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Title: Valley-polarized exciton dynamics in a 2D semiconductor heterostructure

Authors:
; ; ; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1355832
Grant/Contract Number:  
SC0008145; SC0012509
Resource Type:
Published Article
Journal Name:
Science
Additional Journal Information:
Journal Name: Science Journal Volume: 351 Journal Issue: 6274; Journal ID: ISSN 0036-8075
Publisher:
American Association for the Advancement of Science (AAAS)
Country of Publication:
United States
Language:
English

Citation Formats

Rivera, P., Seyler, K. L., Yu, H., Schaibley, J. R., Yan, J., Mandrus, D. G., Yao, W., and Xu, X. Valley-polarized exciton dynamics in a 2D semiconductor heterostructure. United States: N. p., 2016. Web. doi:10.1126/science.aac7820.
Rivera, P., Seyler, K. L., Yu, H., Schaibley, J. R., Yan, J., Mandrus, D. G., Yao, W., & Xu, X. Valley-polarized exciton dynamics in a 2D semiconductor heterostructure. United States. doi:10.1126/science.aac7820.
Rivera, P., Seyler, K. L., Yu, H., Schaibley, J. R., Yan, J., Mandrus, D. G., Yao, W., and Xu, X. Thu . "Valley-polarized exciton dynamics in a 2D semiconductor heterostructure". United States. doi:10.1126/science.aac7820.
@article{osti_1355832,
title = {Valley-polarized exciton dynamics in a 2D semiconductor heterostructure},
author = {Rivera, P. and Seyler, K. L. and Yu, H. and Schaibley, J. R. and Yan, J. and Mandrus, D. G. and Yao, W. and Xu, X.},
abstractNote = {},
doi = {10.1126/science.aac7820},
journal = {Science},
number = 6274,
volume = 351,
place = {United States},
year = {2016},
month = {2}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1126/science.aac7820

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Cited by: 227 works
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