Enhanced electrical activation in In-implanted Ge by C co-doping

Feng, R.; Kremer, F.; Sprouster, D.; Mirzaei, S.; Decoster, S.; Glover, C.; Medling, S.; Pereira, C.; Russo, S.; Ridgway, M.

doi:10.1063/1.4936331

Title: Enhanced electrical activation in In-implanted Ge by C co-doping

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Abstract

At high dopant concentrations in Ge, electrically activating all implanted dopants is a major obstacle in the fulfillment of high-performance Ge-channel complementary metal oxide semiconductor devices. In this letter, we demonstrate a significant increase in the electrically-active dopant fraction in In-implanted Ge by co-doping with the isovalent element C. Electrical measurements have been correlated with x-ray absorption spectroscopy and transmission electron microscopy results in addition to density functional theory simulations. With C þ In co-doping, the electrically active fraction was doubled and tripled at In concentrations of 0.2 and 0.7 at. %, respectively. This marked improvement was the result of C-In pair formation such that In-induced strain in the Ge lattice was reduced while the precipitation of In and the formation of In-V clusters were both suppressed.

Authors:

Feng, R. ^[1]; Kremer, F. ^[1]; Sprouster, D. ^[2]; Mirzaei, S. ^[1]; Decoster, S. ^[3]; Glover, C. ^[4]; Medling, S. ^[1]; Pereira, C. ^[3]; Russo, S. ^[5]; Ridgway, M. ^[1]

Australian National Univ., Canberra, ACT (Australia)
Brookhaven National Lab. (BNL), Upton, NY (United States)
Katholieke Univ. Leuven, Heverlee (Belgium). Inst. voor Kern- en Stralingsfysica
Australian Nuclear Science and Technology Organisation (ANSTO), Melbourne, VIC (Australia). Australian Synchrotron
RMIT Univ., Melbourne (Australia)

Publication Date:: Sun Nov 22 00:00:00 EST 2015

Research Org.:: Brookhaven National Lab. (BNL), Upton, NY (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1341590

Report Number(s):: BNL-111930-2016-JA
Journal ID: ISSN 0003-6951; R&D Project: 20685

Grant/Contract Number:: SC00112704

Resource Type:: Accepted Manuscript

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 107; Journal Issue: 21; Journal ID: ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; CMOS; x-ray absorption spectroscopy; co-doping; Ge

Citation Formats


                    Feng, R., Kremer, F., Sprouster, D., Mirzaei, S., Decoster, S., Glover, C., Medling, S., Pereira, C., Russo, S., and Ridgway, M. Enhanced electrical activation in In-implanted Ge by C co-doping.  United States: N. p., 2015. 
Web.  doi:10.1063/1.4936331.

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                    Feng, R., Kremer, F., Sprouster, D., Mirzaei, S., Decoster, S., Glover, C., Medling, S., Pereira, C., Russo, S., & Ridgway, M. Enhanced electrical activation in In-implanted Ge by C co-doping.  United States.  https://doi.org/10.1063/1.4936331

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                    Feng, R., Kremer, F., Sprouster, D., Mirzaei, S., Decoster, S., Glover, C., Medling, S., Pereira, C., Russo, S., and Ridgway, M. Sun .  
"Enhanced electrical activation in In-implanted Ge by C co-doping".  United States.  https://doi.org/10.1063/1.4936331.  https://www.osti.gov/servlets/purl/1341590.

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@article{osti_1341590,

  title        = {Enhanced electrical activation in In-implanted Ge by C co-doping},

  author       = {Feng, R. and Kremer, F. and Sprouster, D. and Mirzaei, S. and Decoster, S. and Glover, C. and Medling, S. and Pereira, C. and Russo, S. and Ridgway, M.},

  abstractNote = {At high dopant concentrations in Ge, electrically activating all implanted dopants is a major obstacle in the fulfillment of high-performance Ge-channel complementary metal oxide semiconductor devices. In this letter, we demonstrate a significant increase in the electrically-active dopant fraction in In-implanted Ge by co-doping with the isovalent element C. Electrical measurements have been correlated with x-ray absorption spectroscopy and transmission electron microscopy results in addition to density functional theory simulations. With C þ In co-doping, the electrically active fraction was doubled and tripled at In concentrations of 0.2 and 0.7 at. %, respectively. This marked improvement was the result of C-In pair formation such that In-induced strain in the Ge lattice was reduced while the precipitation of In and the formation of In-V clusters were both suppressed.},

  doi          = {10.1063/1.4936331},

  journal      = {Applied Physics Letters},

  number       = 21,

  volume       = 107,

  place        = {United States},

  year         = {Sun Nov 22 00:00:00 EST 2015},

  month        = {Sun Nov 22 00:00:00 EST 2015}

}

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