Influence of interface sink strength on the reduction of radiation-induced defect concentrations and fluxes in materials with large interface area per unit volume
Journal Article
·
· Physical Review. B, Condensed Matter and Materials Physics
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)
- MST-8: Structure-Property Relations Group, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)
We use a reaction-diffusion model to demonstrate that buried interfaces in polycrystalline composites simultaneously reduce both the concentrations and the fluxes of radiation-induced defects. The steady-state radiation-induced defect concentrations, however, are highly sensitive to the interface sink strength {eta}. Materials containing a large volume fraction of interfaces may therefore be resistant to multiple forms of radiation-induced degradation, such as swelling and hardening, as well as to embrittlement by solute segregation, provided that the interfaces have suitable {eta} values.
- OSTI ID:
- 21596859
- Journal Information:
- Physical Review. B, Condensed Matter and Materials Physics, Vol. 84, Issue 10; Other Information: DOI: 10.1103/PhysRevB.84.104102; (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 1098-0121
- Country of Publication:
- United States
- Language:
- English
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