skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Dual Gate Thin Film Transistors Based on Indium Oxide Active Layers

Abstract

Polycrystalline Indium Oxide (In{sub 2}O{sub 3}) thin films were employed as an active channel layer for the fabrication of bottom and top gate thin film transistors. While conventional SiO{sub 2} served as a bottom gate dielectric, cross-linked poly-4-vinylphenol (PVP) was used a top gate dielectric. These nano-crystalline TFTs exhibited n-channel behavior with their transport behavior highly dependent on the thickness of the channel. The correlation between the thickness of the active layer and TFT parameters such as on/off ratio, field-effect mobility, threshold voltage were carried out. The optical spectra revealed a high transmittance in the entire visible region, thus making them promising candidates for the display technology.

Authors:
; ;  [1];  [2]
  1. Department of Physics, Manipal Institute of Technology, Manipal University, Manipal 576 104 (India)
  2. Research Center for Applied Sciences, Academia Sinica, Taipei, Taiwan (China)
Publication Date:
OSTI Identifier:
21608124
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1349; Journal Issue: 1; Conference: 55. DAE solid state physics symposium 2010, Manipal (India), 26-30 Dec 2010; Other Information: DOI: 10.1063/1.3606237; (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; ABSORPTION SPECTRA; CHANNELING; CORRELATIONS; DIELECTRIC MATERIALS; DISPLAY DEVICES; ELECTRIC POTENTIAL; INDIUM OXIDES; LAYERS; MOBILITY; NANOSTRUCTURES; POLYCRYSTALS; PVP; SILICA; SILICON OXIDES; THIN FILMS; TRANSISTORS; AMIDES; AZOLES; BLOOD SUBSTITUTES; CHALCOGENIDES; COMPUTER OUTPUT DEVICES; COMPUTER-GRAPHICS DEVICES; CRYSTALS; DRUGS; FILMS; HEMATOLOGIC AGENTS; HETEROCYCLIC COMPOUNDS; INDIUM COMPOUNDS; LACTAMS; MATERIALS; MINERALS; ORGANIC COMPOUNDS; ORGANIC NITROGEN COMPOUNDS; ORGANIC POLYMERS; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; POLYMERS; POLYVINYLS; PYRROLES; PYRROLIDONES; SEMICONDUCTOR DEVICES; SILICON COMPOUNDS; SPECTRA

Citation Formats

Kekuda, Dhananjaya, Rao, K. Mohan, Tolpadi, Amita, and Chu, C. W. Dual Gate Thin Film Transistors Based on Indium Oxide Active Layers. United States: N. p., 2011. Web. doi:10.1063/1.3606237.
Kekuda, Dhananjaya, Rao, K. Mohan, Tolpadi, Amita, & Chu, C. W. Dual Gate Thin Film Transistors Based on Indium Oxide Active Layers. United States. doi:10.1063/1.3606237.
Kekuda, Dhananjaya, Rao, K. Mohan, Tolpadi, Amita, and Chu, C. W. Fri . "Dual Gate Thin Film Transistors Based on Indium Oxide Active Layers". United States. doi:10.1063/1.3606237.
@article{osti_21608124,
title = {Dual Gate Thin Film Transistors Based on Indium Oxide Active Layers},
author = {Kekuda, Dhananjaya and Rao, K. Mohan and Tolpadi, Amita and Chu, C. W.},
abstractNote = {Polycrystalline Indium Oxide (In{sub 2}O{sub 3}) thin films were employed as an active channel layer for the fabrication of bottom and top gate thin film transistors. While conventional SiO{sub 2} served as a bottom gate dielectric, cross-linked poly-4-vinylphenol (PVP) was used a top gate dielectric. These nano-crystalline TFTs exhibited n-channel behavior with their transport behavior highly dependent on the thickness of the channel. The correlation between the thickness of the active layer and TFT parameters such as on/off ratio, field-effect mobility, threshold voltage were carried out. The optical spectra revealed a high transmittance in the entire visible region, thus making them promising candidates for the display technology.},
doi = {10.1063/1.3606237},
journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1349,
place = {United States},
year = {2011},
month = {7}
}