Identifying different stacking sequences in few-layer CVD-grown by low-energy atomic-resolution scanning transmission electron microscopy
Abstract
We present that atomically thin MoS2 grown by chemical vapor deposition (CVD) is a promising candidate for next-generation electronics due to inherent CVD scalability and controllability. However, it is well known that the stacking sequence in few-layer MoS2 can significantly impact electrical and optical properties. Herein we report different intrinsic stacking sequences in CVD-grown few-layer MoS2 obtained by atomic-resolution annular-dark-field imaging in an aberration-corrected scanning transmission electron microscope operated at 50 keV. Trilayer MoS2 displays a new stacking sequence distinct from the commonly observed 2H and 3R phases of MoS2. Finally, density functional theory is used to examine the stability of different stacking sequences, and the findings are consistent with our experimental observations.
- Authors:
-
- Univ. of California, Berkeley, CA (United States). Department of Physics and Kavli Energy NanoSciences Institute; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Science Division
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Electrochemical Technologies Group; Illinois Institute of Technology, Chicago, IL (United States). Department of Mechanical, Materials and Aerospace Engineering
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). National Center for Electron Microscopy, Molecular Foundry
- Northwestern Univ., Evanston, IL (United States). Department of Materials Science and Engineering
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Electrochemical Technologies Group
- Publication Date:
- Research Org.:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1379044
- Alternate Identifier(s):
- OSTI ID: 1235955
- Grant/Contract Number:
- AC02-05CH11231; EDCBEE
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physical Review B
- Additional Journal Information:
- Journal Volume: 93; Journal Issue: 4; Journal ID: ISSN 2469-9950
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Yan, Aiming, Chen, Wei, Ophus, Colin, Ciston, Jim, Lin, Yuyuan, Persson, Kristin, and Zettl, Alex. Identifying different stacking sequences in few-layer CVD-grown MoS2 by low-energy atomic-resolution scanning transmission electron microscopy. United States: N. p., 2016.
Web. doi:10.1103/PhysRevB.93.041420.
Yan, Aiming, Chen, Wei, Ophus, Colin, Ciston, Jim, Lin, Yuyuan, Persson, Kristin, & Zettl, Alex. Identifying different stacking sequences in few-layer CVD-grown MoS2 by low-energy atomic-resolution scanning transmission electron microscopy. United States. doi:https://doi.org/10.1103/PhysRevB.93.041420
Yan, Aiming, Chen, Wei, Ophus, Colin, Ciston, Jim, Lin, Yuyuan, Persson, Kristin, and Zettl, Alex. Mon .
"Identifying different stacking sequences in few-layer CVD-grown MoS2 by low-energy atomic-resolution scanning transmission electron microscopy". United States. doi:https://doi.org/10.1103/PhysRevB.93.041420. https://www.osti.gov/servlets/purl/1379044.
@article{osti_1379044,
title = {Identifying different stacking sequences in few-layer CVD-grown MoS2 by low-energy atomic-resolution scanning transmission electron microscopy},
author = {Yan, Aiming and Chen, Wei and Ophus, Colin and Ciston, Jim and Lin, Yuyuan and Persson, Kristin and Zettl, Alex},
abstractNote = {We present that atomically thin MoS2 grown by chemical vapor deposition (CVD) is a promising candidate for next-generation electronics due to inherent CVD scalability and controllability. However, it is well known that the stacking sequence in few-layer MoS2 can significantly impact electrical and optical properties. Herein we report different intrinsic stacking sequences in CVD-grown few-layer MoS2 obtained by atomic-resolution annular-dark-field imaging in an aberration-corrected scanning transmission electron microscope operated at 50 keV. Trilayer MoS2 displays a new stacking sequence distinct from the commonly observed 2H and 3R phases of MoS2. Finally, density functional theory is used to examine the stability of different stacking sequences, and the findings are consistent with our experimental observations.},
doi = {10.1103/PhysRevB.93.041420},
journal = {Physical Review B},
number = 4,
volume = 93,
place = {United States},
year = {2016},
month = {1}
}
Web of Science
Figures / Tables:

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