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Title: Structural and electrical properties of In-implanted Ge

Here, we report on the effects of dopant concentration on the structural and electrical properties of In-implanted Ge. For In concentrations of ≤ 0.2 at. %, extended x-ray absorption fine structure and x-ray absorption near-edge structure measurements demonstrate that all In atoms occupy a substitutional lattice site while metallic In precipitates are apparent in transmission electron micrographs for In concentrations ≥0.6 at. %. Evidence of the formation of In-vacancy complexes deduced from extended x-ray absorption fine structure measurements is complimented by density functional theory simulations. Hall effect measurements of the conductivity, carrier density, and carrier mobility are then correlated with the substitutional In fraction.
Authors:
 [1] ; ORCiD logo [1] ;  [2] ;  [1] ;  [3] ;  [4] ;  [1] ;  [5] ;  [1]
  1. Australian National Univ., Canberra, ACT (Australia)
  2. Brookhaven National Lab. (BNL), Upton, NY (United States)
  3. KU Leuven, Leuven (Belgium)
  4. Australian Synchrotron, Clayton, VIC (Australia)
  5. RMIT Univ., Melbourne (Australia)
Publication Date:
Report Number(s):
BNL-111923-2016-JA
Journal ID: ISSN 0021-8979; R&D Project: 20685
Grant/Contract Number:
SC00112704
Type:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 118; Journal Issue: 16; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Research Org:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org:
BNL Program Development
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE
OSTI Identifier:
1340340