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Title: Digital Transfer Growth of Patterned 2D Metal Chalcogenides by Confined Nanoparticle Evaporation

Abstract

Developing methods for the facile synthesis of two-dimensional (2D) metal chalcogenides and other layered materials is crucial for emerging applications in functional devices. Controlling the stoichiometry, number of the layers, crystallite size, growth location, and areal uniformity is challenging in conventional vapor phase synthesis. Here, we demonstrate a new route to control these parameters in the growth of metal chalcogenide (GaSe) and dichalcogenide (MoSe2) 2D crystals by precisely defining the mass and location of the source materials in a confined transfer growth system. A uniform and precise amount of stoichiometric nanoparticles are first synthesized and deposited onto a substrate by pulsed laser deposition (PLD) at room temperature. This source substrate is then covered with a receiver substrate to form a confined vapor transport growth (VTG) system. By simply heating the source substrate in an inert background gas, a natural temperature gradient is formed that evaporates the confined nanoparticles to grow large, crystalline 2D nanosheets on the cooler receiver substrate, the temperature of which is controlled by the background gas pressure. Large monolayer crystalline domains (~ 100 m lateral sizes) of GaSe and MoSe2 are demonstrated, as well as continuous monolayer films through the deposition of additional precursor materials. This novelmore » PLD-VTG synthesis and processing method offers a unique approach for the controlled growth of large-area, metal chalcogenides with a controlled number of layers in patterned growth locations for optoelectronics and energy related applications.« less

Authors:
 [1];  [2];  [1];  [1];  [1];  [1];  [3];  [1];  [1];  [3];  [4];  [1]
+ Show Author Affiliations
  1. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science
  2. Univ. of Tennessee, Knoxville, TN (United States)
  3. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division
  4. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division; Univ. of Tennessee, Knoxville, TN (United States)
Publication Date:
Research Org.:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1162084
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Accepted Manuscript
Journal Name:
ACS Nano
Additional Journal Information:
Journal Volume: 8; Journal Issue: 11; Journal ID: ISSN 1936-0851
Publisher:
American Chemical Society (ACS)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; 2D layered materials; metal chalcogenides; gallium selenide; molybdenum diselenide; pulsed laser deposition; vapor transport growth

Citation Formats

Mahjouri-Samani, Masoud, Tian, Mengkun, Wang, Kai, Boulesbaa, Abdelaziz, Rouleau, Christopher M., Puretzky, Alexander A., McGuire, Michael A., Srijanto, Bernadeta R., Xiao, Kai, Eres, Gyula, Duscher, Gerd, and Geohegan, David B. Digital Transfer Growth of Patterned 2D Metal Chalcogenides by Confined Nanoparticle Evaporation. United States: N. p., 2014. Web. doi:10.1021/nn5048124.
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Mahjouri-Samani, Masoud, Tian, Mengkun, Wang, Kai, Boulesbaa, Abdelaziz, Rouleau, Christopher M., Puretzky, Alexander A., McGuire, Michael A., Srijanto, Bernadeta R., Xiao, Kai, Eres, Gyula, Duscher, Gerd, & Geohegan, David B. Digital Transfer Growth of Patterned 2D Metal Chalcogenides by Confined Nanoparticle Evaporation. United States. https://doi.org/10.1021/nn5048124
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Mahjouri-Samani, Masoud, Tian, Mengkun, Wang, Kai, Boulesbaa, Abdelaziz, Rouleau, Christopher M., Puretzky, Alexander A., McGuire, Michael A., Srijanto, Bernadeta R., Xiao, Kai, Eres, Gyula, Duscher, Gerd, and Geohegan, David B. Sun . "Digital Transfer Growth of Patterned 2D Metal Chalcogenides by Confined Nanoparticle Evaporation". United States. https://doi.org/10.1021/nn5048124. https://www.osti.gov/servlets/purl/1162084.
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@article{osti_1162084,
title = {Digital Transfer Growth of Patterned 2D Metal Chalcogenides by Confined Nanoparticle Evaporation},
author = {Mahjouri-Samani, Masoud and Tian, Mengkun and Wang, Kai and Boulesbaa, Abdelaziz and Rouleau, Christopher M. and Puretzky, Alexander A. and McGuire, Michael A. and Srijanto, Bernadeta R. and Xiao, Kai and Eres, Gyula and Duscher, Gerd and Geohegan, David B.},
abstractNote = {Developing methods for the facile synthesis of two-dimensional (2D) metal chalcogenides and other layered materials is crucial for emerging applications in functional devices. Controlling the stoichiometry, number of the layers, crystallite size, growth location, and areal uniformity is challenging in conventional vapor phase synthesis. Here, we demonstrate a new route to control these parameters in the growth of metal chalcogenide (GaSe) and dichalcogenide (MoSe2) 2D crystals by precisely defining the mass and location of the source materials in a confined transfer growth system. A uniform and precise amount of stoichiometric nanoparticles are first synthesized and deposited onto a substrate by pulsed laser deposition (PLD) at room temperature. This source substrate is then covered with a receiver substrate to form a confined vapor transport growth (VTG) system. By simply heating the source substrate in an inert background gas, a natural temperature gradient is formed that evaporates the confined nanoparticles to grow large, crystalline 2D nanosheets on the cooler receiver substrate, the temperature of which is controlled by the background gas pressure. Large monolayer crystalline domains (~ 100 m lateral sizes) of GaSe and MoSe2 are demonstrated, as well as continuous monolayer films through the deposition of additional precursor materials. This novel PLD-VTG synthesis and processing method offers a unique approach for the controlled growth of large-area, metal chalcogenides with a controlled number of layers in patterned growth locations for optoelectronics and energy related applications.},
doi = {10.1021/nn5048124},
journal = {ACS Nano},
number = 11,
volume = 8,
place = {United States},
year = {Sun Oct 19 00:00:00 EDT 2014},
month = {Sun Oct 19 00:00:00 EDT 2014}
}
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Works referenced in this record:

