skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Identifying different stacking sequences in few-layer CVD-grown Mo S 2 by low-energy atomic-resolution scanning transmission electron microscopy

Abstract

We present that atomically thin MoS2 grown by chemical vapor deposition (CVD) is a promising candidate for next-generation electronics due to inherent CVD scalability and controllability. However, it is well known that the stacking sequence in few-layer MoS2 can significantly impact electrical and optical properties. Herein we report different intrinsic stacking sequences in CVD-grown few-layer MoS2 obtained by atomic-resolution annular-dark-field imaging in an aberration-corrected scanning transmission electron microscope operated at 50 keV. Trilayer MoS2 displays a new stacking sequence distinct from the commonly observed 2H and 3R phases of MoS2. Finally, density functional theory is used to examine the stability of different stacking sequences, and the findings are consistent with our experimental observations.

Authors:
 [1];  [2];  [3];  [3];  [4];  [5];  [1]
+ Show Author Affiliations
  1. Univ. of California, Berkeley, CA (United States). Department of Physics and Kavli Energy NanoSciences Institute; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Science Division
  2. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Electrochemical Technologies Group; Illinois Institute of Technology, Chicago, IL (United States). Department of Mechanical, Materials and Aerospace Engineering
  3. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). National Center for Electron Microscopy, Molecular Foundry
  4. Northwestern Univ., Evanston, IL (United States). Department of Materials Science and Engineering
  5. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Electrochemical Technologies Group
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1379044
Alternate Identifier(s):
OSTI ID: 1235955
Grant/Contract Number:  
AC02-05CH11231; EDCBEE
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 93; Journal Issue: 4; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Yan, Aiming, Chen, Wei, Ophus, Colin, Ciston, Jim, Lin, Yuyuan, Persson, Kristin, and Zettl, Alex. Identifying different stacking sequences in few-layer CVD-grown MoS2 by low-energy atomic-resolution scanning transmission electron microscopy. United States: N. p., 2016. Web. doi:10.1103/PhysRevB.93.041420.
Copy to clipboard
Yan, Aiming, Chen, Wei, Ophus, Colin, Ciston, Jim, Lin, Yuyuan, Persson, Kristin, & Zettl, Alex. Identifying different stacking sequences in few-layer CVD-grown MoS2 by low-energy atomic-resolution scanning transmission electron microscopy. United States. doi:https://doi.org/10.1103/PhysRevB.93.041420
Copy to clipboard
Yan, Aiming, Chen, Wei, Ophus, Colin, Ciston, Jim, Lin, Yuyuan, Persson, Kristin, and Zettl, Alex. Mon . "Identifying different stacking sequences in few-layer CVD-grown MoS2 by low-energy atomic-resolution scanning transmission electron microscopy". United States. doi:https://doi.org/10.1103/PhysRevB.93.041420. https://www.osti.gov/servlets/purl/1379044.
Copy to clipboard
@article{osti_1379044,
title = {Identifying different stacking sequences in few-layer CVD-grown MoS2 by low-energy atomic-resolution scanning transmission electron microscopy},
author = {Yan, Aiming and Chen, Wei and Ophus, Colin and Ciston, Jim and Lin, Yuyuan and Persson, Kristin and Zettl, Alex},
abstractNote = {We present that atomically thin MoS2 grown by chemical vapor deposition (CVD) is a promising candidate for next-generation electronics due to inherent CVD scalability and controllability. However, it is well known that the stacking sequence in few-layer MoS2 can significantly impact electrical and optical properties. Herein we report different intrinsic stacking sequences in CVD-grown few-layer MoS2 obtained by atomic-resolution annular-dark-field imaging in an aberration-corrected scanning transmission electron microscope operated at 50 keV. Trilayer MoS2 displays a new stacking sequence distinct from the commonly observed 2H and 3R phases of MoS2. Finally, density functional theory is used to examine the stability of different stacking sequences, and the findings are consistent with our experimental observations.},
doi = {10.1103/PhysRevB.93.041420},
journal = {Physical Review B},
number = 4,
volume = 93,
place = {United States},
year = {2016},
month = {1}
}
Copy to clipboard
Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI:  https://doi.org/10.1103/PhysRevB.93.041420
Copyright Statement
Other availability
Search WorldCat Search WorldCat to find libraries that may hold this journal
Citation Metrics:
Cited by: 7 works
Citation information provided by
Web of Science

Figures / Tables:

Figure 1 Figure 1: (Color online) Schematics showing the stacking orders for 2H and 3R phases MoS2 in the form of single layer, bi-layer and tri-layer viewed from side and top. Red spheres represent Mo atoms and yellow spheres represent S atoms.
All figures and tables (4 total)
Save / Share:
Export Metadata
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.

