Quantum parity Hall effect in Bernal-stacked trilayer graphene
Abstract
The quantum Hall effect has recently been generalized from transport of conserved charges to include transport of other approximately conserved-state variables, including spin and valley, via spin- or valley-polarized boundary states with different chiralities. In this paper, we report a class of quantum Hall effect in Bernal- or ABA-stacked trilayer graphene (TLG), the quantum parity Hall (QPH) effect, in which boundary channels are distinguished by even or odd parity under the system’s mirror reflection symmetry. At the charge neutrality point, the longitudinal conductance is first quantized to at a small perpendicular magnetic field , establishing the presence of four edge channels. As increases, first decreases to , indicating spin-polarized counterpropagating edge states, and then, to approximately zero. These behaviors arise from level crossings between even- and odd-parity bulk Landau levels driven by exchange interactions with the underlying Fermi sea, which favor an ordinary insulator ground state in the strong limit and a spin-polarized state at intermediate fields. The transitions between spin-polarized and -unpolarized states can be tuned by varying Zeeman energy. Our findings demonstrate a topological phase that is protected by a gate-controllable symmetry and sensitive to Coulomb interactions.
- Authors:
- Publication Date:
- Research Org.:
- Univ. of Texas, Austin, TX (United States); Univ. of California, Riverside, CA (United States); Energy Frontier Research Centers (EFRC) (United States). Spins and Heat in Nanoscale Electronic Systems (SHINES)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; National Science Foundation (NSF); State of Florida; Ministry of Education, Culture, Sports, Science and Technology (MEXT); Japan Society for the Promotion of Science (JSPS); Welch Foundation; US Army Research Office (ARO)
- OSTI Identifier:
- 1510559
- Alternate Identifier(s):
- OSTI ID: 1614570
- Grant/Contract Number:
- FG03-02ER45958; SC0010597; SC0012670; F1473; W911NF-18-1-0416
- Resource Type:
- Published Article
- Journal Name:
- Proceedings of the National Academy of Sciences of the United States of America
- Additional Journal Information:
- Journal Name: Proceedings of the National Academy of Sciences of the United States of America Journal Volume: 116 Journal Issue: 21; Journal ID: ISSN 0027-8424
- Publisher:
- National Academy of Sciences
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; Science & technology - other topics; 2D materials; quantum Hall effect; topological insulators; symmetry-protected phases; trilayer graphene
Citation Formats
Stepanov, Petr, Barlas, Yafis, Che, Shi, Myhro, Kevin, Voigt, Greyson, Pi, Ziqi, Watanabe, Kenji, Taniguchi, Takashi, Smirnov, Dmitry, Zhang, Fan, Lake, Roger K., MacDonald, Allan H., and Lau, Chun Ning. Quantum parity Hall effect in Bernal-stacked trilayer graphene. United States: N. p., 2019.
Web. doi:10.1073/pnas.1820835116.
Stepanov, Petr, Barlas, Yafis, Che, Shi, Myhro, Kevin, Voigt, Greyson, Pi, Ziqi, Watanabe, Kenji, Taniguchi, Takashi, Smirnov, Dmitry, Zhang, Fan, Lake, Roger K., MacDonald, Allan H., & Lau, Chun Ning. Quantum parity Hall effect in Bernal-stacked trilayer graphene. United States. https://doi.org/10.1073/pnas.1820835116
Stepanov, Petr, Barlas, Yafis, Che, Shi, Myhro, Kevin, Voigt, Greyson, Pi, Ziqi, Watanabe, Kenji, Taniguchi, Takashi, Smirnov, Dmitry, Zhang, Fan, Lake, Roger K., MacDonald, Allan H., and Lau, Chun Ning. Fri .
"Quantum parity Hall effect in Bernal-stacked trilayer graphene". United States. https://doi.org/10.1073/pnas.1820835116.
@article{osti_1510559,
title = {Quantum parity Hall effect in Bernal-stacked trilayer graphene},
author = {Stepanov, Petr and Barlas, Yafis and Che, Shi and Myhro, Kevin and Voigt, Greyson and Pi, Ziqi and Watanabe, Kenji and Taniguchi, Takashi and Smirnov, Dmitry and Zhang, Fan and Lake, Roger K. and MacDonald, Allan H. and Lau, Chun Ning},
abstractNote = {The quantum Hall effect has recently been generalized from transport of conserved charges to include transport of other approximately conserved-state variables, including spin and valley, via spin- or valley-polarized boundary states with different chiralities. In this paper, we report a class of quantum Hall effect in Bernal- or ABA-stacked trilayer graphene (TLG), the quantum parity Hall (QPH) effect, in which boundary channels are distinguished by even or odd parity under the system’s mirror reflection symmetry. At the charge neutrality point, the longitudinal conductance σxx is first quantized to 4e2/hat a small perpendicular magnetic field B⊥, establishing the presence of four edge channels. As B⊥increases, σxx first decreases to 2e2/h, indicating spin-polarized counterpropagating edge states, and then, to approximately zero. These behaviors arise from level crossings between even- and odd-parity bulk Landau levels driven by exchange interactions with the underlying Fermi sea, which favor an ordinary insulator ground state in the strong B⊥ limit and a spin-polarized state at intermediate fields. The transitions between spin-polarized and -unpolarized states can be tuned by varying Zeeman energy. Our findings demonstrate a topological phase that is protected by a gate-controllable symmetry and sensitive to Coulomb interactions.},
doi = {10.1073/pnas.1820835116},
journal = {Proceedings of the National Academy of Sciences of the United States of America},
number = 21,
volume = 116,
place = {United States},
year = {Fri May 03 00:00:00 EDT 2019},
month = {Fri May 03 00:00:00 EDT 2019}
}
https://doi.org/10.1073/pnas.1820835116
Web of Science
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