On trapping mechanisms at oxide-traps in Al2O3/GaN metal-oxide-semiconductor capacitors

Bisi, D.; Chan, S. H.; Liu, X.; Yeluri, R.; Keller, S.; Meneghini, M.; Meneghesso, G.; Zanoni, E.; Mishra, U. K.

doi:10.1063/1.4944466

Title: On trapping mechanisms at oxide-traps in Al2O3/GaN metal-oxide-semiconductor capacitors

Authors:

Bisi, D. ^[1]; Chan, S. H. ^[2]; Liu, X. ^[3];

^[3]; Keller, S. ^[3]; Meneghini, M. ^[1];

^[1]; Zanoni, E. ^[1]; Mishra, U. K. ^[3]

Department of Information Engineering, University of Padova, Via Gradenigo 6/B, Padova 35131, Italy
Materials Department, University of California, Santa Barbara, California 93106, USA
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA

Publication Date:: Thu Mar 17 00:00:00 EDT 2016

Sponsoring Org.:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

OSTI Identifier:: 1242325

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Name: Applied Physics Letters Journal Volume: 108 Journal Issue: 11; Journal ID: ISSN 0003-6951

Publisher:: American Institute of Physics

Country of Publication:: United States

Language:: English

Citation Formats


                    Bisi, D., Chan, S. H., Liu, X., Yeluri, R., Keller, S., Meneghini, M., Meneghesso, G., Zanoni, E., and Mishra, U. K. On trapping mechanisms at oxide-traps in Al2O3/GaN metal-oxide-semiconductor capacitors.  United States: N. p., 2016. 
Web.  doi:10.1063/1.4944466.

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                    Bisi, D., Chan, S. H., Liu, X., Yeluri, R., Keller, S., Meneghini, M., Meneghesso, G., Zanoni, E., & Mishra, U. K. On trapping mechanisms at oxide-traps in Al2O3/GaN metal-oxide-semiconductor capacitors.  United States.  https://doi.org/10.1063/1.4944466

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                    Bisi, D., Chan, S. H., Liu, X., Yeluri, R., Keller, S., Meneghini, M., Meneghesso, G., Zanoni, E., and Mishra, U. K. Thu .  
"On trapping mechanisms at oxide-traps in Al2O3/GaN metal-oxide-semiconductor capacitors".  United States.  https://doi.org/10.1063/1.4944466.

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@article{osti_1242325,

  title        = {On trapping mechanisms at oxide-traps in Al2O3/GaN metal-oxide-semiconductor capacitors},

  author       = {Bisi, D. and Chan, S. H. and Liu, X. and Yeluri, R. and Keller, S. and Meneghini, M. and Meneghesso, G. and Zanoni, E. and Mishra, U. K.},

  abstractNote = {},

  doi          = {10.1063/1.4944466},

  journal      = {Applied Physics Letters},

  number       = 11,

  volume       = 108,

  place        = {United States},

  year         = {Thu Mar 17 00:00:00 EDT 2016},

  month        = {Thu Mar 17 00:00:00 EDT 2016}

}

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Title: On trapping mechanisms at oxide-traps in Al2O3/GaN metal-oxide-semiconductor capacitors

Citation Formats

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Modeling of SILC based on electron and hole tunneling. I. Transient effects
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Role of the dielectric for the charging dynamics of the dielectric/barrier interface in AlGaN/GaN based metal-insulator-semiconductor structures under forward gate bias stress
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Metalorganic chemical vapor deposition of Al 2 O 3 using trimethylaluminum and O 2 precursors: Growth mechanism and crystallinity
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Gallium nitride based power switches for next generation of power conversion: GaN based power switches for next generation of power conversion
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