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Title: Phonon-assisted oscillatory exciton dynamics in monolayer MoSe 2

Abstract

In monolayer semiconductor transition metal dichalcogenides, the exciton–phonon interaction strongly affects the photocarrier dynamics. Here, we report on an unusual oscillatory enhancement of the neutral exciton photoluminescence with the excitation laser frequency in monolayer MoSe 2. The frequency of oscillation matches that of the M-point longitudinal acoustic phonon, LA(M), suggesting the significance of zone-edge acoustic phonons and hence the deformation potential in exciton-phonon coupling in MoSe 2. Moreover, oscillatory behavior is observed in the steady-state emission linewidth and in time-resolved PLE data, which reveals variation with excitation energy in the exciton lifetime. These results clearly expose the key role played by phonons in the exciton formation and relaxation dynamics of two-dimensional van der Waals semiconductors.

Authors:
 [1];  [2];  [1];  [3];  [4];  [5];  [6];  [2];  [7]
  1. Univ. of Washington, Seattle, WA (United States). Dept. of Physics
  2. Univ. of Hong Kong (China). Dept. of Physics. Center of Theoretical and Computational Physics
  3. Univ. of Arizona, Tucson, AZ (United States). Dept. of Physics
  4. Univ. of Tennessee, Knoxville, TN (United States). Dept. of Materials Science and Engineering
  5. Univ. of Tennessee, Knoxville, TN (United States). Dept. of Materials Science and Engineering; Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division
  6. Univ. of Michigan, Ann Arbor, MI (United States). Center for Photonics and Multiscale Nanomaterials. Dept. of Physics
  7. Univ. of Washington, Seattle, WA (United States). Dept. of Physics. Dept. of Materials Science and Engineering
Publication Date:
Research Org.:
Univ. of Washington, Seattle, WA (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Univ. of Hong Kong (China)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); National Science Foundation (NSF); Croucher Foundation, Hong Kong (China); Research Grants Council (RGC), Hong Kong (China); University Grants Committee (UGC), Hong Kong (China)
OSTI Identifier:
1432153
Grant/Contract Number:  
[AC05-00OR22725; SC0008145; SC0012509; DMR-1120923; HKU17305914P; AoE/P-04/08]
Resource Type:
Accepted Manuscript
Journal Name:
npj 2D Materials and Applications
Additional Journal Information:
[ Journal Volume: 1]; Journal ID: ISSN 2397-7132
Publisher:
Springer Nature
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; two-dimensional materials

Citation Formats

Chow, Colin M., Yu, Hongyi, Jones, Aaron M., Schaibley, John R., Koehler, Michael, Mandrus, David G., Merlin, R., Yao, Wang, and Xu, Xiaodong. Phonon-assisted oscillatory exciton dynamics in monolayer MoSe2. United States: N. p., 2017. Web. doi:10.1038/s41699-017-0035-1.
Chow, Colin M., Yu, Hongyi, Jones, Aaron M., Schaibley, John R., Koehler, Michael, Mandrus, David G., Merlin, R., Yao, Wang, & Xu, Xiaodong. Phonon-assisted oscillatory exciton dynamics in monolayer MoSe2. United States. doi:10.1038/s41699-017-0035-1.
Chow, Colin M., Yu, Hongyi, Jones, Aaron M., Schaibley, John R., Koehler, Michael, Mandrus, David G., Merlin, R., Yao, Wang, and Xu, Xiaodong. Fri . "Phonon-assisted oscillatory exciton dynamics in monolayer MoSe2". United States. doi:10.1038/s41699-017-0035-1. https://www.osti.gov/servlets/purl/1432153.
@article{osti_1432153,
title = {Phonon-assisted oscillatory exciton dynamics in monolayer MoSe2},
author = {Chow, Colin M. and Yu, Hongyi and Jones, Aaron M. and Schaibley, John R. and Koehler, Michael and Mandrus, David G. and Merlin, R. and Yao, Wang and Xu, Xiaodong},
abstractNote = {In monolayer semiconductor transition metal dichalcogenides, the exciton–phonon interaction strongly affects the photocarrier dynamics. Here, we report on an unusual oscillatory enhancement of the neutral exciton photoluminescence with the excitation laser frequency in monolayer MoSe2. The frequency of oscillation matches that of the M-point longitudinal acoustic phonon, LA(M), suggesting the significance of zone-edge acoustic phonons and hence the deformation potential in exciton-phonon coupling in MoSe2. Moreover, oscillatory behavior is observed in the steady-state emission linewidth and in time-resolved PLE data, which reveals variation with excitation energy in the exciton lifetime. These results clearly expose the key role played by phonons in the exciton formation and relaxation dynamics of two-dimensional van der Waals semiconductors.},
doi = {10.1038/s41699-017-0035-1},
journal = {npj 2D Materials and Applications},
number = ,
volume = [1],
place = {United States},
year = {2017},
month = {10}
}

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