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Title: Stabilization of orthorhombic phase in single-crystal ZnSnN 2 films

Abstract

Here, we report on the crystal structure of epitaxial ZnSnN2 films synthesized via plasma-assisted vapor deposition on (111) yttria stabilized zirconia (YSZ) and (001) lithium gallate (LiGaO2) substrates. X-ray diffraction measurements performed on ZnSnN2 films deposited on LiGaO2 substrates show evidence of single-crystal, phase-pure orthorhombic structure in the Pn21a symmetry [space group (33)], with lattice parameters in good agreement with theoretically predicted values. This Pn21a symmetry is imposed on the ZnSnN2 films by the LiGaO2 substrate, which also has orthorhombic symmetry. A structural change from the wurtzite phase to the orthorhombic phase in films grown at high substrate temperatures ~550°C and low values of nitrogen flux ~10–5 Torr is observed in ZnSnN2 films deposited on YSZ characterized by lattice contraction in the basal plane and a 5.7% expansion of the out-of-plane lattice parameter.

Authors:
ORCiD logo; ; ; ; ; ORCiD logo; ; ORCiD logo; ;
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
Sponsoring Org.:
USDOE; National Science Foundation (NSF)
OSTI Identifier:
1272652
Alternate Identifier(s):
OSTI ID: 1306610; OSTI ID: 1421199
Grant/Contract Number:  
AC02-05CH11231; AC02-06CH11357; FG02-94ER14466
Resource Type:
Published Article
Journal Name:
AIP Advances
Additional Journal Information:
Journal Name: AIP Advances Journal Volume: 6 Journal Issue: 7; Journal ID: ISSN 2158-3226
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Senabulya, Nancy, Feldberg, Nathaniel, Makin, Robert. A., Yang, Yongsoo, Shi, Guangsha, Jones, Christina M., Kioupakis, Emmanouil, Mathis, James, Clarke, Roy, and Durbin, Steven M. Stabilization of orthorhombic phase in single-crystal ZnSnN 2 films. United States: N. p., 2016. Web. doi:10.1063/1.4960109.
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Senabulya, Nancy, Feldberg, Nathaniel, Makin, Robert. A., Yang, Yongsoo, Shi, Guangsha, Jones, Christina M., Kioupakis, Emmanouil, Mathis, James, Clarke, Roy, & Durbin, Steven M. Stabilization of orthorhombic phase in single-crystal ZnSnN 2 films. United States. https://doi.org/10.1063/1.4960109
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Senabulya, Nancy, Feldberg, Nathaniel, Makin, Robert. A., Yang, Yongsoo, Shi, Guangsha, Jones, Christina M., Kioupakis, Emmanouil, Mathis, James, Clarke, Roy, and Durbin, Steven M. Fri . "Stabilization of orthorhombic phase in single-crystal ZnSnN 2 films". United States. https://doi.org/10.1063/1.4960109.
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@article{osti_1272652,
title = {Stabilization of orthorhombic phase in single-crystal ZnSnN 2 films},
author = {Senabulya, Nancy and Feldberg, Nathaniel and Makin, Robert. A. and Yang, Yongsoo and Shi, Guangsha and Jones, Christina M. and Kioupakis, Emmanouil and Mathis, James and Clarke, Roy and Durbin, Steven M.},
abstractNote = {Here, we report on the crystal structure of epitaxial ZnSnN2 films synthesized via plasma-assisted vapor deposition on (111) yttria stabilized zirconia (YSZ) and (001) lithium gallate (LiGaO2) substrates. X-ray diffraction measurements performed on ZnSnN2 films deposited on LiGaO2 substrates show evidence of single-crystal, phase-pure orthorhombic structure in the Pn21a symmetry [space group (33)], with lattice parameters in good agreement with theoretically predicted values. This Pn21a symmetry is imposed on the ZnSnN2 films by the LiGaO2 substrate, which also has orthorhombic symmetry. A structural change from the wurtzite phase to the orthorhombic phase in films grown at high substrate temperatures ~550°C and low values of nitrogen flux ~10–5 Torr is observed in ZnSnN2 films deposited on YSZ characterized by lattice contraction in the basal plane and a 5.7% expansion of the out-of-plane lattice parameter.},
doi = {10.1063/1.4960109},
journal = {AIP Advances},
number = 7,
volume = 6,
place = {United States},
year = {Fri Jul 01 00:00:00 EDT 2016},
month = {Fri Jul 01 00:00:00 EDT 2016}
}
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https://doi.org/10.1063/1.4960109
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Works referenced in this record:

Band-gap control of GaInP using Sb as a surfactant
journal, September 1999

  • Shurtleff, J. K.; Lee, R. T.; Fetzer, C. M.
  • Applied Physics Letters, Vol. 75, Issue 13
  • DOI: 10.1063/1.124869

