Structural and electrical properties of In-implanted Ge

Feng, R.; Kremer, F.; Sprouster, D. J.; Mirzaei, S.; Decoster, S.; Glover, C. J.; Medling, S. A.; Russo, S. P.; Ridgway, M. C.

doi:10.1063/1.4934200

Title: Structural and electrical properties of In-implanted Ge

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Abstract

Here, we report on the effects of dopant concentration on the structural and electrical properties of In-implanted Ge. For In concentrations of ≤ 0.2 at. %, extended x-ray absorption fine structure and x-ray absorption near-edge structure measurements demonstrate that all In atoms occupy a substitutional lattice site while metallic In precipitates are apparent in transmission electron micrographs for In concentrations ≥0.6 at. %. Evidence of the formation of In-vacancy complexes deduced from extended x-ray absorption fine structure measurements is complimented by density functional theory simulations. Hall effect measurements of the conductivity, carrier density, and carrier mobility are then correlated with the substitutional In fraction.

Authors:

Feng, R. ^[1];

^[1]; Sprouster, D. J. ^[2]; Mirzaei, S. ^[1]; Decoster, S. ^[3]; Glover, C. J. ^[4]; Medling, S. A. ^[1]; Russo, S. P. ^[5]; Ridgway, M. C. ^[1]

Australian National Univ., Canberra, ACT (Australia)
Brookhaven National Lab. (BNL), Upton, NY (United States)
KU Leuven, Leuven (Belgium)
Australian Synchrotron, Clayton, VIC (Australia)
RMIT Univ., Melbourne (Australia)

Publication Date:: Thu Oct 22 00:00:00 EDT 2015

Research Org.:: Brookhaven National Lab. (BNL), Upton, NY (United States)

Sponsoring Org.:: BNL Program Development

OSTI Identifier:: 1340340

Report Number(s):: BNL-111923-2016-JA
Journal ID: ISSN 0021-8979; R&D Project: 20685

Grant/Contract Number:: SC00112704

Resource Type:: Accepted Manuscript

Journal Name:: Journal of Applied Physics

Additional Journal Information:: Journal Volume: 118; Journal Issue: 16; Journal ID: ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Feng, R., Kremer, F., Sprouster, D. J., Mirzaei, S., Decoster, S., Glover, C. J., Medling, S. A., Russo, S. P., and Ridgway, M. C. Structural and electrical properties of In-implanted Ge.  United States: N. p., 2015. 
Web.  doi:10.1063/1.4934200.

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                    Feng, R., Kremer, F., Sprouster, D. J., Mirzaei, S., Decoster, S., Glover, C. J., Medling, S. A., Russo, S. P., & Ridgway, M. C. Structural and electrical properties of In-implanted Ge.  United States.  https://doi.org/10.1063/1.4934200

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                    Feng, R., Kremer, F., Sprouster, D. J., Mirzaei, S., Decoster, S., Glover, C. J., Medling, S. A., Russo, S. P., and Ridgway, M. C. Thu .  
"Structural and electrical properties of In-implanted Ge".  United States.  https://doi.org/10.1063/1.4934200.  https://www.osti.gov/servlets/purl/1340340.

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@article{osti_1340340,

  title        = {Structural and electrical properties of In-implanted Ge},

  author       = {Feng, R. and Kremer, F. and Sprouster, D. J. and Mirzaei, S. and Decoster, S. and Glover, C. J. and Medling, S. A. and Russo, S. P. and Ridgway, M. C.},

  abstractNote = {Here, we report on the effects of dopant concentration on the structural and electrical properties of In-implanted Ge. For In concentrations of ≤ 0.2 at. %, extended x-ray absorption fine structure and x-ray absorption near-edge structure measurements demonstrate that all In atoms occupy a substitutional lattice site while metallic In precipitates are apparent in transmission electron micrographs for In concentrations ≥0.6 at. %. Evidence of the formation of In-vacancy complexes deduced from extended x-ray absorption fine structure measurements is complimented by density functional theory simulations. Hall effect measurements of the conductivity, carrier density, and carrier mobility are then correlated with the substitutional In fraction.},

  doi          = {10.1063/1.4934200},

  journal      = {Journal of Applied Physics},

  number       = 16,

  volume       = 118,

  place        = {United States},

  year         = {Thu Oct 22 00:00:00 EDT 2015},

  month        = {Thu Oct 22 00:00:00 EDT 2015}

}

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