Works referenced in this record:

Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide
journal, May 2013

  • van der Zande, Arend M.; Huang, Pinshane Y.; Chenet, Daniel A.
  • Nature Materials, Vol. 12, Issue 6, p. 554-561
  • DOI: 10.1038/nmat3633

Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers
journal, June 2013

  • Najmaei, Sina; Liu, Zheng; Zhou, Wu
  • Nature Materials, Vol. 12, Issue 8, p. 754-759
  • DOI: 10.1038/nmat3673

Flexible and Transparent MoS 2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures
journal, August 2013

  • Lee, Gwan-Hyoung; Yu, Young-Jun; Cui, Xu
  • ACS Nano, Vol. 7, Issue 9
  • DOI: 10.1021/nn402954e

Tailoring the Electronic Structure in Bilayer Molybdenum Disulfide via Interlayer Twist
journal, June 2014

  • van der Zande, Arend M.; Kunstmann, Jens; Chernikov, Alexey
  • Nano Letters, Vol. 14, Issue 7
  • DOI: 10.1021/nl501077m

Two-Dimensional Transition Metal Dichalcogenides under Electron Irradiation: Defect Production and Doping
journal, July 2012

Large and Tunable Photothermoelectric Effect in Single-Layer MoS 2
journal, January 2013

  • Buscema, Michele; Barkelid, Maria; Zwiller, Val
  • Nano Letters, Vol. 13, Issue 2
  • DOI: 10.1021/nl303321g

High mobility ambipolar MoS 2 field-effect transistors: Substrate and dielectric effects
journal, January 2013

  • Bao, Wenzhong; Cai, Xinghan; Kim, Dohun
  • Applied Physics Letters, Vol. 102, Issue 4
  • DOI: 10.1063/1.4789365

Emerging Photoluminescence in Monolayer MoS2
journal, April 2010

  • Splendiani, Andrea; Sun, Liang; Zhang, Yuanbo
  • Nano Letters, Vol. 10, Issue 4, p. 1271-1275
  • DOI: 10.1021/nl903868w

Advanced Computing in Electron Microscopy
book, January 2010

Direct Growth of Single- and Few-Layer MoS 2 on h-BN with Preferred Relative Rotation Angles
journal, September 2015

Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
journal, October 1996

From ultrasoft pseudopotentials to the projector augmented-wave method
journal, January 1999

A direct transfer of layer-area graphene
journal, March 2010

  • Regan, William; Alem, Nasim; Alemán, Benjamín
  • Applied Physics Letters, Vol. 96, Issue 11
  • DOI: 10.1063/1.3337091

Detailed photocurrent spectroscopy of the semiconducting group VIB transition metal dichalcogenides
journal, February 1982

  • Kam, K. K.; Parkinson, B. A.
  • The Journal of Physical Chemistry, Vol. 86, Issue 4
  • DOI: 10.1021/j100393a010

Valley-dependent spin polarization in bulk MoS2 with broken inversion symmetry
journal, July 2014

Atomically Thin MoS2 A New Direct-Gap Semiconductor
journal, September 2010

Semiempirical GGA-type density functional constructed with a long-range dispersion correction
journal, January 2006

  • Grimme, Stefan
  • Journal of Computational Chemistry, Vol. 27, Issue 15, p. 1787-1799
  • DOI: 10.1002/jcc.20495

Single-Layer MoS2 Phototransistors
journal, December 2011

  • Yin, Zongyou; Li, Hai; Li, Hong
  • ACS Nano, Vol. 6, Issue 1, p. 74-80
  • DOI: 10.1021/nn2024557

