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Title: Influence of interface sink strength on the reduction of radiation-induced defect concentrations and fluxes in materials with large interface area per unit volume

Journal Article · · Physical Review. B, Condensed Matter and Materials Physics
 [1]; ;  [2];  [3]
  1. Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)
  2. MST-8: Structure-Property Relations Group, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)
  3. Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

We use a reaction-diffusion model to demonstrate that buried interfaces in polycrystalline composites simultaneously reduce both the concentrations and the fluxes of radiation-induced defects. The steady-state radiation-induced defect concentrations, however, are highly sensitive to the interface sink strength {eta}. Materials containing a large volume fraction of interfaces may therefore be resistant to multiple forms of radiation-induced degradation, such as swelling and hardening, as well as to embrittlement by solute segregation, provided that the interfaces have suitable {eta} values.

OSTI ID:
21596859
Journal Information:
Physical Review. B, Condensed Matter and Materials Physics, Vol. 84, Issue 10; Other Information: DOI: 10.1103/PhysRevB.84.104102; (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 1098-0121
Country of Publication:
United States
Language:
English