Determination of shape anisotropy in embedded low contrast submonolayer quantum dot structures

Dhomkar, S.; Vaxelaire, N.; Ji, H.; Shuvayev, V.; Tamargo, M. C.; Kuskovsky, I. L.; Noyan, I. C.

doi:10.1063/1.4938399

Title: Determination of shape anisotropy in embedded low contrast submonolayer quantum dot structures

Abstract

We describe a procedure for the morphological characterization of hard-to-image submonolayer quantum dot structures. This procedure employs high resolution x-ray diffraction based reciprocal space mapping, accompanied by rigorous diffraction modeling for precise determination of the morphology of submonolayer quantum dots. Our modelling results and experimental data clearly show that the investigated quantum dots are anisotropically elongated along the [110] orientation. Complementary polarization dependent photoluminescence measurements, combined with our previously reported magneto-photoluminescence data, confirm this conclusion. Here, our formalism enables direct extraction of structural information of complex embedded three-dimensional structures, which, due to their low electron density contrast with respect to the surrounding host matrix, cannot be readily investigated by traditional electron diffraction techniques.

Authors:

Dhomkar, S. ^[1]; Vaxelaire, N. ^[2]; Ji, H. ^[1]; Shuvayev, V. ^[3]; Tamargo, M. C. ^[4]; Kuskovsky, I. L. ^[1]; Noyan, I. C. ^[2]

Queens College of CUNY, Queens, NY (United States); CUNY, New York, NY (United States)
Columbia Univ., New York, NY (United States)
Queens College of CUNY, Queens, NY (United States)
CUNY, New York, NY (United States); City College of New York, NY (United States)

Publication Date:: Mon Dec 21 00:00:00 EST 2015

Research Org.:: Brookhaven National Lab. (BNL), Upton, NY (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division

OSTI Identifier:: 1354325

Alternate Identifier(s):: OSTI ID: 1234094

Report Number(s):: BNL-112841-2016-JA
Journal ID: ISSN 0003-6951

Grant/Contract Number:: SC00112704; SC003739; AC02-98CH10886

Resource Type:: Accepted Manuscript

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 107; Journal Issue: 25; Journal ID: ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; Quantum dots; Atomic and molecular spectra; Oscillating flow; Crystal lattices; Light diffraction; Epitaxy; High resolution X-ray diffraction; Geometrical optics; Photoluminescence spectroscopy; Electromagnetic interactions

Citation Formats


                    Dhomkar, S., Vaxelaire, N., Ji, H., Shuvayev, V., Tamargo, M. C., Kuskovsky, I. L., and Noyan, I. C. Determination of shape anisotropy in embedded low contrast submonolayer quantum dot structures.  United States: N. p., 2015. 
Web.  doi:10.1063/1.4938399.

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                    Dhomkar, S., Vaxelaire, N., Ji, H., Shuvayev, V., Tamargo, M. C., Kuskovsky, I. L., & Noyan, I. C. Determination of shape anisotropy in embedded low contrast submonolayer quantum dot structures.  United States.  https://doi.org/10.1063/1.4938399

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                    Dhomkar, S., Vaxelaire, N., Ji, H., Shuvayev, V., Tamargo, M. C., Kuskovsky, I. L., and Noyan, I. C. Mon .  
"Determination of shape anisotropy in embedded low contrast submonolayer quantum dot structures".  United States.  https://doi.org/10.1063/1.4938399.  https://www.osti.gov/servlets/purl/1354325.

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@article{osti_1354325,

  title        = {Determination of shape anisotropy in embedded low contrast submonolayer quantum dot structures},

  author       = {Dhomkar, S. and Vaxelaire, N. and Ji, H. and Shuvayev, V. and Tamargo, M. C. and Kuskovsky, I. L. and Noyan, I. C.},

  abstractNote = {We describe a procedure for the morphological characterization of hard-to-image submonolayer quantum dot structures. This procedure employs high resolution x-ray diffraction based reciprocal space mapping, accompanied by rigorous diffraction modeling for precise determination of the morphology of submonolayer quantum dots. Our modelling results and experimental data clearly show that the investigated quantum dots are anisotropically elongated along the [110] orientation. Complementary polarization dependent photoluminescence measurements, combined with our previously reported magneto-photoluminescence data, confirm this conclusion. Here, our formalism enables direct extraction of structural information of complex embedded three-dimensional structures, which, due to their low electron density contrast with respect to the surrounding host matrix, cannot be readily investigated by traditional electron diffraction techniques.},

  doi          = {10.1063/1.4938399},

  journal      = {Applied Physics Letters},

  number       = 25,

  volume       = 107,

  place        = {United States},

  year         = {Mon Dec 21 00:00:00 EST 2015},

  month        = {Mon Dec 21 00:00:00 EST 2015}

}

Copy to clipboard

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Title: Determination of shape anisotropy in embedded low contrast submonolayer quantum dot structures

Abstract

Citation Formats

Initial stages of InAs epitaxy on vicinal GaAs(001)-(2×4) journal, September 1994

Growth of self-organized quantum dots for optoelectronics applications: nanostructures, nanoepitaxy, defect engineering journal, July 2003

