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Title: Avoiding polar catastrophe in the growth of polarly orientated nickel perovskite thin films by reactive oxide molecular beam epitaxy

Abstract

By means of the state-of-the-art reactive oxide molecular beam epitaxy, we synthesized (001)- and (111)-orientated polar LaNiO{sub 3} thin films. In order to avoid the interfacial reconstructions induced by polar catastrophe, screening metallic Nb-doped SrTiO{sub 3} and iso-polarity LaAlO{sub 3} substrates were chosen to achieve high-quality (001)-orientated films in a layer-by-layer growth mode. For largely polar (111)-orientated films, we showed that iso-polarity LaAlO{sub 3} (111) substrate was more suitable than Nb-doped SrTiO{sub 3}. In situ reflection high-energy electron diffraction, ex situ high-resolution X-ray diffraction, and atomic force microscopy were used to characterize these films. Our results show that special attentions need to be paid to grow high-quality oxide films with polar orientations, which can prompt the explorations of all-oxide electronics and artificial interfacial engineering to pursue intriguing emergent physics like proposed interfacial superconductivity and topological phases in LaNiO{sub 3} based superlattices.

Authors:
; ; ; ; ; ;  [1];  [1];  [2];  [1];  [3];  [2]
  1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050 (China)
  2. (China)
  3. (CENSE), Shanghai 200050 (China)
Publication Date:
OSTI Identifier:
22611387
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 6; Journal Issue: 8; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINATES; ATOMIC FORCE MICROSCOPY; DOPED MATERIALS; ELECTRON DIFFRACTION; LANTHANUM COMPOUNDS; LAYERS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NICKEL COMPOUNDS; NIOBIUM ADDITIONS; OXIDES; OXYGEN COMPOUNDS; PEROVSKITE; REFLECTION; RESOLUTION; STRONTIUM TITANATES; SUBSTRATES; SUPERLATTICES; THIN FILMS; X-RAY DIFFRACTION

Citation Formats

Yang, H. F., Liu, Z. T., Fan, C. C., Xiang, P., Zhang, K. L., Li, M. Y., Liu, J. S., Yao, Q., State Key Laboratory of Surface Physics, Department of Physics, and Advanced Materials Laboratory, Fudan University, Shanghai 200433, Shen, D. W., E-mail: dwshen@mail.sim.ac.cn, CAS Center for Excellence in Superconducting Eletronics, and CAS-Shanghai Science Research Center, Shanghai 201203. Avoiding polar catastrophe in the growth of polarly orientated nickel perovskite thin films by reactive oxide molecular beam epitaxy. United States: N. p., 2016. Web. doi:10.1063/1.4961700.
Yang, H. F., Liu, Z. T., Fan, C. C., Xiang, P., Zhang, K. L., Li, M. Y., Liu, J. S., Yao, Q., State Key Laboratory of Surface Physics, Department of Physics, and Advanced Materials Laboratory, Fudan University, Shanghai 200433, Shen, D. W., E-mail: dwshen@mail.sim.ac.cn, CAS Center for Excellence in Superconducting Eletronics, & CAS-Shanghai Science Research Center, Shanghai 201203. Avoiding polar catastrophe in the growth of polarly orientated nickel perovskite thin films by reactive oxide molecular beam epitaxy. United States. doi:10.1063/1.4961700.
Yang, H. F., Liu, Z. T., Fan, C. C., Xiang, P., Zhang, K. L., Li, M. Y., Liu, J. S., Yao, Q., State Key Laboratory of Surface Physics, Department of Physics, and Advanced Materials Laboratory, Fudan University, Shanghai 200433, Shen, D. W., E-mail: dwshen@mail.sim.ac.cn, CAS Center for Excellence in Superconducting Eletronics, and CAS-Shanghai Science Research Center, Shanghai 201203. 2016. "Avoiding polar catastrophe in the growth of polarly orientated nickel perovskite thin films by reactive oxide molecular beam epitaxy". United States. doi:10.1063/1.4961700.
@article{osti_22611387,
title = {Avoiding polar catastrophe in the growth of polarly orientated nickel perovskite thin films by reactive oxide molecular beam epitaxy},
author = {Yang, H. F. and Liu, Z. T. and Fan, C. C. and Xiang, P. and Zhang, K. L. and Li, M. Y. and Liu, J. S. and Yao, Q. and State Key Laboratory of Surface Physics, Department of Physics, and Advanced Materials Laboratory, Fudan University, Shanghai 200433 and Shen, D. W., E-mail: dwshen@mail.sim.ac.cn and CAS Center for Excellence in Superconducting Eletronics and CAS-Shanghai Science Research Center, Shanghai 201203},
abstractNote = {By means of the state-of-the-art reactive oxide molecular beam epitaxy, we synthesized (001)- and (111)-orientated polar LaNiO{sub 3} thin films. In order to avoid the interfacial reconstructions induced by polar catastrophe, screening metallic Nb-doped SrTiO{sub 3} and iso-polarity LaAlO{sub 3} substrates were chosen to achieve high-quality (001)-orientated films in a layer-by-layer growth mode. For largely polar (111)-orientated films, we showed that iso-polarity LaAlO{sub 3} (111) substrate was more suitable than Nb-doped SrTiO{sub 3}. In situ reflection high-energy electron diffraction, ex situ high-resolution X-ray diffraction, and atomic force microscopy were used to characterize these films. Our results show that special attentions need to be paid to grow high-quality oxide films with polar orientations, which can prompt the explorations of all-oxide electronics and artificial interfacial engineering to pursue intriguing emergent physics like proposed interfacial superconductivity and topological phases in LaNiO{sub 3} based superlattices.},
doi = {10.1063/1.4961700},
journal = {AIP Advances},
number = 8,
volume = 6,
place = {United States},
year = 2016,
month = 8
}
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