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Title: Sn-doped Bi 1.1Sb 0.9Te 2S bulk crystal topological insulator with excellent properties

Abstract

A long-standing issue in topological insulator research has been to find a bulk single crystal material that provides a high quality platform for characterizing topological surface states without interference from bulk electronic states. This material would ideally be a bulk insulator, have a surface state Dirac point energy well isolated from the bulk valence and conduction bands, display quantum oscillations from the surface state electrons, and be growable as large, high quality bulk single crystals. Here we show that this materials obstacle is overcome by bulk crystals of lightly Sn-doped Bi 1.1Sb 0.9Te 2S grown by the Vertical Bridgeman method. We characterize Sn-BSTS via angle-resolved photoemission spectroscopy, scanning tunneling microscopy, transport studies, X-ray diffraction, and Raman scattering. We present this material as a high quality topological insulator that can be reliably grown as bulk single crystals and thus studied by many researchers interested in topological surface states.

Authors:
;  [1];  [2];  [2];  [3];  [4];  [5];  [5];  [2];  [2];  [2];  [6];  [2];  [2];  [7];  [2]
  1. Princeton Univ., NJ (United States); Brookhaven National Lab. (BNL), Upton, NY (United States)
  2. Princeton Univ., NJ (United States)
  3. Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
  4. Univ. of Toronto, ON (Canada)
  5. Boston College, Chestnut Hill, MA (United States)
  6. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
  7. Brookhaven National Lab. (BNL), Upton, NY (United States)
Publication Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1303011
Alternate Identifier(s):
OSTI ID: 1379306
Report Number(s):
BNL-112486-2016-JA
Journal ID: ISSN 2041-1723; R&D Project: PO016; KC0202020
Grant/Contract Number:  
SC0012704; AC02-05CH11231
Resource Type:
Accepted Manuscript
Journal Name:
Nature Communications
Additional Journal Information:
Journal Volume: 7; Journal ID: ISSN 2041-1723
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

S. K. Kushwaha, Pletikosic, I., Liang, T., Gyenis, A., Lapidus, S. H., Tian, Y., Zhao, H., Burch, K. S., Lin, Jingjing, Wang, Wudi, Ji, H., Fedorov, A. V., Yazdani, A., Ong, N. P., Valla, T., and Cava, R. J. Sn-doped Bi1.1Sb0.9Te2S bulk crystal topological insulator with excellent properties. United States: N. p., 2016. Web. doi:10.1038/ncomms11456.
S. K. Kushwaha, Pletikosic, I., Liang, T., Gyenis, A., Lapidus, S. H., Tian, Y., Zhao, H., Burch, K. S., Lin, Jingjing, Wang, Wudi, Ji, H., Fedorov, A. V., Yazdani, A., Ong, N. P., Valla, T., & Cava, R. J. Sn-doped Bi1.1Sb0.9Te2S bulk crystal topological insulator with excellent properties. United States. doi:10.1038/ncomms11456.
S. K. Kushwaha, Pletikosic, I., Liang, T., Gyenis, A., Lapidus, S. H., Tian, Y., Zhao, H., Burch, K. S., Lin, Jingjing, Wang, Wudi, Ji, H., Fedorov, A. V., Yazdani, A., Ong, N. P., Valla, T., and Cava, R. J. Wed . "Sn-doped Bi1.1Sb0.9Te2S bulk crystal topological insulator with excellent properties". United States. doi:10.1038/ncomms11456. https://www.osti.gov/servlets/purl/1303011.
@article{osti_1303011,
title = {Sn-doped Bi1.1Sb0.9Te2S bulk crystal topological insulator with excellent properties},
author = {S. K. Kushwaha and Pletikosic, I. and Liang, T. and Gyenis, A. and Lapidus, S. H. and Tian, Y. and Zhao, H. and Burch, K. S. and Lin, Jingjing and Wang, Wudi and Ji, H. and Fedorov, A. V. and Yazdani, A. and Ong, N. P. and Valla, T. and Cava, R. J.},
abstractNote = {A long-standing issue in topological insulator research has been to find a bulk single crystal material that provides a high quality platform for characterizing topological surface states without interference from bulk electronic states. This material would ideally be a bulk insulator, have a surface state Dirac point energy well isolated from the bulk valence and conduction bands, display quantum oscillations from the surface state electrons, and be growable as large, high quality bulk single crystals. Here we show that this materials obstacle is overcome by bulk crystals of lightly Sn-doped Bi1.1Sb0.9Te2S grown by the Vertical Bridgeman method. We characterize Sn-BSTS via angle-resolved photoemission spectroscopy, scanning tunneling microscopy, transport studies, X-ray diffraction, and Raman scattering. We present this material as a high quality topological insulator that can be reliably grown as bulk single crystals and thus studied by many researchers interested in topological surface states.},
doi = {10.1038/ncomms11456},
journal = {Nature Communications},
number = ,
volume = 7,
place = {United States},
year = {2016},
month = {4}
}

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    Works referencing / citing this record:

    Enhancement in surface mobility and quantum transport of Bi2−xSbxTe3−ySey topological insulator by controlling the crystal growth conditions
    journal, November 2018


    Enhancement in surface mobility and quantum transport of Bi2−xSbxTe3−ySey topological insulator by controlling the crystal growth conditions
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