Effect of strain on surface morphology in highly strained InGaAs films journal, June 1991

Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces journal, December 1993

Structure and optical anisotropy of vertically correlated submonolayer InAs/GaAs quantum dots journal, June 2003

Sub-monolayer quantum dots in confinement enhanced dots-in-a-well heterostructure journal, May 2012

Feasibility of submonolayer ZnTe/ZnCdSe quantum dots as intermediate band solar cell material system journal, October 2013

Some advantages of intermediate band solar cells based on type II quantum dots journal, September 2013

Aharonov-Bohm Excitons at Elevated Temperatures in Type-II ZnTe / ZnSe Quantum Dots journal, April 2008

High-resolution x-ray diffraction from multilayered self-assembled Ge dots journal, June 1997

Strain Induced Vertical and Lateral Correlations in Quantum Dot Superlattices journal, July 1999

Vertical alignment of multilayered quantum dots studied by x-ray grazing-incidence diffraction journal, July 1999

Shape-mediated anisotropic strain in self-assembled I n P / I n 0.48 Ga 0.52 P quantum dots journal, March 2002

X-ray diffraction investigation of a three-dimensional Si/SiGe quantum dot crystal journal, January 2009

Vertical correlation and miniband formation in submonolayer Zn(Cd)Te/ZnCdSe type-II quantum dots for intermediate band solar cell application journal, October 2013

Optical properties of δ -doped ZnSe:Te grown by molecular beam epitaxy: The role of tellurium journal, March 2001

Measurement and control of size and density of type-II ZnTe/ZnSe submonolayer quantum dots grown by migration enhanced epitaxy journal, July 2015

Nonspecular x-ray reflection from rough multilayers journal, April 1994

Strain and composition in SiGe nanoscale islands studied by x-ray scattering journal, February 2000

Zero-strain GaAs quantum dot molecules as investigated by x-ray diffuse scattering journal, July 2006

Radiative transitions in stacked type-II ZnMgTe quantum dots embedded in ZnSe journal, September 2012

Determination of lateral size distribution of type-II ZnTe/ZnSe stacked submonolayer quantum dots via spectral analysis of optical signature of the Aharanov-Bohm excitons journal, October 2014

Optical Aharonov-Bohm effect in stacked type-II quantum dots journal, July 2007

Origins of optical anisotropy in artificial atoms journal, October 2006

Impact of heavy hole-light hole coupling on optical selection rules in GaAs quantum dots journal, August 2010

Optical and magnetic anisotropies of the hole states in Stranski-Krastanov quantum dots journal, December 2004

Polarization properties of excitonic qubits in single self-assembled quantum dots journal, April 2012

Optical characterization of structure for semiconductor quantum dots journal, March 2008

Initial stages of InAs epitaxy on vicinal GaAs(001)-(2×4)
journal, September 1994

Growth of self-organized quantum dots for optoelectronics applications: nanostructures, nanoepitaxy, defect engineering
journal, July 2003

Effect of strain on surface morphology in highly strained InGaAs films
journal, June 1991

Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces
journal, December 1993

Structure and optical anisotropy of vertically correlated submonolayer InAs/GaAs quantum dots
journal, June 2003

Sub-monolayer quantum dots in confinement enhanced dots-in-a-well heterostructure
journal, May 2012

Feasibility of submonolayer ZnTe/ZnCdSe quantum dots as intermediate band solar cell material system
journal, October 2013

Some advantages of intermediate band solar cells based on type II quantum dots
journal, September 2013

Aharonov-Bohm Excitons at Elevated Temperatures in Type-II $ZnTe / ZnSe$ Quantum Dots
journal, April 2008

High-resolution x-ray diffraction from multilayered self-assembled Ge dots
journal, June 1997

Strain Induced Vertical and Lateral Correlations in Quantum Dot Superlattices
journal, July 1999

Vertical alignment of multilayered quantum dots studied by x-ray grazing-incidence diffraction
journal, July 1999

Shape-mediated anisotropic strain in self-assembled ${I n P / I n}_{0.48} {Ga}_{0.52} P$ quantum dots
journal, March 2002

X-ray diffraction investigation of a three-dimensional Si/SiGe quantum dot crystal
journal, January 2009

Vertical correlation and miniband formation in submonolayer Zn(Cd)Te/ZnCdSe type-II quantum dots for intermediate band solar cell application
journal, October 2013

Optical properties of $δ$ -doped ZnSe:Te grown by molecular beam epitaxy: The role of tellurium
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Nonspecular x-ray reflection from rough multilayers
journal, April 1994

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Zero-strain GaAs quantum dot molecules as investigated by x-ray diffuse scattering
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Determination of lateral size distribution of type-II ZnTe/ZnSe stacked submonolayer quantum dots via spectral analysis of optical signature of the Aharanov-Bohm excitons
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Optical Aharonov-Bohm effect in stacked type-II quantum dots
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Optical and magnetic anisotropies of the hole states in Stranski-Krastanov quantum dots
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Polarization properties of excitonic qubits in single self-assembled quantum dots
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Optical characterization of structure for semiconductor quantum dots
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