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Title: Dual-Gate Velocity-Modulated Transistor Based on Black Phosphorus

Authors:
; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1256383
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review Applied
Additional Journal Information:
Journal Name: Physical Review Applied Journal Volume: 5 Journal Issue: 6; Journal ID: ISSN 2331-7019
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Tayari, V., Hemsworth, N., Cyr-Choinière, O., Dickerson, W., Gervais, G., and Szkopek, T. Dual-Gate Velocity-Modulated Transistor Based on Black Phosphorus. United States: N. p., 2016. Web. doi:10.1103/PhysRevApplied.5.064004.
Tayari, V., Hemsworth, N., Cyr-Choinière, O., Dickerson, W., Gervais, G., & Szkopek, T. Dual-Gate Velocity-Modulated Transistor Based on Black Phosphorus. United States. doi:10.1103/PhysRevApplied.5.064004.
Tayari, V., Hemsworth, N., Cyr-Choinière, O., Dickerson, W., Gervais, G., and Szkopek, T. Thu . "Dual-Gate Velocity-Modulated Transistor Based on Black Phosphorus". United States. doi:10.1103/PhysRevApplied.5.064004.
@article{osti_1256383,
title = {Dual-Gate Velocity-Modulated Transistor Based on Black Phosphorus},
author = {Tayari, V. and Hemsworth, N. and Cyr-Choinière, O. and Dickerson, W. and Gervais, G. and Szkopek, T.},
abstractNote = {},
doi = {10.1103/PhysRevApplied.5.064004},
journal = {Physical Review Applied},
number = 6,
volume = 5,
place = {United States},
year = {2016},
month = {6}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevApplied.5.064004

Citation Metrics:
Cited by: 4 works
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