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Title: Interface/border trap characterization of Al{sub 2}O{sub 3}/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer

Abstract

We report the interface characterization of Al{sub 2}O{sub 3}/AlN/GaN MOS (metal-oxide-semiconductor) structures with an AlN interfacial layer. A thin monocrystal-like interfacial layer (AlN) is formed at the Al{sub 2}O{sub 3}/GaN to effectively block oxygen from the GaN surface and prevent the formation of detrimental Ga-O bonds. The suppression of Ga-O bonds is validated by X-ray photoelectron spectroscopy of the critical interface. Frequency-dispersion in C-V characteristics has been significantly reduced, owing to improved interface quality. Furthermore, using the conventional conductance method suitable for extracting the interface trap density D{sub it} in MOS structures, D{sub it} in the device with AlN was determined to be in the range of 10{sup 11}–10{sup 12 }eV{sup −1 }cm{sup −2}, showing one order of magnitude lower than that without AlN. Border traps near the gate-dielectric/GaN interface were identified and shown to be suppressed by the AlN interfacial layer as well.

Authors:
; ; ; ; ;  [1];  [2]
  1. Institute of Microelectronics, Peking University, Beijing 100871 (China)
  2. School of Physics, Peking University, Beijing 100871 (China)
Publication Date:
OSTI Identifier:
22420241
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 106; Journal Issue: 5; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 36 MATERIALS SCIENCE; ALUMINIUM NITRIDES; ALUMINIUM OXIDES; DIELECTRIC MATERIALS; ELECTRIC CONDUCTIVITY; GALLIUM NITRIDES; INTERFACES; LAYERS; METALS; OXYGEN; SEMICONDUCTOR MATERIALS; SURFACES; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats

Liu, Shenghou, Yang, Shu, Tang, Zhikai, Jiang, Qimeng, Liu, Cheng, Chen, Kevin J., E-mail: eekjchen@ust.hk, Wang, Maojun, and Shen, Bo. Interface/border trap characterization of Al{sub 2}O{sub 3}/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer. United States: N. p., 2015. Web. doi:10.1063/1.4907861.
Liu, Shenghou, Yang, Shu, Tang, Zhikai, Jiang, Qimeng, Liu, Cheng, Chen, Kevin J., E-mail: eekjchen@ust.hk, Wang, Maojun, & Shen, Bo. Interface/border trap characterization of Al{sub 2}O{sub 3}/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer. United States. https://doi.org/10.1063/1.4907861
Liu, Shenghou, Yang, Shu, Tang, Zhikai, Jiang, Qimeng, Liu, Cheng, Chen, Kevin J., E-mail: eekjchen@ust.hk, Wang, Maojun, and Shen, Bo. Mon . "Interface/border trap characterization of Al{sub 2}O{sub 3}/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer". United States. https://doi.org/10.1063/1.4907861.
@article{osti_22420241,
title = {Interface/border trap characterization of Al{sub 2}O{sub 3}/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer},
author = {Liu, Shenghou and Yang, Shu and Tang, Zhikai and Jiang, Qimeng and Liu, Cheng and Chen, Kevin J., E-mail: eekjchen@ust.hk and Wang, Maojun and Shen, Bo},
abstractNote = {We report the interface characterization of Al{sub 2}O{sub 3}/AlN/GaN MOS (metal-oxide-semiconductor) structures with an AlN interfacial layer. A thin monocrystal-like interfacial layer (AlN) is formed at the Al{sub 2}O{sub 3}/GaN to effectively block oxygen from the GaN surface and prevent the formation of detrimental Ga-O bonds. The suppression of Ga-O bonds is validated by X-ray photoelectron spectroscopy of the critical interface. Frequency-dispersion in C-V characteristics has been significantly reduced, owing to improved interface quality. Furthermore, using the conventional conductance method suitable for extracting the interface trap density D{sub it} in MOS structures, D{sub it} in the device with AlN was determined to be in the range of 10{sup 11}–10{sup 12 }eV{sup −1 }cm{sup −2}, showing one order of magnitude lower than that without AlN. Border traps near the gate-dielectric/GaN interface were identified and shown to be suppressed by the AlN interfacial layer as well.},
doi = {10.1063/1.4907861},
url = {https://www.osti.gov/biblio/22420241}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 5,
volume = 106,
place = {United States},
year = {2015},
month = {2}
}