Stabilization of orthorhombic phase in single-crystal ZnSnN{sub 2} films

doi:10.1063/1.4960109

Title: Stabilization of orthorhombic phase in single-crystal ZnSnN{sub 2} films

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Abstract

We report on the crystal structure of epitaxial ZnSnN{sub 2} films synthesized via plasma-assisted vapor deposition on (111) yttria stabilized zirconia (YSZ) and (001) lithium gallate (LiGaO{sub 2}) substrates. X-ray diffraction measurements performed on ZnSnN{sub 2} films deposited on LiGaO{sub 2} substrates show evidence of single-crystal, phase-pure orthorhombic structure in the Pn2{sub 1}a symmetry [space group (33)], with lattice parameters in good agreement with theoretically predicted values. This Pn2{sub 1}a symmetry is imposed on the ZnSnN{sub 2} films by the LiGaO{sub 2} substrate, which also has orthorhombic symmetry. A structural change from the wurtzite phase to the orthorhombic phase in films grown at high substrate temperatures ∼550°C and low values of nitrogen flux ∼10{sup −5} Torr is observed in ZnSnN{sub 2} films deposited on YSZ characterized by lattice contraction in the basal plane and a 5.7% expansion of the out-of-plane lattice parameter.

Authors:

Senabulya, Nancy; Jones, Christina M.; Mathis, James ^[1]; Feldberg, Nathaniel ^[2]; Makin, Robert A.; Durbin, Steven M. ^[3]; Yang, Yongsoo ^[4]; Shi, Guangsha; Kioupakis, Emmanouil ^[5]; Clarke, Roy ^[1]; Department of Physics, University of Michigan, Ann Arbor, Michigan 48109 ^[6]

Applied Physics Program, University of Michigan, Ann Arbor, Michigan 48109 (United States)
Department of Physics, University at Buffalo, Buffalo, New York 14260 (United States)
Department of Electrical and Computer Engineering, Western Michigan University, Kalamazoo, Michigan, 49008-5329 (United States)
Department of Physics, University of Michigan, Ann Arbor, Michigan 48109 (United States)
Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States)
(United States)

Publication Date:: Fri Jul 15 00:00:00 EDT 2016

OSTI Identifier:: 22611441

Resource Type:: Journal Article

Resource Relation:: Journal Name: AIP Advances; Journal Volume: 6; Journal Issue: 7; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)

Country of Publication:: United States

Language:: English

Subject:: 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CONTRACTION; CRYSTAL STRUCTURE; DEPOSITION; EPITAXY; FILMS; GALLIUM COMPOUNDS; LATTICE PARAMETERS; LITHIUM COMPOUNDS; MONOCRYSTALS; NITROGEN COMPOUNDS; ORTHORHOMBIC LATTICES; SPACE GROUPS; STABILIZATION; SUBSTRATES; TIN COMPOUNDS; X-RAY DIFFRACTION; YTTRIUM OXIDES; ZINC COMPOUNDS; ZIRCONIUM OXIDES

Citation Formats


                    Senabulya, Nancy, Jones, Christina M., Mathis, James, Feldberg, Nathaniel, Makin, Robert A., Durbin, Steven M., Yang, Yongsoo, Shi, Guangsha, Kioupakis, Emmanouil, Clarke, Roy, and Department of Physics, University of Michigan, Ann Arbor, Michigan 48109. Stabilization of orthorhombic phase in single-crystal ZnSnN{sub 2} films.  United States: N. p., 2016. 
        Web.  doi:10.1063/1.4960109.

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                    Senabulya, Nancy, Jones, Christina M., Mathis, James, Feldberg, Nathaniel, Makin, Robert A., Durbin, Steven M., Yang, Yongsoo, Shi, Guangsha, Kioupakis, Emmanouil, Clarke, Roy, & Department of Physics, University of Michigan, Ann Arbor, Michigan 48109. Stabilization of orthorhombic phase in single-crystal ZnSnN{sub 2} films.  United States.  doi:10.1063/1.4960109.

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                    Senabulya, Nancy, Jones, Christina M., Mathis, James, Feldberg, Nathaniel, Makin, Robert A., Durbin, Steven M., Yang, Yongsoo, Shi, Guangsha, Kioupakis, Emmanouil, Clarke, Roy, and Department of Physics, University of Michigan, Ann Arbor, Michigan 48109. Fri .  
        "Stabilization of orthorhombic phase in single-crystal ZnSnN{sub 2} films".  United States.  
        doi:10.1063/1.4960109.

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@article{osti_22611441,

  title        = {Stabilization of orthorhombic phase in single-crystal ZnSnN{sub 2} films},

  author       = {Senabulya, Nancy and Jones, Christina M. and Mathis, James and Feldberg, Nathaniel and Makin, Robert A. and Durbin, Steven M. and Yang, Yongsoo and Shi, Guangsha and Kioupakis, Emmanouil and Clarke, Roy and Department of Physics, University of Michigan, Ann Arbor, Michigan 48109},

