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Title: On trapping mechanisms at oxide-traps in Al2O3/GaN metal-oxide-semiconductor capacitors

Authors:
 [1];  [2];  [3]; ORCiD logo [3];  [3];  [1]; ORCiD logo [1];  [1];  [3]
  1. Department of Information Engineering, University of Padova, Via Gradenigo 6/B, Padova 35131, Italy
  2. Materials Department, University of California, Santa Barbara, California 93106, USA
  3. Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA
Publication Date:
Sponsoring Org.:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
OSTI Identifier:
1242325
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 108 Journal Issue: 11; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Bisi, D., Chan, S. H., Liu, X., Yeluri, R., Keller, S., Meneghini, M., Meneghesso, G., Zanoni, E., and Mishra, U. K. On trapping mechanisms at oxide-traps in Al2O3/GaN metal-oxide-semiconductor capacitors. United States: N. p., 2016. Web. doi:10.1063/1.4944466.
Bisi, D., Chan, S. H., Liu, X., Yeluri, R., Keller, S., Meneghini, M., Meneghesso, G., Zanoni, E., & Mishra, U. K. On trapping mechanisms at oxide-traps in Al2O3/GaN metal-oxide-semiconductor capacitors. United States. doi:10.1063/1.4944466.
Bisi, D., Chan, S. H., Liu, X., Yeluri, R., Keller, S., Meneghini, M., Meneghesso, G., Zanoni, E., and Mishra, U. K. Thu . "On trapping mechanisms at oxide-traps in Al2O3/GaN metal-oxide-semiconductor capacitors". United States. doi:10.1063/1.4944466.
@article{osti_1242325,
title = {On trapping mechanisms at oxide-traps in Al2O3/GaN metal-oxide-semiconductor capacitors},
author = {Bisi, D. and Chan, S. H. and Liu, X. and Yeluri, R. and Keller, S. and Meneghini, M. and Meneghesso, G. and Zanoni, E. and Mishra, U. K.},
abstractNote = {},
doi = {10.1063/1.4944466},
journal = {Applied Physics Letters},
number = 11,
volume = 108,
place = {United States},
year = {2016},
month = {3}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1063/1.4944466

Citation Metrics:
Cited by: 8 works
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Works referenced in this record:

Modeling of SILC based on electron and hole tunneling. I. Transient effects
journal, June 2000

  • Ielmini, D.; Spinelli, A. S.; Rigamonti, M. A.
  • IEEE Transactions on Electron Devices, Vol. 47, Issue 6
  • DOI: 10.1109/16.842971

Electrical Characterization of Gate Traps in FETs With Ge and III–V Channels
journal, December 2013

  • Sun, Xiao; Ma, T. P.
  • IEEE Transactions on Device and Materials Reliability, Vol. 13, Issue 4
  • DOI: 10.1109/TDMR.2013.2276755

Electrical and structural characterizations of crystallized Al 2 O 3 /GaN interfaces formed by in situ metalorganic chemical vapor deposition
journal, January 2016

  • Liu, X.; Jackson, C. M.; Wu, F.
  • Journal of Applied Physics, Vol. 119, Issue 1
  • DOI: 10.1063/1.4939157

Native point defects and dangling bonds in α-Al 2 O 3
journal, January 2013

  • Choi, Minseok; Janotti, Anderson; Van de Walle, Chris G.
  • Journal of Applied Physics, Vol. 113, Issue 4
  • DOI: 10.1063/1.4784114

Band offsets of high K gate oxides on III-V semiconductors
journal, July 2006

  • Robertson, J.; Falabretti, B.
  • Journal of Applied Physics, Vol. 100, Issue 1
  • DOI: 10.1063/1.2213170

Comparison of Methods for Accurate Characterization of Interface Traps in GaN MOS-HFET Devices
journal, February 2015

  • Ramanan, Narayanan; Lee, Bongmook; Misra, Veena
  • IEEE Transactions on Electron Devices, Vol. 62, Issue 2
  • DOI: 10.1109/TED.2014.2382677

A Distributed Model for Border Traps in $\hbox{Al}_{2} \hbox{O}_{3}-\hbox{InGaAs}$ MOS Devices
journal, April 2011


Impact of carbon and nitrogen impurities in high-κ dielectrics on metal-oxide-semiconductor devices
journal, April 2013

  • Choi, Minseok; Lyons, John L.; Janotti, Anderson
  • Applied Physics Letters, Vol. 102, Issue 14
  • DOI: 10.1063/1.4801497

Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors
journal, August 2015

  • Wu, Tian-Li; Marcon, Denis; Bakeroot, Benoit
  • Applied Physics Letters, Vol. 107, Issue 9
  • DOI: 10.1063/1.4930076

Characterization of electronic states at insulator/(Al)GaN interfaces for improved insulated gate and surface passivation structures of GaN-based transistors
journal, September 2014

  • Yatabe, Zenji; Hori, Yujin; Ma, Wan-Cheng
  • Japanese Journal of Applied Physics, Vol. 53, Issue 10
  • DOI: 10.7567/JJAP.53.100213

A Study of Relaxation Current in High-<tex>$kappa$</tex>Dielectric Stacks
journal, March 2004

  • Xu, Z.; Pantisano, L.; Kerber, A.
  • IEEE Transactions on Electron Devices, Vol. 51, Issue 3
  • DOI: 10.1109/TED.2003.822343

Correlation of stress-induced leakage current in thin oxides with trap generation inside the oxides
journal, May 1993

  • Dumin, D. J.; Maddux, J. R.
  • IEEE Transactions on Electron Devices, Vol. 40, Issue 5
  • DOI: 10.1109/16.210209

Positive-bias temperature instability (PBTI) of GaN MOSFETs
conference, April 2015


Dielectric stress tests and capacitance-voltage analysis to evaluate the effect of post deposition annealing on Al 2 O 3 films deposited on GaN
journal, December 2014

  • Yeluri, Ramya; Liu, Xiang; Guidry, Matthew
  • Applied Physics Letters, Vol. 105, Issue 22
  • DOI: 10.1063/1.4903344

Capacitance-voltage characterization of interfaces between positive valence band offset dielectrics and wide bandgap semiconductors
journal, August 2013

  • Yeluri, Ramya; Liu, Xiang; Swenson, Brian L.
  • Journal of Applied Physics, Vol. 114, Issue 8
  • DOI: 10.1063/1.4819402

GaN Power Transistors on Si Substrates for Switching Applications
journal, July 2010