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Title: Quantum-Size-Controlled Photoelectrochemical Fabrication of Epitaxial InGaN Quantum Dots

In this paper, we demonstrate a new route to the precision fabrication of epitaxial semiconductor nanostructures in the sub-10 nm size regime: quantum-size-controlled photoelectrochemical (QSC-PEC) etching. We show that quantum dots (QDs) can be QSC-PEC-etched from epitaxial InGaN thin films using narrowband laser photoexcitation, and that the QD sizes (and hence bandgaps and photoluminescence wavelengths) are determined by the photoexcitation wavelength. Finally, low-temperature photoluminescence from ensembles of such QDs have peak wavelengths that can be tunably blue shifted by 35 nm (from 440 to 405 nm) and have line widths that narrow by 3 times (from 19 to 6 nm).
Authors:
 [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [2] ;  [2] ;  [1] ;  [1] ;  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Solid-State Lighting Science Energy Frontier Research Center
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Solid-State Lighting Science Energy Frontier Research Center. Center for Integrated Nanotechnologies
Publication Date:
Report Number(s):
SAND-2014-1138J
Journal ID: ISSN 1530-6984; 537321
Grant/Contract Number:
AC04-94AL85000
Type:
Accepted Manuscript
Journal Name:
Nano Letters
Additional Journal Information:
Journal Volume: 14; Journal Issue: 10; Journal ID: ISSN 1530-6984
Publisher:
American Chemical Society
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); USDOE Laboratory Directed Research and Development (LDRD) Program
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; InGaN; photoelectrochemical etching; quantum dots; quantum-size effects
OSTI Identifier:
1347347

Xiao, Xiaoyin, Fischer, Arthur J., Wang, George T., Lu, Ping, Koleske, Daniel D., Coltrin, Michael E., Wright, Jeremy B., Liu, Sheng, Brener, Igal, Subramania, Ganapathi S., and Tsao, Jeffrey Y.. Quantum-Size-Controlled Photoelectrochemical Fabrication of Epitaxial InGaN Quantum Dots. United States: N. p., Web. doi:10.1021/nl502151k.
Xiao, Xiaoyin, Fischer, Arthur J., Wang, George T., Lu, Ping, Koleske, Daniel D., Coltrin, Michael E., Wright, Jeremy B., Liu, Sheng, Brener, Igal, Subramania, Ganapathi S., & Tsao, Jeffrey Y.. Quantum-Size-Controlled Photoelectrochemical Fabrication of Epitaxial InGaN Quantum Dots. United States. doi:10.1021/nl502151k.
Xiao, Xiaoyin, Fischer, Arthur J., Wang, George T., Lu, Ping, Koleske, Daniel D., Coltrin, Michael E., Wright, Jeremy B., Liu, Sheng, Brener, Igal, Subramania, Ganapathi S., and Tsao, Jeffrey Y.. 2014. "Quantum-Size-Controlled Photoelectrochemical Fabrication of Epitaxial InGaN Quantum Dots". United States. doi:10.1021/nl502151k. https://www.osti.gov/servlets/purl/1347347.
@article{osti_1347347,
title = {Quantum-Size-Controlled Photoelectrochemical Fabrication of Epitaxial InGaN Quantum Dots},
author = {Xiao, Xiaoyin and Fischer, Arthur J. and Wang, George T. and Lu, Ping and Koleske, Daniel D. and Coltrin, Michael E. and Wright, Jeremy B. and Liu, Sheng and Brener, Igal and Subramania, Ganapathi S. and Tsao, Jeffrey Y.},
abstractNote = {In this paper, we demonstrate a new route to the precision fabrication of epitaxial semiconductor nanostructures in the sub-10 nm size regime: quantum-size-controlled photoelectrochemical (QSC-PEC) etching. We show that quantum dots (QDs) can be QSC-PEC-etched from epitaxial InGaN thin films using narrowband laser photoexcitation, and that the QD sizes (and hence bandgaps and photoluminescence wavelengths) are determined by the photoexcitation wavelength. Finally, low-temperature photoluminescence from ensembles of such QDs have peak wavelengths that can be tunably blue shifted by 35 nm (from 440 to 405 nm) and have line widths that narrow by 3 times (from 19 to 6 nm).},
doi = {10.1021/nl502151k},
journal = {Nano Letters},
number = 10,
volume = 14,
place = {United States},
year = {2014},
month = {8}
}