Search Menu
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information
Search Scholarly Publications

Title: Electrostatically defined silicon quantum dots with counted antimony donor implants

Authors:
 [1];  [2];  [2];  [2];  [2]; ORCiD logo [2];  [2];  [2];  [2];  [2];  [1];  [2];  [1];  [2]
+ Show Author Affiliations
  1. Sandia National Laboratories, Albuquerque, New Mexico 87185, USA, Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, New Mexico 87175, USA
  2. Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1237511
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 108 Journal Issue: 6; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Singh, M., Pacheco, J. L., Perry, D., Garratt, E., Ten Eyck, G., Bishop, N. C., Wendt, J. R., Manginell, R. P., Dominguez, J., Pluym, T., Luhman, D. R., Bielejec, E., Lilly, M. P., and Carroll, M. S. Electrostatically defined silicon quantum dots with counted antimony donor implants. United States: N. p., 2016. Web. doi:10.1063/1.4940421.
Copy to clipboard
Singh, M., Pacheco, J. L., Perry, D., Garratt, E., Ten Eyck, G., Bishop, N. C., Wendt, J. R., Manginell, R. P., Dominguez, J., Pluym, T., Luhman, D. R., Bielejec, E., Lilly, M. P., & Carroll, M. S. Electrostatically defined silicon quantum dots with counted antimony donor implants. United States. https://doi.org/10.1063/1.4940421
Copy to clipboard
Singh, M., Pacheco, J. L., Perry, D., Garratt, E., Ten Eyck, G., Bishop, N. C., Wendt, J. R., Manginell, R. P., Dominguez, J., Pluym, T., Luhman, D. R., Bielejec, E., Lilly, M. P., and Carroll, M. S. Tue . "Electrostatically defined silicon quantum dots with counted antimony donor implants". United States. https://doi.org/10.1063/1.4940421.
Copy to clipboard
@article{osti_1237511,
title = {Electrostatically defined silicon quantum dots with counted antimony donor implants},
author = {Singh, M. and Pacheco, J. L. and Perry, D. and Garratt, E. and Ten Eyck, G. and Bishop, N. C. and Wendt, J. R. and Manginell, R. P. and Dominguez, J. and Pluym, T. and Luhman, D. R. and Bielejec, E. and Lilly, M. P. and Carroll, M. S.},
abstractNote = {},
doi = {10.1063/1.4940421},
journal = {Applied Physics Letters},
number = 6,
volume = 108,
place = {United States},
year = {Tue Feb 09 00:00:00 EST 2016},
month = {Tue Feb 09 00:00:00 EST 2016}
}
Copy to clipboard
Journal Article:
Free Publicly Available Full Text
Accepted Manuscript (Publisher)
Publisher's Version of Record
https://doi.org/10.1063/1.4940421
Copyright Statement
Other availability
Search WorldCat Search WorldCat to find libraries that may hold this journal
Citation Metrics:
Cited by: 20 works
Citation information provided by
Web of Science
Save / Share:
Export Metadata
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.

Works referenced in this record:

Single-Ion Implantation for the Development of Si-Based MOSFET Devices with Quantum Functionalities
journal, January 2012

  • McCallum, Jeffrey C.; Jamieson, David N.; Yang, Changyi
  • Advances in Materials Science and Engineering, Vol. 2012
  • DOI: 10.1155/2012/272694

Annealing of surface states in polycrystalline‐silicon–gate capacitors
journal, February 1977

  • Hickmott, T. W.
  • Journal of Applied Physics, Vol. 48, Issue 2
  • DOI: 10.1063/1.323662

A silicon-based nuclear spin quantum computer
journal, May 1998

Room-Temperature Quantum Bit Storage Exceeding 39 Minutes Using Ionized Donors in Silicon-28
journal, November 2013

A single-atom electron spin qubit in silicon
journal, September 2012

  • Pla, Jarryd J.; Tan, Kuan Y.; Dehollain, Juan P.
  • Nature, Vol. 489, Issue 7417
  • DOI: 10.1038/nature11449

Electronic stopping powers for heavy ions in SiC and SiO 2
journal, January 2014

  • Jin, K.; Zhang, Y.; Zhu, Z.
  • Journal of Applied Physics, Vol. 115, Issue 4
  • DOI: 10.1063/1.4861642

A reliable method for the counting and control of single ions for single-dopant controlled devices
journal, July 2008

Electrical activation and electron spin coherence of ultralow dose antimony implants in silicon
journal, March 2006

  • Schenkel, T.; Liddle, J. A.; Persaud, A.
  • Applied Physics Letters, Vol. 88, Issue 11
  • DOI: 10.1063/1.2182068

Quantum information and computation
journal, March 2000

  • Bennett, Charles H.; DiVincenzo, David P.
  • Nature, Vol. 404, Issue 6775
  • DOI: 10.1038/35005001

Electron exchange coupling for single-donor solid-state spin qubits
journal, November 2003

Electron spin lifetime of a single antimony donor in silicon
journal, September 2013

  • Tracy, L. A.; Lu, T. M.; Bishop, N. C.
  • Applied Physics Letters, Vol. 103, Issue 14
  • DOI: 10.1063/1.4824128

Exchange in Silicon-Based Quantum Computer Architecture
journal, December 2001

Silicon planar technology for single-photon optical detectors
journal, April 2003

  • Sciacca, E.; Giudice, A. C.; Sanfilippo, D.
  • IEEE Transactions on Electron Devices, Vol. 50, Issue 4
  • DOI: 10.1109/TED.2003.812095

Single-shot readout of an electron spin in silicon
journal, September 2010

  • Morello, Andrea; Pla, Jarryd J.; Zwanenburg, Floris A.
  • Nature, Vol. 467, Issue 7316
  • DOI: 10.1038/nature09392

Room temperature single ion detection with Geiger mode avalanche diode detectors
journal, July 2008

  • Seamons, J. A.; Bielejec, E.; Carroll, M. S.
  • Applied Physics Letters, Vol. 93, Issue 4
  • DOI: 10.1063/1.2967211

Comparison between simulated and experimental Au-ion profiles implanted in nanocrystalline ceria
journal, July 2013

  • Moll, Sandra; Zhang, Yanwen; Zhu, Zihua
  • Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 307
  • DOI: 10.1016/j.nimb.2012.12.119

Controlled shallow single-ion implantation in silicon using an active substrate for sub-20‐keV ions
journal, May 2005

  • Jamieson, D. N.; Yang, C.; Hopf, T.
  • Applied Physics Letters, Vol. 86, Issue 20
  • DOI: 10.1063/1.1925320

Single ion implantation for single donor devices using Geiger mode detectors
journal, January 2010

Detection of low energy single ion impacts in micron scale transistors at room temperature
journal, November 2007

  • Batra, A.; Weis, C. D.; Reijonen, J.
  • Applied Physics Letters, Vol. 91, Issue 19
  • DOI: 10.1063/1.2805634

Electron spin coherence exceeding seconds in high-purity silicon
journal, December 2011

  • Tyryshkin, Alexei M.; Tojo, Shinichi; Morton, John J. L.
  • Nature Materials, Vol. 11, Issue 2
  • DOI: 10.1038/nmat3182
    Sort by:
    [ × clear filter / sort ]

    Similar Records in DOE PAGES and OSTI.GOV collections: