Resonant tunnelling in a quantum oxide superlattice
Abstract
Resonant tunneling is a quantum mechanical process that has long been attracting both scientific and technological attention owing to its intriguing underlying physics and unique applications for high-speed electronics. The materials system exhibiting resonant tunneling, however, has been largely limited to the conventional semiconductors, partially due to their excellent crystalline quality. Here we show that a deliberately designed transition metal oxide superlattice exhibits a resonant tunneling behaviour with a clear negative differential resistance. The tunneling occurred through an atomically thin, lanthanum δ- doped SrTiO3 layer, and the negative differential resistance was realized on top of the bi-polar resistance switching typically observed for perovskite oxide junctions. This combined process resulted in an extremely large resistance ratio (~105) between the high and low resistance states. Lastly, the unprecedentedly large control found in atomically thin δ-doped oxide superlattices can open a door to novel oxide-based high-frequency logic devices.
- Authors:
-
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division; Sungkyunkwan Univ., Suwon (Republic of Korea). Dept. of Physics
- Sungkyunkwan Univ., Suwon (Republic of Korea). Dept. of Physics; Sungkyunkwan Univ., Suwon (Republic of Korea). Institute of Basic Science
- Southern Methodist Univ., Dallas, TX (United States). Department of Mechanical Engineering
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division; Korea Inst. of Science and Technology, Seoul (Korea)
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division
- Publication Date:
- Research Org.:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1190747
- Grant/Contract Number:
- AC05-00OR22725
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Nature Communications
- Additional Journal Information:
- Journal Volume: 6; Journal ID: ISSN 2041-1723
- Publisher:
- Nature Publishing Group
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Choi, Woo Seok, Lee, Sang A., You, Jeong Ho, Lee, Suyoun, and Lee, Ho Nyung. Resonant tunnelling in a quantum oxide superlattice. United States: N. p., 2015.
Web. doi:10.1038/ncomms8424.
Choi, Woo Seok, Lee, Sang A., You, Jeong Ho, Lee, Suyoun, & Lee, Ho Nyung. Resonant tunnelling in a quantum oxide superlattice. United States. https://doi.org/10.1038/ncomms8424
Choi, Woo Seok, Lee, Sang A., You, Jeong Ho, Lee, Suyoun, and Lee, Ho Nyung. Wed .
"Resonant tunnelling in a quantum oxide superlattice". United States. https://doi.org/10.1038/ncomms8424. https://www.osti.gov/servlets/purl/1190747.
@article{osti_1190747,
title = {Resonant tunnelling in a quantum oxide superlattice},
author = {Choi, Woo Seok and Lee, Sang A. and You, Jeong Ho and Lee, Suyoun and Lee, Ho Nyung},
abstractNote = {Resonant tunneling is a quantum mechanical process that has long been attracting both scientific and technological attention owing to its intriguing underlying physics and unique applications for high-speed electronics. The materials system exhibiting resonant tunneling, however, has been largely limited to the conventional semiconductors, partially due to their excellent crystalline quality. Here we show that a deliberately designed transition metal oxide superlattice exhibits a resonant tunneling behaviour with a clear negative differential resistance. The tunneling occurred through an atomically thin, lanthanum δ- doped SrTiO3 layer, and the negative differential resistance was realized on top of the bi-polar resistance switching typically observed for perovskite oxide junctions. This combined process resulted in an extremely large resistance ratio (~105) between the high and low resistance states. Lastly, the unprecedentedly large control found in atomically thin δ-doped oxide superlattices can open a door to novel oxide-based high-frequency logic devices.},
doi = {10.1038/ncomms8424},
journal = {Nature Communications},
number = ,
volume = 6,
place = {United States},
year = {Wed Jun 24 00:00:00 EDT 2015},
month = {Wed Jun 24 00:00:00 EDT 2015}
}
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