ; ; ; ; ;
Publication Date:
Grant/Contract Number:
AC04-94AL85000; FOA-0000654 CPS25859; NA0003525
Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Name: Physical Review B Journal Volume: 95 Journal Issue: 23; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
Language:
English
OSTI Identifier:
1361446

Berg, Morgann, Keyshar, Kunttal, Bilgin, Ismail, Liu, Fangze, Yamaguchi, Hisato, Vajtai, Robert, Chan, Calvin, Gupta, Gautam, Kar, Swastik, Ajayan, Pulickel, Ohta, Taisuke, and Mohite, Aditya D. Layer dependence of the electronic band alignment of few-layer Mo S 2 on Si O 2 measured using photoemission electron microscopy. United States: N. p., Web. doi:10.1103/PhysRevB.95.235406.
Berg, Morgann, Keyshar, Kunttal, Bilgin, Ismail, Liu, Fangze, Yamaguchi, Hisato, Vajtai, Robert, Chan, Calvin, Gupta, Gautam, Kar, Swastik, Ajayan, Pulickel, Ohta, Taisuke, & Mohite, Aditya D. Layer dependence of the electronic band alignment of few-layer Mo S 2 on Si O 2 measured using photoemission electron microscopy. United States. doi:10.1103/PhysRevB.95.235406.
Berg, Morgann, Keyshar, Kunttal, Bilgin, Ismail, Liu, Fangze, Yamaguchi, Hisato, Vajtai, Robert, Chan, Calvin, Gupta, Gautam, Kar, Swastik, Ajayan, Pulickel, Ohta, Taisuke, and Mohite, Aditya D. 2017. "Layer dependence of the electronic band alignment of few-layer Mo S 2 on Si O 2 measured using photoemission electron microscopy". United States. doi:10.1103/PhysRevB.95.235406.
@article{osti_1361446,
title = {Layer dependence of the electronic band alignment of few-layer Mo S 2 on Si O 2 measured using photoemission electron microscopy},
author = {Berg, Morgann and Keyshar, Kunttal and Bilgin, Ismail and Liu, Fangze and Yamaguchi, Hisato and Vajtai, Robert and Chan, Calvin and Gupta, Gautam and Kar, Swastik and Ajayan, Pulickel and Ohta, Taisuke and Mohite, Aditya D.},
abstractNote = {},
doi = {10.1103/PhysRevB.95.235406},
journal = {Physical Review B},
number = 23,
volume = 95,
place = {United States},
year = {2017},
month = {6}
}

Works referenced in this record:

Emerging Photoluminescence in Monolayer MoS2
journal, April 2010
  • Splendiani, Andrea; Sun, Liang; Zhang, Yuanbo
  • Nano Letters, Vol. 10, Issue 4, p. 1271-1275
  • DOI: 10.1021/nl903868w

High-mobility field-effect transistors based on transition metal dichalcogenides
journal, April 2004
  • Podzorov, V.; Gershenson, M. E.; Kloc, Ch.
  • Applied Physics Letters, Vol. 84, Issue 17, p. 3301-3303
  • DOI: 10.1063/1.1723695

Atomically Thin MoS2 A New Direct-Gap Semiconductor
journal, September 2010

Synthesis of Large-Area MoS2 Atomic Layers with Chemical Vapor Deposition
journal, March 2012
  • Lee, Yi-Hsien; Zhang, Xin-Quan; Zhang, Wenjing
  • Advanced Materials, Vol. 24, Issue 17, p. 2320-2325
  • DOI: 10.1002/adma.201104798

Single-Layer MoS2 Phototransistors
journal, December 2011
  • Yin, Zongyou; Li, Hai; Li, Hong
  • ACS Nano, Vol. 6, Issue 1, p. 74-80
  • DOI: 10.1021/nn2024557

Lateral heterojunctions within monolayer MoSe2–WSe2 semiconductors
journal, August 2014
  • Huang, Chunming; Wu, Sanfeng; Sanchez, Ana M.
  • Nature Materials, Vol. 13, Issue 12, p. 1096-1101
  • DOI: 10.1038/nmat4064

Integrated Circuits Based on Bilayer MoS2 Transistors
journal, January 2012
  • Wang, Han; Yu, Lili; Lee, Yi-Hsien
  • Nano Letters, Vol. 12, Issue 9, p. 4674-4680
  • DOI: 10.1021/nl302015v

Van der Waals heterostructures
journal, July 2013
  • Geim, A. K.; Grigorieva, I. V.
  • Nature, Vol. 499, Issue 7459, p. 419-425
  • DOI: 10.1038/nature12385

Vertical and in-plane heterostructures from WS2/MoS2 monolayers
journal, September 2014
  • Gong, Yongji; Lin, Junhao; Wang, Xingli
  • Nature Materials, Vol. 13, Issue 12, p. 1135-1142
  • DOI: 10.1038/nmat4091

Extraordinary Sunlight Absorption and One Nanometer Thick Photovoltaics Using Two-Dimensional Monolayer Materials
journal, July 2013
  • Bernardi, Marco; Palummo, Maurizia; Grossman, Jeffrey C.
  • Nano Letters, Vol. 13, Issue 8, p. 3664-3670
  • DOI: 10.1021/nl401544y

Two-dimensional atomic crystals
journal, July 2005
  • Novoselov, K. S.; Jiang, D.; Schedin, F.
  • Proceedings of the National Academy of Sciences, Vol. 102, Issue 30, p. 10451-10453
  • DOI: 10.1073/pnas.0502848102

Single-layer MoS2 transistors
journal, January 2011
  • Radisavljevic, B.; Radenovic, A.; Brivio, J.
  • Nature Nanotechnology, Vol. 6, Issue 3, p. 147-150
  • DOI: 10.1038/nnano.2010.279

Nature of Electronic States in Atomically Thin MoS2 Field-Effect Transistors
journal, October 2011
  • Ghatak, Subhamoy; Pal, Atindra Nath; Ghosh, Arindam
  • ACS Nano, Vol. 5, Issue 10, p. 7707-7712
  • DOI: 10.1021/nn202852j