Synthesis of Few-Layer GaSe Nanosheets for High Performance Photodetectors
journal, June 2012

  • Hu, PingAn; Wen, Zhenzhong; Wang, Lifeng
  • ACS Nano, Vol. 6, Issue 7
  • DOI: 10.1021/nn300889c

Gas-phase nanoparticle formation and transport during pulsed laser deposition of Y1Ba2Cu3O7−d
journal, June 1999

  • Geohegan, D. B.; Puretzky, A. A.; Rader, D. J.
  • Applied Physics Letters, Vol. 74, Issue 25
  • DOI: 10.1063/1.124180

Rapid Characterization of Ultrathin Layers of Chalcogenides on SiO2/Si Substrates
journal, February 2012

  • Late, Dattatray J.; Liu, Bin; Matte, H. S. S. Ramakrishna
  • Advanced Functional Materials, Vol. 22, Issue 9
  • DOI: 10.1002/adfm.201102913

Raman investigation of InSe and GaSe single-crystals oxidation
journal, January 2002

  • Balitskii, O. A.; Savchyn, V. P.; Yukhymchuk, V. O.
  • Semiconductor Science and Technology, Vol. 17, Issue 2
  • DOI: 10.1088/0268-1242/17/2/101

Synthesis and Optical Properties of Large-Area Single-Crystalline 2D Semiconductor WS 2 Monolayer from Chemical Vapor Deposition
journal, December 2013

  • Cong, Chunxiao; Shang, Jingzhi; Wu, Xing
  • Advanced Optical Materials, Vol. 2, Issue 2
  • DOI: 10.1002/adom.201300428

Graphene and Graphene-like Two-Dimensional Materials in Photodetection: Mechanisms and Methodology
journal, April 2014

Time-resolved imaging of gas phase nanoparticle synthesis by laser ablation
journal, June 1998

  • Geohegan, David B.; Puretzky, Alex A.; Duscher, Gerd
  • Applied Physics Letters, Vol. 72, Issue 23
  • DOI: 10.1063/1.121516

Two-Dimensional Nanosheets Produced by Liquid Exfoliation of Layered Materials
journal, February 2011

Large-Area Single-Layer MoSe 2 and Its van der Waals Heterostructures
journal, June 2014

