skip to main content

DOE PAGESDOE PAGES

Title: A small signal amplifier based on ionic liquid gated black phosphorous field effect transistor

In this article we report an analog small signal amplifier based on semiconducting black phosphorus (BP), the most recent addition to the family of two dimensional crystals. The amplifier, consisting of a BP load resistor and a BP field effect transistor (FET) was integrated on a single flake. The gain of the amplifier was found to be ~9 and it remained undistorted for input signal frequencies up to 15 kHz. In addition, we also report record high ON current of 200 µA/µm at V DD = -0.5V in BP FETs. Our results demonstrates the possibility for the implementation of BP in the future generations of analog devices.
Authors:
 [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1]
  1. Argonne National Lab. (ANL), Lemont, IL (United States)
Publication Date:
Grant/Contract Number:
AC02-06CH11357
Type:
Accepted Manuscript
Journal Name:
IEEE Electron Device Letters
Additional Journal Information:
Journal Volume: 36; Journal Issue: 6; Journal ID: ISSN 0741-3106
Publisher:
IEEE
Research Org:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org:
Argonne National Laboratory; USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; amplifier; black phosphorus; field effect transistor; frequency response; gain
OSTI Identifier:
1354803