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Title: Nitride passivation reduces interfacial traps in atomic-layer-deposited Al{sub 2}O{sub 3}/GaAs (001) metal-oxide-semiconductor capacitors using atmospheric metal-organic chemical vapor deposition

Abstract

Using an atmospheric metal-organic chemical vapor deposition system, we passivated GaAs with AlN prior to atomic layer deposition of Al{sub 2}O{sub 3}. This AlN passivation incorporated nitrogen at the Al{sub 2}O{sub 3}/GaAs interface, improving the capacitance-voltage (C–V) characteristics of the resultant metal-oxide-semiconductor capacitors (MOSCAPs). The C–V curves of these devices showed a remarkable reduction in the frequency dispersion of the accumulation capacitance. Using the conductance method at various temperatures, we extracted the interfacial density of states (D{sub it}). The D{sub it} was reduced over the entire GaAs band gap. In particular, these devices exhibited D{sub it} around the midgap of less than 4 × 10{sup 12} cm{sup −2}eV{sup −1}, showing that AlN passivation effectively reduced interfacial traps in the MOS structure.

Authors:
; ; ; ; ;  [1]
  1. Sumitomo Chemical Co., Ltd., IT-related Chemicals Research Laboratory, 6 Kitahara, Tsukuba, Ibaraki 300-3294 (Japan)
Publication Date:
OSTI Identifier:
22311171
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM NITRIDES; ALUMINIUM OXIDES; CAPACITANCE; CAPACITORS; CHEMICAL VAPOR DEPOSITION; DISPERSIONS; ELECTRIC POTENTIAL; GALLIUM ARSENIDES; INTERFACES; LAYERS; METALS; ORGANOMETALLIC COMPOUNDS; PASSIVATION; REDUCTION; SEMICONDUCTOR MATERIALS; SILICON OXIDES; TRAPS

Citation Formats

Aoki, T., E-mail: aokit@sc.sumitomo-chem.co.jp, Fukuhara, N., Osada, T., Sazawa, H., Hata, M., and Inoue, T. Nitride passivation reduces interfacial traps in atomic-layer-deposited Al{sub 2}O{sub 3}/GaAs (001) metal-oxide-semiconductor capacitors using atmospheric metal-organic chemical vapor deposition. United States: N. p., 2014. Web. doi:10.1063/1.4891431.
Aoki, T., E-mail: aokit@sc.sumitomo-chem.co.jp, Fukuhara, N., Osada, T., Sazawa, H., Hata, M., & Inoue, T. Nitride passivation reduces interfacial traps in atomic-layer-deposited Al{sub 2}O{sub 3}/GaAs (001) metal-oxide-semiconductor capacitors using atmospheric metal-organic chemical vapor deposition. United States. doi:10.1063/1.4891431.
Aoki, T., E-mail: aokit@sc.sumitomo-chem.co.jp, Fukuhara, N., Osada, T., Sazawa, H., Hata, M., and Inoue, T. Mon . "Nitride passivation reduces interfacial traps in atomic-layer-deposited Al{sub 2}O{sub 3}/GaAs (001) metal-oxide-semiconductor capacitors using atmospheric metal-organic chemical vapor deposition". United States. doi:10.1063/1.4891431.
@article{osti_22311171,
title = {Nitride passivation reduces interfacial traps in atomic-layer-deposited Al{sub 2}O{sub 3}/GaAs (001) metal-oxide-semiconductor capacitors using atmospheric metal-organic chemical vapor deposition},
author = {Aoki, T., E-mail: aokit@sc.sumitomo-chem.co.jp and Fukuhara, N. and Osada, T. and Sazawa, H. and Hata, M. and Inoue, T.},
abstractNote = {Using an atmospheric metal-organic chemical vapor deposition system, we passivated GaAs with AlN prior to atomic layer deposition of Al{sub 2}O{sub 3}. This AlN passivation incorporated nitrogen at the Al{sub 2}O{sub 3}/GaAs interface, improving the capacitance-voltage (C–V) characteristics of the resultant metal-oxide-semiconductor capacitors (MOSCAPs). The C–V curves of these devices showed a remarkable reduction in the frequency dispersion of the accumulation capacitance. Using the conductance method at various temperatures, we extracted the interfacial density of states (D{sub it}). The D{sub it} was reduced over the entire GaAs band gap. In particular, these devices exhibited D{sub it} around the midgap of less than 4 × 10{sup 12} cm{sup −2}eV{sup −1}, showing that AlN passivation effectively reduced interfacial traps in the MOS structure.},
doi = {10.1063/1.4891431},
journal = {Applied Physics Letters},
number = 3,
volume = 105,
place = {United States},
year = {Mon Jul 21 00:00:00 EDT 2014},
month = {Mon Jul 21 00:00:00 EDT 2014}
}