Bandgap engineering of ZnSnP 2 for high-efficiency solar cells
journal, June 2012

  • Scanlon, David O.; Walsh, Aron
  • Applied Physics Letters, Vol. 100, Issue 25
  • DOI: 10.1063/1.4730375

Band gap of sphalerite and chalcopyrite phases of epitaxial ZnSnP2
journal, June 2010

  • St-Jean, P.; Seryogin, G. A.; Francoeur, S.
  • Applied Physics Letters, Vol. 96, Issue 23
  • DOI: 10.1063/1.3442917

Structural and Optoelectronic Characterization of RF Sputtered ZnSnN 2
journal, February 2013

  • Lahourcade, Lise; Coronel, Naomi C.; Delaney, Kris T.
  • Advanced Materials, Vol. 25, Issue 18
  • DOI: 10.1002/adma.201204718

Quasiparticle band structure of Zn-IV-N 2 compounds
journal, October 2011

  • Punya, Atchara; Lambrecht, Walter R. L.; van Schilfgaarde, Mark
  • Physical Review B, Vol. 84, Issue 16
  • DOI: 10.1103/PhysRevB.84.165204

Growth, disorder, and physical properties of ZnSnN 2
journal, July 2013

  • Feldberg, N.; Aldous, J. D.; Linhart, W. M.
  • Applied Physics Letters, Vol. 103, Issue 4
  • DOI: 10.1063/1.4816438

Band Gap Dependence on Cation Disorder in ZnSnN 2 Solar Absorber
journal, October 2015

  • Veal, Tim D.; Feldberg, Nathaniel; Quackenbush, Nicholas F.
  • Advanced Energy Materials, Vol. 5, Issue 24
  • DOI: 10.1002/aenm.201501462

Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells
journal, March 1961

  • Shockley, William; Queisser, Hans J.
  • Journal of Applied Physics, Vol. 32, Issue 3, p. 510-519
  • DOI: 10.1063/1.1736034

Limiting efficiency of silicon solar cells
journal, May 1984

  • Tiedje, T.; Yablonovitch, E.; Cody, G.D.
  • IEEE Transactions on Electron Devices, Vol. 31, Issue 5, p. 711-716
  • DOI: 10.1109/T-ED.1984.21594

Analysis of tandem solar cell efficiencies under AM1.5G spectrum using a rapid flux calculation method
journal, May 2008

  • Bremner, S. P.; Levy, M. Y.; Honsberg, C. B.
  • Progress in Photovoltaics: Research and Applications, Vol. 16, Issue 3
  • DOI: 10.1002/pip.799

Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays
journal, February 2013

Charge-neutral disorder and polytypes in heterovalent wurtzite-based ternary semiconductors: The importance of the octet rule
journal, May 2015

Synthesis, lattice structure, and band gap of ZnSnN 2
journal, June 2013

  • Quayle, Paul C.; He, Keliang; Shan, Jie
  • MRS Communications, Vol. 3, Issue 3
  • DOI: 10.1557/mrc.2013.19

From ultrasoft pseudopotentials to the projector augmented-wave method
journal, January 1999

Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
journal, October 1996

Generalized Gradient Approximation Made Simple
journal, October 1996

  • Perdew, John P.; Burke, Kieron; Ernzerhof, Matthias
  • Physical Review Letters, Vol. 77, Issue 18, p. 3865-3868
  • DOI: 10.1103/PhysRevLett.77.3865

Improved data acquisition in grazing-incidence X-ray scattering experiments using a pixel detector
journal, June 2005

  • Schlepütz, C. M.; Herger, R.; Willmott, P. R.
  • Acta Crystallographica Section A Foundations of Crystallography, Vol. 61, Issue 4
  • DOI: 10.1107/S0108767305014790

Angle calculations for a (2+3)-type diffractometer: focus on area detectors
journal, December 2010

  • Schlepütz, Christian M.; Mariager, Simon O.; Pauli, Stephan A.
  • Journal of Applied Crystallography, Vol. 44, Issue 1
  • DOI: 10.1107/S0021889810048922

Quantitative determination of the order parameter in epitaxial layers of ZnSnP2
journal, April 2000

  • Francoeur, S.; Seryogin, G. A.; Nikishin, S. A.
  • Applied Physics Letters, Vol. 76, Issue 15
  • DOI: 10.1063/1.126240
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    • DOI: 10.1002/pssa.201800875

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    • DOI: 10.1039/c7ta00406k

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    journal, May 2018

    • Lyu, Sai; Lambrecht, Walter R. L.
    • Journal of Applied Physics, Vol. 123, Issue 20
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    Erratum: “Stabilization of orthorhombic phase in single-crystal ZnSnN 2 films” [AIP Advances 6, 075019 (2016)]
    journal, December 2018

    • Senabulya, Nancy; Feldberg, Nathaniel; Makin, Robert. A.
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