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Title: Influence of pH on the quantum-size-controlled photoelectrochemical etching of epitaxial InGaN quantum dots

Abstract

Illumination by a narrow-band laser has been shown to enable photoelectrochemical (PEC) etching of InGaN thin films into quantum dots with sizes controlled by the laser wavelength. Here, we investigate and elucidate the influence of solution pH on such quantum-size-controlled PEC etch process. We find that although a pH above 5 is often used for PEC etching of GaN-based materials, oxides (In 2O 3 and/or Ga 2O 3) form which interfere with quantum dot formation. Furthermore, at pH below 3, however, oxide-free QDs with self-terminated sizes can be successfully realized.

Authors:
 [1];  [1];  [1];  [1];  [1];  [1];  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1238656
Report Number(s):
SAND-2015-9888J
Journal ID: ISSN 1932-7447; 607996
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Physical Chemistry. C
Additional Journal Information:
Journal Volume: 119; Journal Issue: 50; Journal ID: ISSN 1932-7447
Publisher:
American Chemical Society
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY

Citation Formats

Xiao, Xiaoyin, Lu, Ping, Fischer, Arthur J., Coltrin, Michael E., Wang, George T., Koleske, Daniel D., and Tsao, Jeffrey Y. Influence of pH on the quantum-size-controlled photoelectrochemical etching of epitaxial InGaN quantum dots. United States: N. p., 2015. Web. doi:10.1021/acs.jpcc.5b09555.
Xiao, Xiaoyin, Lu, Ping, Fischer, Arthur J., Coltrin, Michael E., Wang, George T., Koleske, Daniel D., & Tsao, Jeffrey Y. Influence of pH on the quantum-size-controlled photoelectrochemical etching of epitaxial InGaN quantum dots. United States. doi:10.1021/acs.jpcc.5b09555.
Xiao, Xiaoyin, Lu, Ping, Fischer, Arthur J., Coltrin, Michael E., Wang, George T., Koleske, Daniel D., and Tsao, Jeffrey Y. Wed . "Influence of pH on the quantum-size-controlled photoelectrochemical etching of epitaxial InGaN quantum dots". United States. doi:10.1021/acs.jpcc.5b09555. https://www.osti.gov/servlets/purl/1238656.
@article{osti_1238656,
title = {Influence of pH on the quantum-size-controlled photoelectrochemical etching of epitaxial InGaN quantum dots},
author = {Xiao, Xiaoyin and Lu, Ping and Fischer, Arthur J. and Coltrin, Michael E. and Wang, George T. and Koleske, Daniel D. and Tsao, Jeffrey Y.},
abstractNote = {Illumination by a narrow-band laser has been shown to enable photoelectrochemical (PEC) etching of InGaN thin films into quantum dots with sizes controlled by the laser wavelength. Here, we investigate and elucidate the influence of solution pH on such quantum-size-controlled PEC etch process. We find that although a pH above 5 is often used for PEC etching of GaN-based materials, oxides (In2O3 and/or Ga2O3) form which interfere with quantum dot formation. Furthermore, at pH below 3, however, oxide-free QDs with self-terminated sizes can be successfully realized.},
doi = {10.1021/acs.jpcc.5b09555},
journal = {Journal of Physical Chemistry. C},
number = 50,
volume = 119,
place = {United States},
year = {2015},
month = {11}
}

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Cited by: 1 work
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