Ultrasensitive photodetectors based on monolayer MoS2
journal, June 2013

  • Lopez-Sanchez, Oriol; Lembke, Dominik; Kayci, Metin
  • Nature Nanotechnology, Vol. 8, Issue 7
  • DOI: 10.1038/nnano.2013.100

Evolution of interlayer coupling in twisted molybdenum disulfide bilayers
journal, September 2014

  • Liu, Kaihui; Zhang, Liming; Cao, Ting
  • Nature Communications, Vol. 5, Issue 1
  • DOI: 10.1038/ncomms5966

Stacking effects on the electronic and optical properties of bilayer transition metal dichalcogenides MoS 2 , MoSe 2 , WS 2 , and WSe 2
journal, February 2014

Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices
journal, March 2013

  • Sup Choi, Min; Lee, Gwan-Hyoung; Yu, Young-Jun
  • Nature Communications, Vol. 4, Issue 1
  • DOI: 10.1038/ncomms2652

Stacking in Bulk and Bilayer Hexagonal Boron Nitride
journal, July 2013

Sensing Behavior of Atomically Thin-Layered MoS 2 Transistors
journal, May 2013

  • Late, Dattatray J.; Huang, Yi-Kai; Liu, Bin
  • ACS Nano, Vol. 7, Issue 6
  • DOI: 10.1021/nn400026u

Single-layer MoS2 transistors
journal, January 2011

  • Radisavljevic, B.; Radenovic, A.; Brivio, J.
  • Nature Nanotechnology, Vol. 6, Issue 3, p. 147-150
  • DOI: 10.1038/nnano.2010.279

MoS 2 Nanosheet Phototransistors with Thickness-Modulated Optical Energy Gap
journal, June 2012

  • Lee, Hee Sung; Min, Sung-Wook; Chang, Youn-Gyung
  • Nano Letters, Vol. 12, Issue 7
  • DOI: 10.1021/nl301485q

Self-Consistent Equations Including Exchange and Correlation Effects
journal, November 1965

    [ × clear filter / sort ]

    Works referencing / citing this record:

    Atomic Vacancy Control and Elemental Substitution in a Monolayer Molybdenum Disulfide for High Performance Optoelectronic Device Arrays
    journal, January 2020

    • Chee, Sang‐Soo; Lee, Won‐June; Jo, Yong‐Ryun
    • Advanced Functional Materials, Vol. 30, Issue 11
    • DOI: 10.1002/adfm.201908147

    Differentiating Polymorphs in Molybdenum Disulfide via Electron Microscopy
    journal, August 2018

    Healing of Planar Defects in 2D Materials via Grain Boundary Sliding
    journal, February 2019

    Stacking-controllable interlayer coupling and symmetric configuration of multilayered MoS2
    journal, February 2018

    • Shinde, Sachin M.; Dhakal, Krishna P.; Chen, Xiang
    • NPG Asia Materials, Vol. 10, Issue 2
    • DOI: 10.1038/am.2017.226

    Stacking change in MoS2 bilayers induced by interstitial Mo impurities
    journal, February 2018

    Twist Angle mapping in layered WS2 by Polarization-Resolved Second Harmonic Generation
    journal, October 2019

    • Psilodimitrakopoulos, Sotiris; Mouchliadis, Leonidas; Paradisanos, Ioannis
    • Scientific Reports, Vol. 9, Issue 1
    • DOI: 10.1038/s41598-019-50534-0

    Atomic structure of defects and dopants in 2D layered transition metal dichalcogenides
    journal, January 2018

    • Wang, Shanshan; Robertson, Alex; Warner, Jamie H.
    • Chemical Society Reviews, Vol. 47, Issue 17
    • DOI: 10.1039/c8cs00236c
      [ × clear filter / sort ]

      Figures / Tables found in this record:

      Figure 1 (p. 8)figure
      Figure 2 (p. 9)figure
      Figure 3 (p. 11)figure
      Figure 4 (p. 14)figure
        [ × clear filter / sort ]
        Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.

        Similar Records in DOE PAGES and OSTI.GOV collections: