Rapid low-temperature epitaxial growth using a hot-element assisted chemical vapor deposition process
Abstract
The invention provides a process for depositing an epitaxial layer on a crystalline substrate, comprising the steps of providing a chamber having an element capable of heating, introducing the substrate into the chamber, heating the element at a temperature sufficient to decompose a source gas, passing the source gas in contact with the element; and forming an epitaxial layer on the substrate.
- Inventors:
-
- Lafayette, CO
- Arvada, CO
- Boulder, CO
- Golden, CO
- Issue Date:
- Research Org.:
- Midwest Research Institute, Kansas City, MO (United States)
- OSTI Identifier:
- 873807
- Patent Number(s):
- 6251183
- Assignee:
- Midwest Research Institute (Kansas City, MO)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
- DOE Contract Number:
- AC36-98GO10337
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- rapid; low-temperature; epitaxial; growth; hot-element; assisted; chemical; vapor; deposition; process; provides; depositing; layer; crystalline; substrate; comprising; steps; providing; chamber; element; capable; heating; introducing; temperature; sufficient; decompose; source; gas; passing; contact; forming; assisted chemical; chemical vapor; vapor deposition; temperature sufficient; deposition process; epitaxial layer; epitaxial growth; source gas; crystalline substrate; element capable; /117/
Citation Formats
Iwancizko, Eugene, Jones, Kim M, Crandall, Richard S, Nelson, Brent P, and Mahan, Archie Harvin. Rapid low-temperature epitaxial growth using a hot-element assisted chemical vapor deposition process. United States: N. p., 2001.
Web.
Iwancizko, Eugene, Jones, Kim M, Crandall, Richard S, Nelson, Brent P, & Mahan, Archie Harvin. Rapid low-temperature epitaxial growth using a hot-element assisted chemical vapor deposition process. United States.
Iwancizko, Eugene, Jones, Kim M, Crandall, Richard S, Nelson, Brent P, and Mahan, Archie Harvin. Mon .
"Rapid low-temperature epitaxial growth using a hot-element assisted chemical vapor deposition process". United States. https://www.osti.gov/servlets/purl/873807.
@article{osti_873807,
title = {Rapid low-temperature epitaxial growth using a hot-element assisted chemical vapor deposition process},
author = {Iwancizko, Eugene and Jones, Kim M and Crandall, Richard S and Nelson, Brent P and Mahan, Archie Harvin},
abstractNote = {The invention provides a process for depositing an epitaxial layer on a crystalline substrate, comprising the steps of providing a chamber having an element capable of heating, introducing the substrate into the chamber, heating the element at a temperature sufficient to decompose a source gas, passing the source gas in contact with the element; and forming an epitaxial layer on the substrate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 2001},
month = {Mon Jan 01 00:00:00 EST 2001}
}
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