Influence of interface sink strength on the reduction of radiation-induced defect concentrations and fluxes in materials with large interface area per unit volume

Demkowicz, M. J.; Hoagland, R. G.; Uberuaga, B. P.; Misra, A.

doi:10.1103/PhysRevB.84.104102

Title: Influence of interface sink strength on the reduction of radiation-induced defect concentrations and fluxes in materials with large interface area per unit volume

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Authors:: Demkowicz, M. J.; Hoagland, R. G.; Uberuaga, B. P.; Misra, A.

Publication Date:: Fri Sep 02 00:00:00 EDT 2011

Sponsoring Org.:: USDOE

OSTI Identifier:: 1100696

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Physical Review B

Additional Journal Information:: Journal Volume: 84; Journal Issue: 10; Journal ID: ISSN 1098-0121

Publisher:: American Physical Society

Country of Publication:: United States

Language:: English

Citation Formats


                    Demkowicz, M. J., Hoagland, R. G., Uberuaga, B. P., and Misra, A. Influence of interface sink strength on the reduction of radiation-induced defect concentrations and fluxes in materials with large interface area per unit volume.  United States: N. p., 2011. 
Web.  doi:10.1103/PhysRevB.84.104102.

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                    Demkowicz, M. J., Hoagland, R. G., Uberuaga, B. P., & Misra, A. Influence of interface sink strength on the reduction of radiation-induced defect concentrations and fluxes in materials with large interface area per unit volume.  United States.  https://doi.org/10.1103/PhysRevB.84.104102

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                    Demkowicz, M. J., Hoagland, R. G., Uberuaga, B. P., and Misra, A. Fri .  
"Influence of interface sink strength on the reduction of radiation-induced defect concentrations and fluxes in materials with large interface area per unit volume".  United States.  https://doi.org/10.1103/PhysRevB.84.104102.

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@article{osti_1100696,

  title        = {Influence of interface sink strength on the reduction of radiation-induced defect concentrations and fluxes in materials with large interface area per unit volume},

  author       = {Demkowicz, M. J. and Hoagland, R. G. and Uberuaga, B. P. and Misra, A.},

  abstractNote = {},

  doi          = {10.1103/PhysRevB.84.104102},

  journal      = {Physical Review B},

  number       = 10,

  volume       = 84,

  place        = {United States},

  year         = {Fri Sep 02 00:00:00 EDT 2011},

  month        = {Fri Sep 02 00:00:00 EDT 2011}

}

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Influence of interface sink strength on the reduction of radiation-induced defect concentrations and fluxes in materials with large interface area per unit volume

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