Electrical-current-induced magnetic hysteresis in self-assembled vertically aligned La2/3Sr1/3MnO3:ZnO nanopillar composites

Pan, W.; Lu, P.; Ihlefeld, J. F.; Lee, S. R.; Choi, E. S.; Jiang, Y.; Jia, Q. X.

doi:10.1103/PhysRevMaterials.2.021401

Title: Electrical-current-induced magnetic hysteresis in self-assembled vertically aligned $L a_{2 / 3} S r_{1 / 3} Mn O_{3} : ZnO$ nanopillar composites

Journal Article · 22 February 2018 · Physical Review Materials

DOI: https://doi.org/10.1103/PhysRevMaterials.2.021401 · OSTI ID:1426813

Pan, W. ^[1]; Lu, P. ^[1]; Ihlefeld, J. F. ^[2]; Lee, S. R. ^[1]; Choi, E. S. ^[3]; Jiang, Y. ^[3]; Jia, Q. X. ^[4]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Univ. of Virginia, Charlottesville, VA (United States). Department of Materials Science and Engineering and Department of Electrical and Computer Engineering
Florida State Univ., Tallahassee, FL (United States). National High Magnetic Field Lab. (MagLab)
Univ. at Buffalo, NY (United States). Department of Materials Design and Innovation; Konkuk University, Seoul (South Korea). Dept. of Physics

Magnetoresistive random-access memory (MRAM) is poised to become a next-generation information storage device. Yet, many materials challenges remain unsolved before it can become a widely used memory storage solution. Among them, an urgent need is to identify a material system that is suitable for downscaling and is compatible with low-power logic applications. Self-assembled, vertically aligned La_2/3Sr_1/3MnO₃: ZnO nanocomposites, in which La_2/3Sr_1/3MnO₃ (LSMO) matrix and ZnO nanopillars form an intertwined structure with coincident-site-matched growth occurring between the LSMO and ZnO vertical interfaces, may offer new MRAM applications by combining their superior electric, magnetic ( B ), and optical properties. Here, in this Rapid Communication, we show the results of electrical current induced magnetic hysteresis in magnetoresistance measurements in these nanopillar composites. We observe that when the current level is low, for example, 1 µA, the magnetoresistance displays a linear, negative, nonhysteretic B field dependence. Surprisingly, when a large current is used, I > 10 µA, a hysteretic behavior is observed when the B field is swept in the up and down directions. This hysteresis weakens as the sample temperature is increased. Finally, a possible spin-valve mechanism related to this electrical current induced magnetic hysteresis is proposed and discussed.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC)

Grant/Contract Number:: AC04-94AL85000; NA0003525; AC52-06NA25396

OSTI ID:: 1426813

Alternate ID(s):: OSTI ID: 1422257

Report Number(s):: SAND-2018-1699J; PRMHAR; 660705; TRN: US1802576

Journal Information:: Physical Review Materials, Vol. 2, Issue 2; ISSN 2475-9953

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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