Valley-polarized exciton dynamics in a 2D semiconductor heterostructure
- Authors:
- Publication Date:
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1355832
- Grant/Contract Number:
- SC0008145; SC0012509
- Resource Type:
- Published Article
- Journal Name:
- Science
- Additional Journal Information:
- Journal Name: Science Journal Volume: 351 Journal Issue: 6274; Journal ID: ISSN 0036-8075
- Publisher:
- American Association for the Advancement of Science (AAAS)
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Rivera, P., Seyler, K. L., Yu, H., Schaibley, J. R., Yan, J., Mandrus, D. G., Yao, W., and Xu, X. Valley-polarized exciton dynamics in a 2D semiconductor heterostructure. United States: N. p., 2016.
Web. doi:10.1126/science.aac7820.
Rivera, P., Seyler, K. L., Yu, H., Schaibley, J. R., Yan, J., Mandrus, D. G., Yao, W., & Xu, X. Valley-polarized exciton dynamics in a 2D semiconductor heterostructure. United States. https://doi.org/10.1126/science.aac7820
Rivera, P., Seyler, K. L., Yu, H., Schaibley, J. R., Yan, J., Mandrus, D. G., Yao, W., and Xu, X. Thu .
"Valley-polarized exciton dynamics in a 2D semiconductor heterostructure". United States. https://doi.org/10.1126/science.aac7820.
@article{osti_1355832,
title = {Valley-polarized exciton dynamics in a 2D semiconductor heterostructure},
author = {Rivera, P. and Seyler, K. L. and Yu, H. and Schaibley, J. R. and Yan, J. and Mandrus, D. G. and Yao, W. and Xu, X.},
abstractNote = {},
doi = {10.1126/science.aac7820},
journal = {Science},
number = 6274,
volume = 351,
place = {United States},
year = {Thu Feb 11 00:00:00 EST 2016},
month = {Thu Feb 11 00:00:00 EST 2016}
}
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https://doi.org/10.1126/science.aac7820
https://doi.org/10.1126/science.aac7820
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