skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Quantum Hall Effect and Semimetallic Behavior of Dual-Gated ABA-Stacked Trilayer Graphene

Authors:
; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1098997
Resource Type:
Published Article
Journal Name:
Physical Review X
Additional Journal Information:
Journal Volume: 2; Journal Issue: 1; Journal ID: ISSN 2160-3308
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Henriksen, E. A., Nandi, D., and Eisenstein, J. P.. Quantum Hall Effect and Semimetallic Behavior of Dual-Gated ABA-Stacked Trilayer Graphene. United States: N. p., 2012. Web. doi:10.1103/PhysRevX.2.011004.
Henriksen, E. A., Nandi, D., & Eisenstein, J. P.. Quantum Hall Effect and Semimetallic Behavior of Dual-Gated ABA-Stacked Trilayer Graphene. United States. doi:10.1103/PhysRevX.2.011004.
Henriksen, E. A., Nandi, D., and Eisenstein, J. P.. Thu . "Quantum Hall Effect and Semimetallic Behavior of Dual-Gated ABA-Stacked Trilayer Graphene". United States. doi:10.1103/PhysRevX.2.011004.
@article{osti_1098997,
title = {Quantum Hall Effect and Semimetallic Behavior of Dual-Gated ABA-Stacked Trilayer Graphene},
author = {Henriksen, E. A. and Nandi, D. and Eisenstein, J. P.},
abstractNote = {},
doi = {10.1103/PhysRevX.2.011004},
journal = {Physical Review X},
number = 1,
volume = 2,
place = {United States},
year = {2012},
month = {1}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevX.2.011004

Citation Metrics:
Cited by: 30 works
Citation information provided by
Web of Science

Save / Share: