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Title: Identifying different stacking sequences in few-layer CVD-grown Mo S 2 by low-energy atomic-resolution scanning transmission electron microscopy

Abstract

We present that atomically thin MoS 2 grown by chemical vapor deposition (CVD) is a promising candidate for next-generation electronics due to inherent CVD scalability and controllability. However, it is well known that the stacking sequence in few-layer MoS 2 can significantly impact electrical and optical properties. Herein we report different intrinsic stacking sequences in CVD-grown few-layer MoS 2 obtained by atomic-resolution annular-dark-field imaging in an aberration-corrected scanning transmission electron microscope operated at 50 keV. Trilayer MoS 2 displays a new stacking sequence distinct from the commonly observed 2H and 3R phases of MoS 2. Finally, density functional theory is used to examine the stability of different stacking sequences, and the findings are consistent with our experimental observations.

Authors:
 [1];  [2];  [3];  [3];  [4];  [5];  [1]
+ Show Author Affiliations
  1. Univ. of California, Berkeley, CA (United States). Department of Physics and Kavli Energy NanoSciences Institute; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Science Division
  2. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Electrochemical Technologies Group; Illinois Institute of Technology, Chicago, IL (United States). Department of Mechanical, Materials and Aerospace Engineering
  3. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). National Center for Electron Microscopy, Molecular Foundry
  4. Northwestern Univ., Evanston, IL (United States). Department of Materials Science and Engineering
  5. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Electrochemical Technologies Group
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1379044
Alternate Identifier(s):
OSTI ID: 1235955
Grant/Contract Number:  
AC02-05CH11231; EDCBEE
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 93; Journal Issue: 4; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Yan, Aiming, Chen, Wei, Ophus, Colin, Ciston, Jim, Lin, Yuyuan, Persson, Kristin, and Zettl, Alex. Identifying different stacking sequences in few-layer CVD-grown MoS2 by low-energy atomic-resolution scanning transmission electron microscopy. United States: N. p., 2016. Web. doi:10.1103/PhysRevB.93.041420.
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Yan, Aiming, Chen, Wei, Ophus, Colin, Ciston, Jim, Lin, Yuyuan, Persson, Kristin, & Zettl, Alex. Identifying different stacking sequences in few-layer CVD-grown MoS2 by low-energy atomic-resolution scanning transmission electron microscopy. United States. doi:10.1103/PhysRevB.93.041420.
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Yan, Aiming, Chen, Wei, Ophus, Colin, Ciston, Jim, Lin, Yuyuan, Persson, Kristin, and Zettl, Alex. Mon . "Identifying different stacking sequences in few-layer CVD-grown MoS2 by low-energy atomic-resolution scanning transmission electron microscopy". United States. doi:10.1103/PhysRevB.93.041420. https://www.osti.gov/servlets/purl/1379044.
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@article{osti_1379044,
title = {Identifying different stacking sequences in few-layer CVD-grown MoS2 by low-energy atomic-resolution scanning transmission electron microscopy},
author = {Yan, Aiming and Chen, Wei and Ophus, Colin and Ciston, Jim and Lin, Yuyuan and Persson, Kristin and Zettl, Alex},
abstractNote = {We present that atomically thin MoS2 grown by chemical vapor deposition (CVD) is a promising candidate for next-generation electronics due to inherent CVD scalability and controllability. However, it is well known that the stacking sequence in few-layer MoS2 can significantly impact electrical and optical properties. Herein we report different intrinsic stacking sequences in CVD-grown few-layer MoS2 obtained by atomic-resolution annular-dark-field imaging in an aberration-corrected scanning transmission electron microscope operated at 50 keV. Trilayer MoS2 displays a new stacking sequence distinct from the commonly observed 2H and 3R phases of MoS2. Finally, density functional theory is used to examine the stability of different stacking sequences, and the findings are consistent with our experimental observations.},
doi = {10.1103/PhysRevB.93.041420},
journal = {Physical Review B},
number = 4,
volume = 93,
place = {United States},
year = {2016},
month = {1}
}
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Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI:  10.1103/PhysRevB.93.041420
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Cited by: 7 works
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Figures / Tables:

Figure 1 Figure 1: (Color online) Schematics showing the stacking orders for 2H and 3R phases MoS2 in the form of single layer, bi-layer and tri-layer viewed from side and top. Red spheres represent Mo atoms and yellow spheres represent S atoms.
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