Dual-Gate Velocity-Modulated Transistor Based on Black Phosphorus
- Authors:
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1256383
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Physical Review Applied
- Additional Journal Information:
- Journal Name: Physical Review Applied Journal Volume: 5 Journal Issue: 6; Journal ID: ISSN 2331-7019
- Publisher:
- American Physical Society
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Tayari, V., Hemsworth, N., Cyr-Choinière, O., Dickerson, W., Gervais, G., and Szkopek, T. Dual-Gate Velocity-Modulated Transistor Based on Black Phosphorus. United States: N. p., 2016.
Web. doi:10.1103/PhysRevApplied.5.064004.
Tayari, V., Hemsworth, N., Cyr-Choinière, O., Dickerson, W., Gervais, G., & Szkopek, T. Dual-Gate Velocity-Modulated Transistor Based on Black Phosphorus. United States. https://doi.org/10.1103/PhysRevApplied.5.064004
Tayari, V., Hemsworth, N., Cyr-Choinière, O., Dickerson, W., Gervais, G., and Szkopek, T. Thu .
"Dual-Gate Velocity-Modulated Transistor Based on Black Phosphorus". United States. https://doi.org/10.1103/PhysRevApplied.5.064004.
@article{osti_1256383,
title = {Dual-Gate Velocity-Modulated Transistor Based on Black Phosphorus},
author = {Tayari, V. and Hemsworth, N. and Cyr-Choinière, O. and Dickerson, W. and Gervais, G. and Szkopek, T.},
abstractNote = {},
doi = {10.1103/PhysRevApplied.5.064004},
journal = {Physical Review Applied},
number = 6,
volume = 5,
place = {United States},
year = {Thu Jun 09 00:00:00 EDT 2016},
month = {Thu Jun 09 00:00:00 EDT 2016}
}
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1103/PhysRevApplied.5.064004
https://doi.org/10.1103/PhysRevApplied.5.064004
Other availability
Cited by: 17 works
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