  • Shim, Gi Woong; Yoo, Kwonjae; Seo, Seung-Bum
  • ACS Nano, Vol. 8, Issue 7
  • DOI: 10.1021/nn405685j

Chemical Vapor Deposition Growth of Crystalline Monolayer MoSe2
journal, April 2014

  • Wang, Xingli; Gong, Yongji; Shi, Gang
  • ACS Nano, Vol. 8, Issue 5, p. 5125-5131
  • DOI: 10.1021/nn501175k

Exciton-carrier scattering in gallium selenide
journal, March 1993

  • Capozzi, Vito; Pavesi, Lorenzo; Staehli, Jean Louis
  • Physical Review B, Vol. 47, Issue 11
  • DOI: 10.1103/PhysRevB.47.6340

The chemical exfoliation phenomena in layered GaSe-polyaniline composite
journal, January 2013

  • Aksimentyeva, Olena Igorivna; Demchenko, Pavlo; Savchyn, Volodymyr Pavlovich
  • Nanoscale Research Letters, Vol. 8, Issue 1
  • DOI: 10.1186/1556-276X-8-29

Atomically Thin MoS2 A New Direct-Gap Semiconductor
journal, September 2010

Synthesis of Large-Area MoS2 Atomic Layers with Chemical Vapor Deposition
journal, March 2012

  • Lee, Yi-Hsien; Zhang, Xin-Quan; Zhang, Wenjing
  • Advanced Materials, Vol. 24, Issue 17, p. 2320-2325
  • DOI: 10.1002/adma.201104798

Single-Layer MoS2 Phototransistors
journal, December 2011

  • Yin, Zongyou; Li, Hai; Li, Hong
  • ACS Nano, Vol. 6, Issue 1, p. 74-80
  • DOI: 10.1021/nn2024557

Ambipolar Molybdenum Diselenide Field-Effect Transistors: Field-Effect and Hall Mobilities
journal, July 2014

  • Pradhan, Nihar R.; Rhodes, Daniel; Xin, Yan
  • ACS Nano, Vol. 8, Issue 8, p. 7923-7929
  • DOI: 10.1021/nn501693d

Synthesis of MoS2 and MoSe2 Films with Vertically Aligned Layers
journal, February 2013

  • Kong, Desheng; Wang, Haotian; Cha, Judy J.
  • Nano Letters, Vol. 13, Issue 3, p. 1341-1347
  • DOI: 10.1021/nl400258t

2-Dimensional Transition Metal Dichalcogenides with Tunable Direct Band Gaps: MoS 2(1-x) Se 2x Monolayers
journal, December 2013

Electronic structure of MoSe 2 , MoS 2 , and WSe 2 . II. The nature of the optical band gaps
journal, April 1987

Active edge sites in MoSe 2 and WSe 2 catalysts for the hydrogen evolution reaction: a density functional study
journal, January 2014

  • Tsai, Charlie; Chan, Karen; Abild-Pedersen, Frank
  • Phys. Chem. Chem. Phys., Vol. 16, Issue 26
  • DOI: 10.1039/C4CP01237B

Large-Area Synthesis of Monolayer and Few-Layer MoSe 2 Films on SiO 2 Substrates
journal, April 2014

  • Lu, Xin; Utama, M. Iqbal Bakti; Lin, Junhao
  • Nano Letters, Vol. 14, Issue 5
  • DOI: 10.1021/nl5000906

High Performance and Bendable Few-Layered InSe Photodetectors with Broad Spectral Response
journal, April 2014

  • Tamalampudi, Srinivasa Reddy; Lu, Yi-Ying; Kumar U., Rajesh
  • Nano Letters, Vol. 14, Issue 5
  • DOI: 10.1021/nl500817g

Photoluminescence emission and Raman response of monolayer MoS_2, MoSe_2, and WSe_2
journal, January 2013

  • Tonndorf, Philipp; Schmidt, Robert; Böttger, Philipp
  • Optics Express, Vol. 21, Issue 4
  • DOI: 10.1364/OE.21.004908

Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2
journal, December 2013

Exciton diffusion in monolayer and bulk MoSe 2
journal, January 2014

  • Kumar, Nardeep; Cui, Qiannan; Ceballos, Frank
  • Nanoscale, Vol. 6, Issue 9
  • DOI: 10.1039/C3NR06863C

