Validation of the dynamic recrystallization (DRX) mechanism for whisker and hillock growth on thin films
Abstract
Our study was performed to validate a first-principles model for whisker and hillock formation based on the cyclic dynamic recrystallization (DRX) mechanism in conjunction with long-range diffusion. The test specimens were evaporated Sn films on Si having thicknesses of 0.25 μm, 0.50 μm, 1.0 μm, 2.0 μm, and 4.9 μm. Air annealing was performed at 35°C, 60°C, 100°C, 120°C, or 150°C over a time duration of 9 days. The stresses, anelastic strains, and strain rates in the Sn films were predicted by a computational model based upon the constitutive properties of 95.5Sn-3.9Ag-0.6Cu (wt.%) as a surrogate for pure Sn. The cyclic DRX mechanism and, in particular, whether long whiskers or hillocks were formed, was validated by comparing the empirical data against the three hierarchal requirements: (1) DRX to occur at all: εc = A D o m Z n , (2) DRX to be cyclic: D o < 2D r, and (3) Grain boundary pinning (thin films): h versus d. Continuous DRX took place in the 2.0-μm and 4.9-μm films that resulted in short stubby whiskers. Depleted zones, which resulted solely from a tensile stress-driven diffusion mechanism, confirmed the pervasiveness of long-range diffusion so that it did not control whiskermore »
- Authors:
-
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 1182977
- Report Number(s):
- SAND-2014-15673J
Journal ID: ISSN 0361-5235; 533638
- Grant/Contract Number:
- AC04-94AL85000
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Electronic Materials
- Additional Journal Information:
- Journal Volume: 44; Journal Issue: 10; Journal ID: ISSN 0361-5235
- Publisher:
- Springer
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; Sn whiskers; hillocks; depleted zones; dynamic recrystallization (DRX)
Citation Formats
Vianco, Paul T., Neilsen, Michael K., Rejent, Jerome A., and Grant, Richard P. Validation of the dynamic recrystallization (DRX) mechanism for whisker and hillock growth on thin films. United States: N. p., 2015.
Web. doi:10.1007/s11664-015-3779-4.
Vianco, Paul T., Neilsen, Michael K., Rejent, Jerome A., & Grant, Richard P. Validation of the dynamic recrystallization (DRX) mechanism for whisker and hillock growth on thin films. United States. https://doi.org/10.1007/s11664-015-3779-4
Vianco, Paul T., Neilsen, Michael K., Rejent, Jerome A., and Grant, Richard P. Fri .
"Validation of the dynamic recrystallization (DRX) mechanism for whisker and hillock growth on thin films". United States. https://doi.org/10.1007/s11664-015-3779-4. https://www.osti.gov/servlets/purl/1182977.
@article{osti_1182977,
title = {Validation of the dynamic recrystallization (DRX) mechanism for whisker and hillock growth on thin films},
author = {Vianco, Paul T. and Neilsen, Michael K. and Rejent, Jerome A. and Grant, Richard P.},
abstractNote = {Our study was performed to validate a first-principles model for whisker and hillock formation based on the cyclic dynamic recrystallization (DRX) mechanism in conjunction with long-range diffusion. The test specimens were evaporated Sn films on Si having thicknesses of 0.25 μm, 0.50 μm, 1.0 μm, 2.0 μm, and 4.9 μm. Air annealing was performed at 35°C, 60°C, 100°C, 120°C, or 150°C over a time duration of 9 days. The stresses, anelastic strains, and strain rates in the Sn films were predicted by a computational model based upon the constitutive properties of 95.5Sn-3.9Ag-0.6Cu (wt.%) as a surrogate for pure Sn. The cyclic DRX mechanism and, in particular, whether long whiskers or hillocks were formed, was validated by comparing the empirical data against the three hierarchal requirements: (1) DRX to occur at all: εc = A D o m Z n , (2) DRX to be cyclic: D o < 2D r, and (3) Grain boundary pinning (thin films): h versus d. Continuous DRX took place in the 2.0-μm and 4.9-μm films that resulted in short stubby whiskers. Depleted zones, which resulted solely from a tensile stress-driven diffusion mechanism, confirmed the pervasiveness of long-range diffusion so that it did not control whisker or hillock formation other than a small loss of activity by reduced thermal activation at lower temperatures. Furthermore, a first-principles DRX model paves the way to develop like mitigation strategies against long whisker growth.},
doi = {10.1007/s11664-015-3779-4},
journal = {Journal of Electronic Materials},
number = 10,
volume = 44,
place = {United States},
year = {Fri May 01 00:00:00 EDT 2015},
month = {Fri May 01 00:00:00 EDT 2015}
}
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Works referencing / citing this record:
A full-field crystal plasticity study on how texture and grain structure influences hydrostatic stress in thermally strained β -Sn films
journal, July 2018
- Chakraborty, Aritra; Eisenlohr, Philip
- Journal of Applied Physics, Vol. 124, Issue 2