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Title: Unconventional Quantum Hall Effect and Tunable Spin Hall Effect in Dirac Materials: Application to an Isolated MoS2 Trilayer

Authors:
; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1102031
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Name: Physical Review Letters Journal Volume: 110 Journal Issue: 6; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Li, Xiao, Zhang, Fan, and Niu, Qian. Unconventional Quantum Hall Effect and Tunable Spin Hall Effect in Dirac Materials: Application to an Isolated MoS2 Trilayer. United States: N. p., 2013. Web. doi:10.1103/PhysRevLett.110.066803.
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Li, Xiao, Zhang, Fan, & Niu, Qian. Unconventional Quantum Hall Effect and Tunable Spin Hall Effect in Dirac Materials: Application to an Isolated MoS2 Trilayer. United States. https://doi.org/10.1103/PhysRevLett.110.066803
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Li, Xiao, Zhang, Fan, and Niu, Qian. Tue . "Unconventional Quantum Hall Effect and Tunable Spin Hall Effect in Dirac Materials: Application to an Isolated MoS2 Trilayer". United States. https://doi.org/10.1103/PhysRevLett.110.066803.
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@article{osti_1102031,
title = {Unconventional Quantum Hall Effect and Tunable Spin Hall Effect in Dirac Materials: Application to an Isolated MoS2 Trilayer},
author = {Li, Xiao and Zhang, Fan and Niu, Qian},
abstractNote = {},
doi = {10.1103/PhysRevLett.110.066803},
journal = {Physical Review Letters},
number = 6,
volume = 110,
place = {United States},
year = {Tue Feb 05 00:00:00 EST 2013},
month = {Tue Feb 05 00:00:00 EST 2013}
}
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Journal Article:
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Accepted Manuscript (Publisher)
Publisher's Version of Record
https://doi.org/10.1103/PhysRevLett.110.066803
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