The crystal structure of MoSe2
journal, November 1963

Molecular beam epitaxy and interface reactions of layered GaSe growth on sapphire (0001)
journal, July 1998

  • Chegwidden, Scott; Dai, Zurong; Olmstead, Marjorie A.
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 16, Issue 4
  • DOI: 10.1116/1.581355

Layer-Controlled, Wafer-Scale, and Conformal Synthesis of Tungsten Disulfide Nanosheets Using Atomic Layer Deposition
journal, November 2013

  • Song, Jeong-Gyu; Park, Jusang; Lee, Wonseon
  • ACS Nano, Vol. 7, Issue 12
  • DOI: 10.1021/nn405194e

Scalable production of large quantities of defect-free few-layer graphene by shear exfoliation in liquids
journal, April 2014

  • Paton, Keith R.; Varrla, Eswaraiah; Backes, Claudia
  • Nature Materials, Vol. 13, Issue 6
  • DOI: 10.1038/nmat3944

Ultrasensitive photodetectors based on monolayer MoS2
journal, June 2013

  • Lopez-Sanchez, Oriol; Lembke, Dominik; Kayci, Metin
  • Nature Nanotechnology, Vol. 8, Issue 7
  • DOI: 10.1038/nnano.2013.100

GaS and GaSe Ultrathin Layer Transistors
journal, June 2012

Solution-Processed 2D Niobium Diselenide Nanosheets as Efficient Hole-Transport Layers in Organic Solar Cells
journal, January 2014

Evolution of the Electronic Band Structure and Efficient Photo-Detection in Atomic Layers of InSe
journal, January 2014

  • Lei, Sidong; Ge, Liehui; Najmaei, Sina
  • ACS Nano, Vol. 8, Issue 2
  • DOI: 10.1021/nn405036u

Synthesis and Photoresponse of Large GaSe Atomic Layers
journal, May 2013

  • Lei, Sidong; Ge, Liehui; Liu, Zheng
  • Nano Letters, Vol. 13, Issue 6
  • DOI: 10.1021/nl4010089

New First Order Raman-active Modes in Few Layered Transition Metal Dichalcogenides
journal, February 2014

  • Terrones, H.; Corro, E. Del; Feng, S.
  • Scientific Reports, Vol. 4, Issue 1
  • DOI: 10.1038/srep04215

Epitaxy and Photoresponse of Two-Dimensional GaSe Crystals on Flexible Transparent Mica Sheets
journal, January 2014

  • Zhou, Yubing; Nie, Yufeng; Liu, Yujing
  • ACS Nano, Vol. 8, Issue 2
  • DOI: 10.1021/nn405529r

Pulsed Laser Deposition of Photoresponsive Two-Dimensional GaSe Nanosheet Networks
journal, August 2014

  • Mahjouri-Samani, Masoud; Gresback, Ryan; Tian, Mengkun
  • Advanced Functional Materials, Vol. 24, Issue 40, p. 6365-6371
  • DOI: 10.1002/adfm.201401440

Field-Effect Transistors Based on Few-Layered α-MoTe 2
journal, May 2014

  • Pradhan, Nihar R.; Rhodes, Daniel; Feng, Simin
  • ACS Nano, Vol. 8, Issue 6
  • DOI: 10.1021/nn501013c

Electronic and thermoelectric properties of few-layer transition metal dichalcogenides
journal, March 2014

  • Wickramaratne, Darshana; Zahid, Ferdows; Lake, Roger K.
  • The Journal of Chemical Physics, Vol. 140, Issue 12
  • DOI: 10.1063/1.4869142

Valley polarization in MoS2 monolayers by optical pumping
journal, June 2012

  • Zeng, Hualing; Dai, Junfeng; Yao, Wang
  • Nature Nanotechnology, Vol. 7, Issue 8
  • DOI: 10.1038/nnano.2012.95

van der Waals epitaxial growth and characterization of MoSe 2 thin films on SnS 2
journal, September 1990

  • Ohuchi, F. S.; Parkinson, B. A.; Ueno, K.
  • Journal of Applied Physics, Vol. 68, Issue 5
  • DOI: 10.1063/1.346574

