Electrical and structural properties of In-implanted Si1–xGex alloys

Feng, Ruixing; Kremer, F.; Sprouster, D. J.; Mirzaei, S.; Decoster, S.; Glover, C. J.; Medling, S. A.; Hansen, J. L.; Nylandsted-Larsen, A.; Russo, S. P.; Ridgway, M. C.

doi:10.1063/1.4940046

Title: Electrical and structural properties of In-implanted Si_1–xGe_x alloys

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Abstract

Here, we report on the effects of dopant concentration and substrate stoichiometry on the electrical and structural properties of In-implanted Si_1–xGe_x alloys. Correlating the fraction of electrically active In atoms from Hall Effect measurements with the In atomic environment determined by X-ray absorption spectroscopy, we observed the transition from electrically active, substitutional In at low In concentration to electrically inactive metallic In at high In concentration. The In solid-solubility limit has been quantified and was dependent on the Si_1–xGe_x alloy stoichiometry; the solid-solubility limit increased as the Ge fraction increased. This result was consistent with density functional theory calculations of two In atoms in a Si_1–xGe_x supercell that demonstrated that In–In pairing was energetically favorable for x ≲ 0.7 and energetically unfavorable for x ≳ 0.7. Transmission electron microscopy imaging further complemented the results described earlier with the In concentration and Si_1–xGe_x alloy stoichiometry dependencies readily visible. We have demonstrated that low resistivity values can be achieved with In implantation in Si_1–xGe_x alloys, and this combination of dopant and substrate represents an effective doping protocol.

Authors:

Feng, Ruixing ^[1];

^[1]; Sprouster, D. J. ^[2]; Mirzaei, S. ^[1]; Decoster, S. ^[3];

^[4]; Medling, S. A. ^[1]; Hansen, J. L. ^[5]; Nylandsted-Larsen, A. ^[5]; Russo, S. P. ^[6]; Ridgway, M. C. ^[1]

Australian National Univ., Canberra, ACT (Australia)
Brookhaven National Lab. (BNL), Upton, NY (United States)
KU Leuven, Leuven (Belgium)
Australian Synchrotron, Clayton, VIC (Australia)
Aarhus Univ. (Denmark)
RMIT Univ., Melbourne (Australia)

Publication Date:: Thu Jan 14 00:00:00 EST 2016

Research Org.:: Brookhaven National Lab. (BNL), Upton, NY (United States)

Sponsoring Org.:: BNL Program Development; USDOE

OSTI Identifier:: 1341515

Report Number(s):: BNL-111933-2016-JA
Journal ID: ISSN 0021-8979; R&D Project: 20685

Grant/Contract Number:: SC00112704

Resource Type:: Accepted Manuscript

Journal Name:: Journal of Applied Physics

Additional Journal Information:: Journal Volume: 119; Journal Issue: 2; Journal ID: ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; dopant concentration; substrate stoichiometry; x-ray absorption spectroscopy; Hall Effect

Citation Formats


                    Feng, Ruixing, Kremer, F., Sprouster, D. J., Mirzaei, S., Decoster, S., Glover, C. J., Medling, S. A., Hansen, J. L., Nylandsted-Larsen, A., Russo, S. P., and Ridgway, M. C. Electrical and structural properties of In-implanted Si1–xGex alloys.  United States: N. p., 2016. 
Web.  doi:10.1063/1.4940046.

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                    Feng, Ruixing, Kremer, F., Sprouster, D. J., Mirzaei, S., Decoster, S., Glover, C. J., Medling, S. A., Hansen, J. L., Nylandsted-Larsen, A., Russo, S. P., & Ridgway, M. C. Electrical and structural properties of In-implanted Si1–xGex alloys.  United States.  https://doi.org/10.1063/1.4940046

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                    Feng, Ruixing, Kremer, F., Sprouster, D. J., Mirzaei, S., Decoster, S., Glover, C. J., Medling, S. A., Hansen, J. L., Nylandsted-Larsen, A., Russo, S. P., and Ridgway, M. C. Thu .  
"Electrical and structural properties of In-implanted Si1–xGex alloys".  United States.  https://doi.org/10.1063/1.4940046.  https://www.osti.gov/servlets/purl/1341515.

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@article{osti_1341515,

  title        = {Electrical and structural properties of In-implanted Si1–xGex alloys},

  author       = {Feng, Ruixing and Kremer, F. and Sprouster, D. J. and Mirzaei, S. and Decoster, S. and Glover, C. J. and Medling, S. A. and Hansen, J. L. and Nylandsted-Larsen, A. and Russo, S. P. and Ridgway, M. C.},

  abstractNote = {Here, we report on the effects of dopant concentration and substrate stoichiometry on the electrical and structural properties of In-implanted Si1–xGex alloys. Correlating the fraction of electrically active In atoms from Hall Effect measurements with the In atomic environment determined by X-ray absorption spectroscopy, we observed the transition from electrically active, substitutional In at low In concentration to electrically inactive metallic In at high In concentration. The In solid-solubility limit has been quantified and was dependent on the Si1–xGex alloy stoichiometry; the solid-solubility limit increased as the Ge fraction increased. This result was consistent with density functional theory calculations of two In atoms in a Si1–xGex supercell that demonstrated that In–In pairing was energetically favorable for x ≲ 0.7 and energetically unfavorable for x ≳ 0.7. Transmission electron microscopy imaging further complemented the results described earlier with the In concentration and Si1–xGex alloy stoichiometry dependencies readily visible. We have demonstrated that low resistivity values can be achieved with In implantation in Si1–xGex alloys, and this combination of dopant and substrate represents an effective doping protocol.},

  doi          = {10.1063/1.4940046},

  journal      = {Journal of Applied Physics},

  number       = 2,

  volume       = 119,

  place        = {United States},

  year         = {Thu Jan 14 00:00:00 EST 2016},

  month        = {Thu Jan 14 00:00:00 EST 2016}

}

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Title: Electrical and structural properties of In-implanted Si1–xGex alloys

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Title: Electrical and structural properties of In-implanted Si_1–xGe_x alloys