Quantum Hall Effect and Semimetallic Behavior of Dual-Gated ABA-Stacked Trilayer Graphene

Henriksen, E. A.; Nandi, D.; Eisenstein, J. P.

doi:10.1103/PhysRevX.2.011004

Title: Quantum Hall Effect and Semimetallic Behavior of Dual-Gated ABA-Stacked Trilayer Graphene

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Authors:: Henriksen, E. A.; Nandi, D.; Eisenstein, J. P.

Publication Date:: Thu Jan 19 00:00:00 EST 2012

Sponsoring Org.:: USDOE

OSTI Identifier:: 1098997

Resource Type:: Published Article

Journal Name:: Physical Review X

Additional Journal Information:: Journal Volume: 2; Journal Issue: 1; Journal ID: ISSN 2160-3308

Publisher:: American Physical Society

Country of Publication:: United States

Language:: English

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                    Henriksen, E. A., Nandi, D., and Eisenstein, J. P. Quantum Hall Effect and Semimetallic Behavior of Dual-Gated ABA-Stacked Trilayer Graphene.  United States: N. p., 2012. 
Web.  doi:10.1103/PhysRevX.2.011004.

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                    Henriksen, E. A., Nandi, D., & Eisenstein, J. P. Quantum Hall Effect and Semimetallic Behavior of Dual-Gated ABA-Stacked Trilayer Graphene.  United States.  https://doi.org/10.1103/PhysRevX.2.011004

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                    Henriksen, E. A., Nandi, D., and Eisenstein, J. P. Thu .  
"Quantum Hall Effect and Semimetallic Behavior of Dual-Gated ABA-Stacked Trilayer Graphene".  United States.  https://doi.org/10.1103/PhysRevX.2.011004.

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@article{osti_1098997,

  title        = {Quantum Hall Effect and Semimetallic Behavior of Dual-Gated ABA-Stacked Trilayer Graphene},

  author       = {Henriksen, E. A. and Nandi, D. and Eisenstein, J. P.},

  abstractNote = {},

  doi          = {10.1103/PhysRevX.2.011004},

  journal      = {Physical Review X},

  number       = 1,

  volume       = 2,

  place        = {United States},

  year         = {Thu Jan 19 00:00:00 EST 2012},

  month        = {Thu Jan 19 00:00:00 EST 2012}

}

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