Stabilization of orthorhombic phase in single-crystal ZnSnN{sub 2} films

doi:10.1063/1.4960109

Title: Stabilization of orthorhombic phase in single-crystal ZnSnN{sub 2} films

Full Record
Other Related Research

Abstract

We report on the crystal structure of epitaxial ZnSnN{sub 2} films synthesized via plasma-assisted vapor deposition on (111) yttria stabilized zirconia (YSZ) and (001) lithium gallate (LiGaO{sub 2}) substrates. X-ray diffraction measurements performed on ZnSnN{sub 2} films deposited on LiGaO{sub 2} substrates show evidence of single-crystal, phase-pure orthorhombic structure in the Pn2{sub 1}a symmetry [space group (33)], with lattice parameters in good agreement with theoretically predicted values. This Pn2{sub 1}a symmetry is imposed on the ZnSnN{sub 2} films by the LiGaO{sub 2} substrate, which also has orthorhombic symmetry. A structural change from the wurtzite phase to the orthorhombic phase in films grown at high substrate temperatures ∼550°C and low values of nitrogen flux ∼10{sup −5} Torr is observed in ZnSnN{sub 2} films deposited on YSZ characterized by lattice contraction in the basal plane and a 5.7% expansion of the out-of-plane lattice parameter.

Authors:

Senabulya, Nancy; Jones, Christina M.; Mathis, James ^[1]; Feldberg, Nathaniel ^[2]; Makin, Robert A.; Durbin, Steven M. ^[3]; Yang, Yongsoo ^[4]; Shi, Guangsha; Kioupakis, Emmanouil ^[5]; Clarke, Roy ^[1]; Department of Physics, University of Michigan, Ann Arbor, Michigan 48109 ^[6]

Applied Physics Program, University of Michigan, Ann Arbor, Michigan 48109 (United States)
Department of Physics, University at Buffalo, Buffalo, New York 14260 (United States)
Department of Electrical and Computer Engineering, Western Michigan University, Kalamazoo, Michigan, 49008-5329 (United States)
Department of Physics, University of Michigan, Ann Arbor, Michigan 48109 (United States)
Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States)
(United States)

Publication Date:: Fri Jul 15 00:00:00 EDT 2016

OSTI Identifier:: 22611441

Resource Type:: Journal Article

Resource Relation:: Journal Name: AIP Advances; Journal Volume: 6; Journal Issue: 7; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)

Country of Publication:: United States

Language:: English

Subject:: 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CONTRACTION; CRYSTAL STRUCTURE; DEPOSITION; EPITAXY; FILMS; GALLIUM COMPOUNDS; LATTICE PARAMETERS; LITHIUM COMPOUNDS; MONOCRYSTALS; NITROGEN COMPOUNDS; ORTHORHOMBIC LATTICES; SPACE GROUPS; STABILIZATION; SUBSTRATES; TIN COMPOUNDS; X-RAY DIFFRACTION; YTTRIUM OXIDES; ZINC COMPOUNDS; ZIRCONIUM OXIDES

Citation Formats


                    Senabulya, Nancy, Jones, Christina M., Mathis, James, Feldberg, Nathaniel, Makin, Robert A., Durbin, Steven M., Yang, Yongsoo, Shi, Guangsha, Kioupakis, Emmanouil, Clarke, Roy, and Department of Physics, University of Michigan, Ann Arbor, Michigan 48109. Stabilization of orthorhombic phase in single-crystal ZnSnN{sub 2} films.  United States: N. p., 2016. 
        Web.  doi:10.1063/1.4960109.

Copy to clipboard


                    Senabulya, Nancy, Jones, Christina M., Mathis, James, Feldberg, Nathaniel, Makin, Robert A., Durbin, Steven M., Yang, Yongsoo, Shi, Guangsha, Kioupakis, Emmanouil, Clarke, Roy, & Department of Physics, University of Michigan, Ann Arbor, Michigan 48109. Stabilization of orthorhombic phase in single-crystal ZnSnN{sub 2} films.  United States.  doi:10.1063/1.4960109.

Copy to clipboard


                    Senabulya, Nancy, Jones, Christina M., Mathis, James, Feldberg, Nathaniel, Makin, Robert A., Durbin, Steven M., Yang, Yongsoo, Shi, Guangsha, Kioupakis, Emmanouil, Clarke, Roy, and Department of Physics, University of Michigan, Ann Arbor, Michigan 48109. Fri .  
        "Stabilization of orthorhombic phase in single-crystal ZnSnN{sub 2} films".  United States.  
        doi:10.1063/1.4960109.

Copy to clipboard


                    
@article{osti_22611441,

  title        = {Stabilization of orthorhombic phase in single-crystal ZnSnN{sub 2} films},

  author       = {Senabulya, Nancy and Jones, Christina M. and Mathis, James and Feldberg, Nathaniel and Makin, Robert A. and Durbin, Steven M. and Yang, Yongsoo and Shi, Guangsha and Kioupakis, Emmanouil and Clarke, Roy and Department of Physics, University of Michigan, Ann Arbor, Michigan 48109},

  abstractNote = {We report on the crystal structure of epitaxial ZnSnN{sub 2} films synthesized via plasma-assisted vapor deposition on (111) yttria stabilized zirconia (YSZ) and (001) lithium gallate (LiGaO{sub 2}) substrates. X-ray diffraction measurements performed on ZnSnN{sub 2} films deposited on LiGaO{sub 2} substrates show evidence of single-crystal, phase-pure orthorhombic structure in the Pn2{sub 1}a symmetry [space group (33)], with lattice parameters in good agreement with theoretically predicted values. This Pn2{sub 1}a symmetry is imposed on the ZnSnN{sub 2} films by the LiGaO{sub 2} substrate, which also has orthorhombic symmetry. A structural change from the wurtzite phase to the orthorhombic phase in films grown at high substrate temperatures ∼550°C and low values of nitrogen flux ∼10{sup −5} Torr is observed in ZnSnN{sub 2} films deposited on YSZ characterized by lattice contraction in the basal plane and a 5.7% expansion of the out-of-plane lattice parameter.},

  doi          = {10.1063/1.4960109},

  journal      = {AIP Advances},

  number       = 7,

  volume       = 6,

  place        = {United States},

  year         = {Fri Jul 15 00:00:00 EDT 2016},

  month        = {Fri Jul 15 00:00:00 EDT 2016}

}

Copy to clipboard

Journal Article:

