Enhanced electrical activation in In-implanted Ge by C co-doping

Journal Article · 22 November 2015 · Applied Physics Letters

DOI: https://doi.org/10.1063/1.4936331 · OSTI ID:1341590

Feng, R. ^[1]; Kremer, F. ^[1]; Sprouster, D. ^[2]; Mirzaei, S. ^[1]; Decoster, S. ^[3]; Glover, C. ^[4]; Medling, S. ^[1]; Pereira, C. ^[3]; Russo, S. ^[5]; Ridgway, M. ^[1]

---

1. Australian National Univ., Canberra, ACT (Australia)
2. Brookhaven National Lab. (BNL), Upton, NY (United States)
3. Katholieke Univ. Leuven, Heverlee (Belgium). Inst. voor Kern- en Stralingsfysica
4. Australian Nuclear Science and Technology Organisation (ANSTO), Melbourne, VIC (Australia). Australian Synchrotron
5. RMIT Univ., Melbourne (Australia)

At high dopant concentrations in Ge, electrically activating all implanted dopants is a major obstacle in the fulfillment of high-performance Ge-channel complementary metal oxide semiconductor devices. In this letter, we demonstrate a significant increase in the electrically-active dopant fraction in In-implanted Ge by co-doping with the isovalent element C. Electrical measurements have been correlated with x-ray absorption spectroscopy and transmission electron microscopy results in addition to density functional theory simulations. With C þ In co-doping, the electrically active fraction was doubled and tripled at In concentrations of 0.2 and 0.7 at. %, respectively. This marked improvement was the result of C-In pair formation such that In-induced strain in the Ge lattice was reduced while the precipitation of In and the formation of In-V clusters were both suppressed.

• Research Organization: Brookhaven National Laboratory (BNL), Upton, NY (United States)
• Sponsoring Organization: USDOE
• Grant/Contract Number: SC00112704
• OSTI ID: 1341590
• Report Number(s): BNL-111930-2016-JA; R&D Project: 20685
• Journal Information: Applied Physics Letters, Vol. 107, Issue 21; ISSN 0003-6951
• Publisher: American Institute of Physics (AIP)Copyright Statement
• Country of Publication: United States
• Language: English