  abstractNote = {We report on the crystal structure of epitaxial ZnSnN{sub 2} films synthesized via plasma-assisted vapor deposition on (111) yttria stabilized zirconia (YSZ) and (001) lithium gallate (LiGaO{sub 2}) substrates. X-ray diffraction measurements performed on ZnSnN{sub 2} films deposited on LiGaO{sub 2} substrates show evidence of single-crystal, phase-pure orthorhombic structure in the Pn2{sub 1}a symmetry [space group (33)], with lattice parameters in good agreement with theoretically predicted values. This Pn2{sub 1}a symmetry is imposed on the ZnSnN{sub 2} films by the LiGaO{sub 2} substrate, which also has orthorhombic symmetry. A structural change from the wurtzite phase to the orthorhombic phase in films grown at high substrate temperatures ∼550°C and low values of nitrogen flux ∼10{sup −5} Torr is observed in ZnSnN{sub 2} films deposited on YSZ characterized by lattice contraction in the basal plane and a 5.7% expansion of the out-of-plane lattice parameter.},

  doi          = {10.1063/1.4960109},

  journal      = {AIP Advances},

  number       = 7,

  volume       = 6,

  place        = {United States},

  year         = {Fri Jul 15 00:00:00 EDT 2016},

  month        = {Fri Jul 15 00:00:00 EDT 2016}

}

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DOI: 10.1063/1.4960109

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Stabilization of orthorhombic phase in single-crystal ZnSnN ₂ films

Senabulya, Nancy ; Feldberg, Nathaniel ; Makin, Robert. A. ; ... - AIP Advances

Here, we report on the crystal structure of epitaxial ZnSnN ₂ films synthesized via plasma-assisted vapor deposition on (111) yttria stabilized zirconia (YSZ) and (001) lithium gallate (LiGaO ₂) substrates. X-ray diffraction measurements performed on ZnSnN ₂ films deposited on LiGaO ₂ substrates show evidence of single-crystal, phase-pure orthorhombic structure in the Pn2 ₁a symmetry [space group (33)], with lattice parameters in good agreement with theoretically predicted values. This Pn2 ₁a symmetry is imposed on the ZnSnN ₂ films by the LiGaO ₂ substrate, which also has orthorhombic symmetry. A structural change from the wurtzite phase to the orthorhombic phasemore »« less
Cited by 14
DOI: 10.1063/1.4960109
Stabilization of orthorhombic phase in single-crystal ZnSnN ₂ films

Senabulya, Nancy ; Feldberg, Nathaniel ; Makin, Robert. A. ; ... - AIP Advances

Here, we report on the crystal structure of epitaxial ZnSnN ₂ films synthesized via plasma-assisted vapor deposition on (111) yttria stabilized zirconia (YSZ) and (001) lithium gallate (LiGaO ₂) substrates. X-ray diffraction measurements performed on ZnSnN ₂ films deposited on LiGaO ₂ substrates show evidence of single-crystal, phase-pure orthorhombic structure in the Pn2 ₁a symmetry [space group (33)], with lattice parameters in good agreement with theoretically predicted values. This Pn2 ₁a symmetry is imposed on the ZnSnN ₂ films by the LiGaO ₂ substrate, which also has orthorhombic symmetry. A structural change from the wurtzite phase to the orthorhombic phasemore »« less
Cited by 14
DOI: 10.1063/1.4960109

Full Text Available
Stabilization of orthorhombic phase in single-crystal ZnSnN ₂ films

Senabulya, Nancy ; Feldberg, Nathaniel ; Makin, Robert. A. ; ... - AIP Advances
Cited by 14
DOI: 10.1063/1.4960109
Semiconducting ZnSnN{sub 2} thin films for Si/ZnSnN{sub 2} p-n junctions

Qin, Ruifeng ; Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, and Key Laboratory of Additive Manufacturing Materials of Zhejiang Province, Ningbo 315201 ; Cao, Hongtao ; ... - Applied Physics Letters

ZnSnN{sub 2} is regarded as a promising photovoltaic absorber candidate due to earth-abundance, non-toxicity, and high absorption coefficient. However, it is still a great challenge to synthesize ZnSnN{sub 2} films with a low electron concentration, in order to promote the applications of ZnSnN{sub 2} as the core active layer in optoelectronic devices. In this work, polycrystalline and high resistance ZnSnN{sub 2} films were fabricated by magnetron sputtering technique, then semiconducting films were achieved after post-annealing, and finally Si/ZnSnN{sub 2} p-n junctions were constructed. The electron concentration and Hall mobility were enhanced from 2.77 × 10{sup 17} to 6.78 × 10{sup 17 }cm{sup −3} and frommore »« less
DOI: 10.1063/1.4945728
Resistance measurements and oxygen out-diffusion near the orthorhombic-tetragonal phase transformation in single-crystal YBa sub 2 Cu sub 3 O sub 7 minus. delta

LaGraff, J.R. ; Han, P.D. ; Payne, D.A. - Physical Review, B: Condensed Matter; (USA)

Isothermal resistance measurements and hot-stage optical microscopy were used to simultaneously follow the loss of oxygen and the disappearance of the twin structure in single-crystal YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} from 590--720{degree}C. Oxygen out-diffusion was found to follow surface-reaction-limited conditions with an activation energy of 1.2{plus minus}0.1 eV. Although the crystal was driven through the orthorhombic-tetragonal phase transformation during the isothermal anneals, no anomalous resistance behavior was observed. This suggests that previous observations of anomalous resistance behavior in bulk ceramics may not be intrinsic to YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}}. The difference between oxygen in-diffusion and out-diffusion kinetics is discussed in relationmore »« less
DOI: 10.1103/PhysRevB.43.441