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Title: Directional interlayer spin-valley transfer in two-dimensional heterostructures

Van der Waals heterostructures formed by two different monolayer semiconductors have emerged as a promising platform for new optoelectronic and spin/valleytronic applications. In addition to its atomically thin nature, a two-dimensional semiconductor heterostructure is distinct from its three-dimensional counterparts due to the unique coupled spin-valley physics of its constituent monolayers. In this paper, we report the direct observation that an optically generated spin-valley polarization in one monolayer can be transferred between layers of a two-dimensional MoSe 2–WSe 2 heterostructure. Using non-degenerate optical circular dichroism spectroscopy, we show that charge transfer between two monolayers conserves spin-valley polarization and is only weakly dependent on the twist angle between layers. Finally, our work points to a new spin-valley pumping scheme in nanoscale devices, provides a fundamental understanding of spin-valley transfer across the two-dimensional interface, and shows the potential use of two-dimensional semiconductors as a spin-valley generator in two-dimensional spin/valleytronic devices for storing and processing information.
Authors:
 [1] ; ORCiD logo [1] ;  [2] ;  [1] ;  [3] ;  [4] ;  [5] ; ORCiD logo [5] ; ORCiD logo [2] ; ORCiD logo [6]
  1. Univ. of Washington, Seattle, WA (United States). Dept. of Physics
  2. Univ. of Hong Kong (China). Dept. of Physics. Center of Theoretical and Computational Physics
  3. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division; Univ. of Tennessee, Knoxville, TN (United States). Dept. of Materials Science and Engineering
  4. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division; Univ. of Tennessee, Knoxville, TN (United States). Dept. of Materials Science and Engineering. Dept. of Physics and Astronomy
  5. National Inst. for Materials Science (NIMS), Tsukuba (Japan). Advanced Materials Lab.
  6. Univ. of Washington, Seattle, WA (United States). Dept. of Physics. Dept. of Materials Science and Engineering
Publication Date:
Grant/Contract Number:
SC0008145; SC0012509; HKU17305914P
Type:
Accepted Manuscript
Journal Name:
Nature Communications
Additional Journal Information:
Journal Volume: 7; Journal ID: ISSN 2041-1723
Publisher:
Nature Publishing Group
Research Org:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Univ. of Washington, Seattle, WA (United States); Univ. of Hong Kong (China)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); State of Washington (United States). Clean Energy Inst.; Croucher Foundation (China); RGC of Hong Kong (China)
Contributing Orgs:
Univ. of Tennessee, Knoxville, TN (United States); National Inst. for Materials Science (NIMS), Tsukuba (Japan)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 36 MATERIALS SCIENCE; spintronics; two-dimensional materials
OSTI Identifier:
1338562