Controlled Vapor Phase Growth of Single Crystalline, Two-Dimensional GaSe Crystals with High Photoresponse
journal, June 2014

  • Li, Xufan; Lin, Ming-Wei; Puretzky, Alexander A.
  • Scientific Reports, Vol. 4, Issue 1
  • DOI: 10.1038/srep05497
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    Patterned arrays of lateral heterojunctions within monolayer two-dimensional semiconductors
    journal, July 2015

    • Mahjouri-Samani, Masoud; Lin, Ming-Wei; Wang, Kai
    • Nature Communications, Vol. 6, Issue 1
    • DOI: 10.1038/ncomms8749

    Nanoforging Single Layer MoSe2 Through Defect Engineering with Focused Helium Ion Beams
    journal, August 2016

    • Iberi, Vighter; Liang, Liangbo; Ievlev, Anton V.
    • Scientific Reports, Vol. 6, Issue 1
    • DOI: 10.1038/srep30481

    Colloidally synthesized defect-rich $$\hbox {MoSe}_{2}$$ MoSe 2 nanosheets for superior catalytic activity
    journal, March 2019

    • Hassan, Md Samim; Jana, Atanu; Gahlawat, Soniya
    • Bulletin of Materials Science, Vol. 42, Issue 2
    • DOI: 10.1007/s12034-019-1774-8

    Charged impurity scattering in two-dimensional materials with ring-shaped valence bands: GaS, GaSe, InS, and InSe
    journal, February 2019

    Curvature-dependent flexible light emission from layered gallium selenide crystals
    journal, January 2018

    • Chuang, Ching-An; Lin, Min-Han; Yeh, Bo-Xian
    • RSC Advances, Vol. 8, Issue 5
    • DOI: 10.1039/c7ra11600d

    Electronic and thermoelectric properties of van der Waals materials with ring-shaped valence bands
    journal, August 2015

    • Wickramaratne, Darshana; Zahid, Ferdows; Lake, Roger K.
    • Journal of Applied Physics, Vol. 118, Issue 7
    • DOI: 10.1063/1.4928559

    Accelerated synthesis of atomically-thin 2D quantum materials by a novel laser-assisted synthesis technique
    journal, November 2019

    Laser Synthesis, Processing, and Spectroscopy of Atomically-Thin Two Dimensional Materials
    book, January 2018

    • Geohegan, David B.; Puretzky, Alex A.; Boulesbaa, Aziz
    • Advances in the Application of Lasers in Materials Science
    • DOI: 10.1007/978-3-319-96845-2_1

    First-principles study of electronic, optical and thermal transport properties of group III–VI monolayer MX (M = Ga, In; X = S, Se)
    journal, June 2019

    • Wang, Huimin; Qin, Guangzhao; Yang, Jiayue
    • Journal of Applied Physics, Vol. 125, Issue 24
    • DOI: 10.1063/1.5094663

    Patterned arrays of lateral heterojunctions within monolayer two-dimensional semiconductors
    journal, July 2015

    • Mahjouri-Samani, Masoud; Lin, Ming-Wei; Wang, Kai
    • Nature Communications, Vol. 6, Issue 1
    • DOI: 10.1038/ncomms8749

    Synthesis and emerging properties of 2D layered III–VI metal chalcogenides
    journal, December 2019

    • Cai, Hui; Gu, Yiyi; Lin, Yu-Chuan
    • Applied Physics Reviews, Vol. 6, Issue 4
    • DOI: 10.1063/1.5123487

    Pulsed laser deposition of single-layer MoS 2 on Au(111): from nanosized crystals to large-area films
    journal, January 2019

    • Tumino, Francesco; Casari, Carlo S.; Passoni, Matteo
    • Nanoscale Advances, Vol. 1, Issue 2
    • DOI: 10.1039/c8na00126j

    2D layered group IIIA metal chalcogenides: synthesis, properties and applications in electronics and optoelectronics
    journal, January 2016

    • Huang, Wenjuan; Gan, Lin; Li, Huiqiao
    • CrystEngComm, Vol. 18, Issue 22
    • DOI: 10.1039/c5ce01986a
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