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Title: Quantum-Size-Controlled Photoelectrochemical Fabrication of Epitaxial InGaN Quantum Dots

Abstract

In this paper, we demonstrate a new route to the precision fabrication of epitaxial semiconductor nanostructures in the sub-10 nm size regime: quantum-size-controlled photoelectrochemical (QSC-PEC) etching. We show that quantum dots (QDs) can be QSC-PEC-etched from epitaxial InGaN thin films using narrowband laser photoexcitation, and that the QD sizes (and hence bandgaps and photoluminescence wavelengths) are determined by the photoexcitation wavelength. Finally, low-temperature photoluminescence from ensembles of such QDs have peak wavelengths that can be tunably blue shifted by 35 nm (from 440 to 405 nm) and have line widths that narrow by 3 times (from 19 to 6 nm).

Authors:
 [1];  [1];  [1];  [1];  [1];  [1];  [2];  [2];  [1];  [1];  [1]
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  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Solid-State Lighting Science Energy Frontier Research Center
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Solid-State Lighting Science Energy Frontier Research Center. Center for Integrated Nanotechnologies
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Laboratory Directed Research and Development (LDRD) Program
OSTI Identifier:
1347347
Report Number(s):
SAND-2014-1138J
Journal ID: ISSN 1530-6984; 537321
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Accepted Manuscript
Journal Name:
Nano Letters
Additional Journal Information:
Journal Volume: 14; Journal Issue: 10; Journal ID: ISSN 1530-6984
Publisher:
American Chemical Society
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; InGaN; photoelectrochemical etching; quantum dots; quantum-size effects

Citation Formats

Xiao, Xiaoyin, Fischer, Arthur J., Wang, George T., Lu, Ping, Koleske, Daniel D., Coltrin, Michael E., Wright, Jeremy B., Liu, Sheng, Brener, Igal, Subramania, Ganapathi S., and Tsao, Jeffrey Y. Quantum-Size-Controlled Photoelectrochemical Fabrication of Epitaxial InGaN Quantum Dots. United States: N. p., 2014. Web. doi:10.1021/nl502151k.
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Xiao, Xiaoyin, Fischer, Arthur J., Wang, George T., Lu, Ping, Koleske, Daniel D., Coltrin, Michael E., Wright, Jeremy B., Liu, Sheng, Brener, Igal, Subramania, Ganapathi S., & Tsao, Jeffrey Y. Quantum-Size-Controlled Photoelectrochemical Fabrication of Epitaxial InGaN Quantum Dots. United States. https://doi.org/10.1021/nl502151k
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Xiao, Xiaoyin, Fischer, Arthur J., Wang, George T., Lu, Ping, Koleske, Daniel D., Coltrin, Michael E., Wright, Jeremy B., Liu, Sheng, Brener, Igal, Subramania, Ganapathi S., and Tsao, Jeffrey Y. Fri . "Quantum-Size-Controlled Photoelectrochemical Fabrication of Epitaxial InGaN Quantum Dots". United States. https://doi.org/10.1021/nl502151k. https://www.osti.gov/servlets/purl/1347347.
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@article{osti_1347347,
title = {Quantum-Size-Controlled Photoelectrochemical Fabrication of Epitaxial InGaN Quantum Dots},
author = {Xiao, Xiaoyin and Fischer, Arthur J. and Wang, George T. and Lu, Ping and Koleske, Daniel D. and Coltrin, Michael E. and Wright, Jeremy B. and Liu, Sheng and Brener, Igal and Subramania, Ganapathi S. and Tsao, Jeffrey Y.},
abstractNote = {In this paper, we demonstrate a new route to the precision fabrication of epitaxial semiconductor nanostructures in the sub-10 nm size regime: quantum-size-controlled photoelectrochemical (QSC-PEC) etching. We show that quantum dots (QDs) can be QSC-PEC-etched from epitaxial InGaN thin films using narrowband laser photoexcitation, and that the QD sizes (and hence bandgaps and photoluminescence wavelengths) are determined by the photoexcitation wavelength. Finally, low-temperature photoluminescence from ensembles of such QDs have peak wavelengths that can be tunably blue shifted by 35 nm (from 440 to 405 nm) and have line widths that narrow by 3 times (from 19 to 6 nm).},
doi = {10.1021/nl502151k},
journal = {Nano Letters},
number = 10,
volume = 14,
place = {United States},
year = {Fri Aug 29 00:00:00 EDT 2014},
month = {Fri Aug 29 00:00:00 EDT 2014}
}
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    Works referencing / citing this record:

    III‐Nitride Micro‐LEDs for Efficient Emissive Displays
    journal, August 2019

    Scalable high-precision tuning of photonic resonators by resonant cavity-enhanced photoelectrochemical etching
    journal, January 2017

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    • Nature Communications, Vol. 8, Issue 1
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    Room temperature luminescence of passivated InGaN quantum dots formed by quantum-sized-controlled photoelectrochemical etching
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    • Wei, Xiongliang; Al Muyeed, Syed Ahmed; Peart, Matthew R.
    • Applied Physics Letters, Vol. 113, Issue 12
    • DOI: 10.1063/1.5046857

    Single photon emission from top-down etched III-nitride quantum dots
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    Formation of spherical-shaped GaN and InN quantum dots on curved SiN/Si surface
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    III-nitride photonic crystal emitters by selective photoelectrochemical etching of heterogeneous quantum well structures
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    • Anderson, P. Duke; Fischer, Arthur J.; Koleske, Daniel D.
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    Author Correction: Scalable high-precision tuning of photonic resonators by resonant cavity-enhanced photoelectrochemical etching
    journal, August 2018

    • Gil-Santos, Eduardo; Baker, Christopher; Lemaître, Aristide
    • Nature Communications, Vol. 9, Issue 1
    • DOI: 10.1038/s41467-018-05788-z
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