Dual-Gate Velocity-Modulated Transistor Based on Black Phosphorus

doi:10.1103/PhysRevApplied.5.064004

Title: Dual-Gate Velocity-Modulated Transistor Based on Black Phosphorus

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Authors:: Tayari, V.; Hemsworth, N.; Cyr-Choinière, O.; Dickerson, W.; Gervais, G.; Szkopek, T.

Publication Date:: 2016-06-09

Sponsoring Org.:: USDOE

OSTI Identifier:: 1256383

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Physical Review Applied

Additional Journal Information:: Journal Name: Physical Review Applied Journal Volume: 5 Journal Issue: 6; Journal ID: ISSN 2331-7019

Publisher:: American Physical Society

Country of Publication:: United States

Language:: English

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                    Tayari, V., Hemsworth, N., Cyr-Choinière, O., Dickerson, W., Gervais, G., and Szkopek, T. Dual-Gate Velocity-Modulated Transistor Based on Black Phosphorus.  United States: N. p., 2016. 
        Web.  doi:10.1103/PhysRevApplied.5.064004.

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                    Tayari, V., Hemsworth, N., Cyr-Choinière, O., Dickerson, W., Gervais, G., & Szkopek, T. Dual-Gate Velocity-Modulated Transistor Based on Black Phosphorus.  United States.  doi:10.1103/PhysRevApplied.5.064004.

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                    Tayari, V., Hemsworth, N., Cyr-Choinière, O., Dickerson, W., Gervais, G., and Szkopek, T. Thu .  
        "Dual-Gate Velocity-Modulated Transistor Based on Black Phosphorus".  United States.  doi:10.1103/PhysRevApplied.5.064004.

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@article{osti_1256383,

  title        = {Dual-Gate Velocity-Modulated Transistor Based on Black Phosphorus},

  author       = {Tayari, V. and Hemsworth, N. and Cyr-Choinière, O. and Dickerson, W. and Gervais, G. and Szkopek, T.},

  abstractNote = {},

  doi          = {10.1103/PhysRevApplied.5.064004},

  journal      = {Physical Review Applied},

  number       = 6,

  volume       = 5,

  place        = {United States},

  year         = {2016},

  month        = {6}

}

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DOI: 10.1103/PhysRevApplied.5.064004

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