Sn-doped Bi1.1Sb0.9Te2S bulk crystal topological insulator with excellent properties
Abstract
A long-standing issue in topological insulator research has been to find a bulk single crystal material that provides a high-quality platform for characterizing topological surface states without interference from bulk electronic states. This material would ideally be a bulk insulator, have a surface state Dirac point energy well isolated from the bulk valence and conduction bands, display quantum oscillations from the surface state electrons and be growable as large, high-quality bulk single crystals. Here we show that this material obstacle is overcome by bulk crystals of lightly Sn-doped Bi 1.1 Sb 0.9 Te 2 S grown by the vertical Bridgman method. We characterize Sn-BSTS via angle-resolved photoemission spectroscopy, scanning tunnelling microscopy, transport studies, X-ray diffraction and Raman scattering. We present this material as a high-quality topological insulator that can be reliably grown as bulk single crystals and thus studied by many researchers interested in topological surface states.
- Authors:
-
- Princeton Univ., NJ (United States); Brookhaven National Lab. (BNL), Upton, NY (United States)
- Princeton Univ., NJ (United States)
- Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
- Univ. of Toronto, ON (Canada)
- Boston College, Chestnut Hill, MA (United States)
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Publication Date:
- Research Org.:
- Brookhaven National Laboratory (BNL), Upton, NY (United States); Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1303011
- Alternate Identifier(s):
- OSTI ID: 1379306
- Report Number(s):
- BNL-112486-2016-JA
Journal ID: ISSN 2041-1723; R&D Project: PO016; KC0202020
- Grant/Contract Number:
- SC0012704; AC02-05CH11231
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Nature Communications
- Additional Journal Information:
- Journal Volume: 7; Journal ID: ISSN 2041-1723
- Publisher:
- Nature Publishing Group
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Citation Formats
S. K. Kushwaha, Pletikosic, I., Liang, T., Gyenis, A., Lapidus, S. H., Tian, Y., Zhao, H., Burch, K. S., Lin, Jingjing, Wang, Wudi, Ji, H., Fedorov, A. V., Yazdani, A., Ong, N. P., Valla, T., and Cava, R. J. Sn-doped Bi1.1Sb0.9Te2S bulk crystal topological insulator with excellent properties. United States: N. p., 2016.
Web. doi:10.1038/ncomms11456.
S. K. Kushwaha, Pletikosic, I., Liang, T., Gyenis, A., Lapidus, S. H., Tian, Y., Zhao, H., Burch, K. S., Lin, Jingjing, Wang, Wudi, Ji, H., Fedorov, A. V., Yazdani, A., Ong, N. P., Valla, T., & Cava, R. J. Sn-doped Bi1.1Sb0.9Te2S bulk crystal topological insulator with excellent properties. United States. https://doi.org/10.1038/ncomms11456
S. K. Kushwaha, Pletikosic, I., Liang, T., Gyenis, A., Lapidus, S. H., Tian, Y., Zhao, H., Burch, K. S., Lin, Jingjing, Wang, Wudi, Ji, H., Fedorov, A. V., Yazdani, A., Ong, N. P., Valla, T., and Cava, R. J. Wed .
"Sn-doped Bi1.1Sb0.9Te2S bulk crystal topological insulator with excellent properties". United States. https://doi.org/10.1038/ncomms11456. https://www.osti.gov/servlets/purl/1303011.
@article{osti_1303011,
title = {Sn-doped Bi1.1Sb0.9Te2S bulk crystal topological insulator with excellent properties},
author = {S. K. Kushwaha and Pletikosic, I. and Liang, T. and Gyenis, A. and Lapidus, S. H. and Tian, Y. and Zhao, H. and Burch, K. S. and Lin, Jingjing and Wang, Wudi and Ji, H. and Fedorov, A. V. and Yazdani, A. and Ong, N. P. and Valla, T. and Cava, R. J.},
abstractNote = {A long-standing issue in topological insulator research has been to find a bulk single crystal material that provides a high-quality platform for characterizing topological surface states without interference from bulk electronic states. This material would ideally be a bulk insulator, have a surface state Dirac point energy well isolated from the bulk valence and conduction bands, display quantum oscillations from the surface state electrons and be growable as large, high-quality bulk single crystals. Here we show that this material obstacle is overcome by bulk crystals of lightly Sn-doped Bi 1.1 Sb 0.9 Te 2 S grown by the vertical Bridgman method. We characterize Sn-BSTS via angle-resolved photoemission spectroscopy, scanning tunnelling microscopy, transport studies, X-ray diffraction and Raman scattering. We present this material as a high-quality topological insulator that can be reliably grown as bulk single crystals and thus studied by many researchers interested in topological surface states.},
doi = {10.1038/ncomms11456},
journal = {Nature Communications},
number = ,
volume = 7,
place = {United States},
year = {Wed Apr 27 00:00:00 EDT 2016},
month = {Wed Apr 27 00:00:00 EDT 2016}
}
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