DOI: 10.1063/1.4960109

Other availability

Find in Google Scholar

Search WorldCat to find libraries that may hold this journal

Save / Share:

Export Metadata

Save to My Library

Similar records in OSTI.GOV collections:

Stabilization of orthorhombic phase in single-crystal ZnSnN ₂ films

Journal Article Senabulya, Nancy ; Feldberg, Nathaniel ; Makin, Robert. A. ; ... - AIP Advances

Here, we report on the crystal structure of epitaxial ZnSnN ₂ films synthesized via plasma-assisted vapor deposition on (111) yttria stabilized zirconia (YSZ) and (001) lithium gallate (LiGaO ₂) substrates. X-ray diffraction measurements performed on ZnSnN ₂ films deposited on LiGaO ₂ substrates show evidence of single-crystal, phase-pure orthorhombic structure in the Pn2 ₁a symmetry [space group (33)], with lattice parameters in good agreement with theoretically predicted values. This Pn2 ₁a symmetry is imposed on the ZnSnN ₂ films by the LiGaO ₂ substrate, which also has orthorhombic symmetry. A structural change from the wurtzite phase to the orthorhombic phasemore »« less
Cited by 14
DOI: 10.1063/1.4960109
Stabilization of orthorhombic phase in single-crystal ZnSnN ₂ films

Journal Article Senabulya, Nancy ; Feldberg, Nathaniel ; Makin, Robert. A. ; ... - AIP Advances

Here, we report on the crystal structure of epitaxial ZnSnN ₂ films synthesized via plasma-assisted vapor deposition on (111) yttria stabilized zirconia (YSZ) and (001) lithium gallate (LiGaO ₂) substrates. X-ray diffraction measurements performed on ZnSnN ₂ films deposited on LiGaO ₂ substrates show evidence of single-crystal, phase-pure orthorhombic structure in the Pn2 ₁a symmetry [space group (33)], with lattice parameters in good agreement with theoretically predicted values. This Pn2 ₁a symmetry is imposed on the ZnSnN ₂ films by the LiGaO ₂ substrate, which also has orthorhombic symmetry. A structural change from the wurtzite phase to the orthorhombic phasemore »« less
Cited by 14
DOI: 10.1063/1.4960109

Full Text Available
Stabilization of orthorhombic phase in single-crystal ZnSnN ₂ films

Journal Article Senabulya, Nancy ; Feldberg, Nathaniel ; Makin, Robert. A. ; ... - AIP Advances
Cited by 14
DOI: 10.1063/1.4960109
Semiconducting ZnSnN{sub 2} thin films for Si/ZnSnN{sub 2} p-n junctions

Journal Article Qin, Ruifeng ; Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, and Key Laboratory of Additive Manufacturing Materials of Zhejiang Province, Ningbo 315201 ; Cao, Hongtao ; ... - Applied Physics Letters

ZnSnN{sub 2} is regarded as a promising photovoltaic absorber candidate due to earth-abundance, non-toxicity, and high absorption coefficient. However, it is still a great challenge to synthesize ZnSnN{sub 2} films with a low electron concentration, in order to promote the applications of ZnSnN{sub 2} as the core active layer in optoelectronic devices. In this work, polycrystalline and high resistance ZnSnN{sub 2} films were fabricated by magnetron sputtering technique, then semiconducting films were achieved after post-annealing, and finally Si/ZnSnN{sub 2} p-n junctions were constructed. The electron concentration and Hall mobility were enhanced from 2.77 × 10{sup 17} to 6.78 × 10{sup 17 }cm{sup −3} and frommore »« less
DOI: 10.1063/1.4945728
Formation of (111) orientation-controlled ferroelectric orthorhombic HfO{sub 2} thin films from solid phase via annealing

Journal Article Mimura, Takanori ; Katayama, Kiliha ; Shimizu, Takao ; ... - Applied Physics Letters

0.07YO{sub 1.5}-0.93HfO{sub 2} (YHO7) films were prepared on various substrates by pulse laser deposition at room temperature and subsequent heat treatment to enable a solid phase reaction. (111)-oriented 10 wt. % Sn-doped In{sub 2}O{sub 3}(ITO)//(111) yttria-stabilized zirconia, (111)Pt/TiO{sub x}/SiO{sub 2}/(001)Si substrates, and (111)ITO/(111)Pt/TiO{sub x}/SiO{sub 2}/(001)Si substrates were employed for film growth. In this study, X-ray diffraction measurements including θ–2θ measurements, reciprocal space mappings, and pole figure measurements were used to study the films. The film on (111)ITO//(111)yttria-stabilized zirconia was an (111)-orientated epitaxial film with ferroelectric orthorhombic phase; the film on (111)ITO/(111)Pt/TiO{sub x}/SiO{sub 2}/(001)Si was an (111)-oriented uniaxial textured film with ferroelectricmore »« less
DOI: 10.1063/1.4960461

Similar Records