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Title: Enhanced Electrical Activation in In-Implanted Si 0.35Ge 0.65 by C Co-Doping

In this report, we have achieved a significant increase in the electrically active dopant fraction in Indium (In)-implanted Si 0.35Ge 0.65, by co-doping with the isovalent element Carbon (C). Electrical measurements have been correlated with X-ray absorption spectroscopy to determine the electrical properties and the In atom lattice location. With C+In co-doping, the solid solubility of In in Si 0.35Ge 0.65 was at least tripled from between 0.02 and 0.06 at% to between 0.2 and 0.6 at% as a result of C–In pair formation, which suppressed In metal precipitation. A dramatic improvement of electrical properties was thus attained in the co-doped samples.
Authors:
 [1] ;  [1] ;  [2] ;  [1] ;  [3] ;  [4] ;  [1] ;  [5] ;  [5] ;  [6] ;  [1]
  1. Australian National Univ., Canberra, ACT (Australia)
  2. Brookhaven National Lab. (BNL), Upton, NY (United States)
  3. Katholieke Univ. Leuven, Heverlee (Belgium)
  4. Australian Nuclear Science and Technology Organisation (ANSTO), Melbourne, VIC (Australia). Australian Synchrotron
  5. Aarhus Univ. (Denmark)
  6. RMIT Univ., Melbourne, VIC (Australia)
Publication Date:
Report Number(s):
BNL-114207-2017-JA
Journal ID: ISSN 2166-3831; TRN: US1702364
Grant/Contract Number:
SC0012704
Type:
Accepted Manuscript
Journal Name:
Materials Research Letters
Additional Journal Information:
Journal Volume: 5; Journal Issue: 1; Journal ID: ISSN 2166-3831
Publisher:
Taylor and Francis
Research Org:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org:
USDOE Office of Science (SC), Nuclear Physics (NP) (SC-26)
Country of Publication:
United States
Language:
English
Subject:
73 NUCLEAR PHYSICS AND RADIATION PHYSICS
OSTI Identifier:
1389235