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Title: Electrical-current-induced magnetic hysteresis in self-assembled vertically aligned L a 2 / 3 S r 1 / 3 Mn O 3 : ZnO nanopillar composites

Magnetoresistive random-access memory (MRAM) is poised to become a next-generation information storage device. Yet, many materials challenges remain unsolved before it can become a widely used memory storage solution. Among them, an urgent need is to identify a material system that is suitable for downscaling and is compatible with low-power logic applications. Self-assembled, vertically aligned La 2/3Sr 1/3MnO 3: ZnO nanocomposites, in which La 2/3Sr 1/3MnO 3 (LSMO) matrix and ZnO nanopillars form an intertwined structure with coincident-site-matched growth occurring between the LSMO and ZnO vertical interfaces, may offer new MRAM applications by combining their superior electric, magnetic ( B ), and optical properties. Here, in this Rapid Communication, we show the results of electrical current induced magnetic hysteresis in magnetoresistance measurements in these nanopillar composites. We observe that when the current level is low, for example, 1 µA, the magnetoresistance displays a linear, negative, nonhysteretic B field dependence. Surprisingly, when a large current is used, I > 10 µA, a hysteretic behavior is observed when the B field is swept in the up and down directions. This hysteresis weakens as the sample temperature is increased. Finally, a possible spin-valve mechanism related to this electrical current induced magnetic hysteresis ismore » proposed and discussed.« less
Authors:
 [1] ;  [1] ;  [2] ;  [1] ;  [3] ;  [3] ;  [4]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Univ. of Virginia, Charlottesville, VA (United States). Department of Materials Science and Engineering and Department of Electrical and Computer Engineering
  3. Florida State Univ., Tallahassee, FL (United States). National High Magnetic Field Lab. (MagLab)
  4. Univ. at Buffalo, NY (United States). Department of Materials Design and Innovation; Konkuk University, Seoul (South Korea). Dept. of Physics
Publication Date:
Report Number(s):
SAND-2018-1699J
Journal ID: ISSN 2475-9953; PRMHAR; 660705
Grant/Contract Number:
AC04-94AL85000; NA0003525; AC52-06NA25396
Type:
Accepted Manuscript
Journal Name:
Physical Review Materials
Additional Journal Information:
Journal Volume: 2; Journal Issue: 2; Journal ID: ISSN 2475-9953
Publisher:
American Physical Society (APS)
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
OSTI Identifier:
1426813
Alternate Identifier(s):
OSTI ID: 1422257

Pan, W., Lu, P., Ihlefeld, J. F., Lee, S. R., Choi, E. S., Jiang, Y., and Jia, Q. X.. Electrical-current-induced magnetic hysteresis in self-assembled vertically aligned La2/3Sr1/3MnO3:ZnO nanopillar composites. United States: N. p., Web. doi:10.1103/PhysRevMaterials.2.021401.
Pan, W., Lu, P., Ihlefeld, J. F., Lee, S. R., Choi, E. S., Jiang, Y., & Jia, Q. X.. Electrical-current-induced magnetic hysteresis in self-assembled vertically aligned La2/3Sr1/3MnO3:ZnO nanopillar composites. United States. doi:10.1103/PhysRevMaterials.2.021401.
Pan, W., Lu, P., Ihlefeld, J. F., Lee, S. R., Choi, E. S., Jiang, Y., and Jia, Q. X.. 2018. "Electrical-current-induced magnetic hysteresis in self-assembled vertically aligned La2/3Sr1/3MnO3:ZnO nanopillar composites". United States. doi:10.1103/PhysRevMaterials.2.021401.
@article{osti_1426813,
title = {Electrical-current-induced magnetic hysteresis in self-assembled vertically aligned La2/3Sr1/3MnO3:ZnO nanopillar composites},
author = {Pan, W. and Lu, P. and Ihlefeld, J. F. and Lee, S. R. and Choi, E. S. and Jiang, Y. and Jia, Q. X.},
abstractNote = {Magnetoresistive random-access memory (MRAM) is poised to become a next-generation information storage device. Yet, many materials challenges remain unsolved before it can become a widely used memory storage solution. Among them, an urgent need is to identify a material system that is suitable for downscaling and is compatible with low-power logic applications. Self-assembled, vertically aligned La2/3Sr1/3MnO3: ZnO nanocomposites, in which La2/3Sr1/3MnO3 (LSMO) matrix and ZnO nanopillars form an intertwined structure with coincident-site-matched growth occurring between the LSMO and ZnO vertical interfaces, may offer new MRAM applications by combining their superior electric, magnetic ( B ), and optical properties. Here, in this Rapid Communication, we show the results of electrical current induced magnetic hysteresis in magnetoresistance measurements in these nanopillar composites. We observe that when the current level is low, for example, 1 µA, the magnetoresistance displays a linear, negative, nonhysteretic B field dependence. Surprisingly, when a large current is used, I > 10 µA, a hysteretic behavior is observed when the B field is swept in the up and down directions. This hysteresis weakens as the sample temperature is increased. Finally, a possible spin-valve mechanism related to this electrical current induced magnetic hysteresis is proposed and discussed.},
doi = {10.1103/PhysRevMaterials.2.021401},
journal = {Physical Review Materials},
number = 2,
volume = 2,
place = {United States},
year = {2018},
month = {2}
}

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