Simulation, Modeling, and Crystal Growth of Cd0.9Zn0.1Te for Nuclear Spectrometers
- EIC Laboratories, Inc.
- State University of New York, Stony Brook
- Fisk University, Nashville, TN
- ORNL
High-quality, large (10 cm long and 2.5 cm diameter), nuclear spectrometer grade Cd{sub 0.9}Zn{sub 0.1}Te (CZT) single crystals have been grown by a controlled vertical Bridgman technique using in-house zone refined precursor materials (Cd, Zn, and Te). A state-of-the-art computer model, multizone adaptive scheme for transport and phase-change processes (MASTRAP), is used to model heat and mass transfer in the Bridgman growth system and to predict the stress distribution in the as-grown CZT crystal and optimize the thermal profile. The model accounts for heat transfer in the multiphase system, convection in the melt, and interface dynamics. The grown semi-insulating (SI) CZT crystals have demonstrated promising results for high-resolution room-temperature radiation detectors due to their high dark resistivity ({rho} {approx} 2.8 x 10{sup 11} {Theta} cm), good charge-transport properties, electron and hole mobility-life-time product, {mu}{tau}{sub e} {approx} (2-5) x 10{sup -3} and {mu}{tau}{sub h} {approx} (3-5) x 10{sup -5} respectively, and low cost of production. Spectroscopic ellipsometry and optical transmission measurements were carried out on the grown CZT crystals using two-modulator generalized ellipsometry (2-MGE). The refractive index n and extinction coefficient k were determined by mathematically eliminating the {approx}3-nm surface roughness layer. Nuclear detection measurements on the single-element CZT detectors with {sup 241}Am and {sup 137}Cs clearly detected 59.6 and 662 keV energies with energy resolution (FWHM) of 2.4 keV (4.0%) and 9.2 keV (1.4%), respectively.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- DOE Contract Number:
- DE-AC05-00OR22725
- OSTI ID:
- 1003604
- Journal Information:
- Journal of Electronic Materials, Vol. 35, Issue 6; ISSN 0361--5235
- Country of Publication:
- United States
- Language:
- English
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