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Title: CdSe/ZnSe quantum dot structures grown by molecular beam epitaxy with a CdTe submonolayer stressor

Abstract

A procedure for formation of CdSe quantum dots (QDs) in a ZnSe matrix is suggested. The procedure is based on the introduction of a CdTe submonolayer stressor deposited on the matrix surface just before deposition of the material of the QDs. (For CdTe/ZnSe structure, the relative lattice mismatch is {delta}a/a {approx} 14%.) The stressor forms small strained islands at the ZnSe surface, thus producing local fields of high elastic stresses controlling the process of the self-assembling of the QDs. According to the data of transmission electron microscopy, this procedure allows a considerable increase in the surface density of QDs, with a certain decrease in their lateral dimensions (down to 4.5 {+-} 1.5 nm). In the photoluminescence spectra, a noticeable ({approx}150 meV) shift of the peak to longer wavelengths from the position of the reference CdSe/ZnSe QD structure is observed. The shift is due to some transformation of the morphology of the QDs and an increase in the Cd content in the QDs. Comprehensive studies of the nanostructures by recording and analyzing the excitation spectra of photoluminescence, the time-resolved photoluminescence spectra, and the cathodoluminescence spectra show that the emission spectra involve two types of optical transitions, namely, the type-I transitions inmore » the CdSeTe/ZnSe QDs and the type-II transitions caused mainly by the low cadmium content (Zn,Cd)(Se,Te)/ZnSe layer formed between the QDs.« less

Authors:
; ; ;  [1]; ;  [2];  [1]
  1. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
  2. Universite J. Fourier-Grenoble, CEA-CNRS-UJF Group 'Nanophysique et Semiconducteurs', Laboratoire de Spectrometrie Physique (CNRS UMR5588) (France)
Publication Date:
OSTI Identifier:
21087961
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 41; Journal Issue: 11; Other Information: DOI: 10.1134/S1063782607110139; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CADMIUM SELENIDES; CADMIUM TELLURIDES; CATHODOLUMINESCENCE; CRYSTAL DEFECTS; DEPOSITION; EMISSION SPECTRA; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; QUANTUM DOTS; STRESSES; TRANSMISSION ELECTRON MICROSCOPY; ZINC SELENIDES

Citation Formats

Sedova, I. V., E-mail: irina@beam.ioffe.ru, Lyublinskaya, O G, Sorokin, S V, Sitnikova, A A, Toropov, A A, Donatini, F, Dang, Si Le, and Ivanov, S V. CdSe/ZnSe quantum dot structures grown by molecular beam epitaxy with a CdTe submonolayer stressor. United States: N. p., 2007. Web. doi:10.1134/S1063782607110139.
Sedova, I. V., E-mail: irina@beam.ioffe.ru, Lyublinskaya, O G, Sorokin, S V, Sitnikova, A A, Toropov, A A, Donatini, F, Dang, Si Le, & Ivanov, S V. CdSe/ZnSe quantum dot structures grown by molecular beam epitaxy with a CdTe submonolayer stressor. United States. https://doi.org/10.1134/S1063782607110139
Sedova, I. V., E-mail: irina@beam.ioffe.ru, Lyublinskaya, O G, Sorokin, S V, Sitnikova, A A, Toropov, A A, Donatini, F, Dang, Si Le, and Ivanov, S V. Thu . "CdSe/ZnSe quantum dot structures grown by molecular beam epitaxy with a CdTe submonolayer stressor". United States. https://doi.org/10.1134/S1063782607110139.
@article{osti_21087961,
title = {CdSe/ZnSe quantum dot structures grown by molecular beam epitaxy with a CdTe submonolayer stressor},
author = {Sedova, I. V., E-mail: irina@beam.ioffe.ru and Lyublinskaya, O G and Sorokin, S V and Sitnikova, A A and Toropov, A A and Donatini, F and Dang, Si Le and Ivanov, S V},
abstractNote = {A procedure for formation of CdSe quantum dots (QDs) in a ZnSe matrix is suggested. The procedure is based on the introduction of a CdTe submonolayer stressor deposited on the matrix surface just before deposition of the material of the QDs. (For CdTe/ZnSe structure, the relative lattice mismatch is {delta}a/a {approx} 14%.) The stressor forms small strained islands at the ZnSe surface, thus producing local fields of high elastic stresses controlling the process of the self-assembling of the QDs. According to the data of transmission electron microscopy, this procedure allows a considerable increase in the surface density of QDs, with a certain decrease in their lateral dimensions (down to 4.5 {+-} 1.5 nm). In the photoluminescence spectra, a noticeable ({approx}150 meV) shift of the peak to longer wavelengths from the position of the reference CdSe/ZnSe QD structure is observed. The shift is due to some transformation of the morphology of the QDs and an increase in the Cd content in the QDs. Comprehensive studies of the nanostructures by recording and analyzing the excitation spectra of photoluminescence, the time-resolved photoluminescence spectra, and the cathodoluminescence spectra show that the emission spectra involve two types of optical transitions, namely, the type-I transitions in the CdSeTe/ZnSe QDs and the type-II transitions caused mainly by the low cadmium content (Zn,Cd)(Se,Te)/ZnSe layer formed between the QDs.},
doi = {10.1134/S1063782607110139},
url = {https://www.osti.gov/biblio/21087961}, journal = {Semiconductors},
issn = {1063-7826},
number = 11,
volume = 41,
place = {United States},
year = {2007},
month = {11}
}