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Title: Low temperature junction growth using hot-wire chemical vapor deposition

Abstract

A system and a process for forming a semi-conductor device, and solar cells (10) formed thereby. The process includes preparing a substrate (12) for deposition of a junction layer (14); forming the junction layer (14) on the substrate (12) using hot wire chemical vapor deposition; and, finishing the semi-conductor device.

Inventors:
; ; ; ;
Issue Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1118271
Patent Number(s):
8642450
Application Number:
12/742,001
Assignee:
Alliance for Sustainable Energy, LLC (Golden, CO)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
DOE Contract Number:  
AC36-99GO10337
Resource Type:
Patent
Resource Relation:
Patent File Date: 2007 Nov 09
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY

Citation Formats

Wang, Qi, Page, Matthew, Iwaniczko, Eugene, Wang, Tihu, and Yan, Yanfa. Low temperature junction growth using hot-wire chemical vapor deposition. United States: N. p., 2014. Web.
Wang, Qi, Page, Matthew, Iwaniczko, Eugene, Wang, Tihu, & Yan, Yanfa. Low temperature junction growth using hot-wire chemical vapor deposition. United States.
Wang, Qi, Page, Matthew, Iwaniczko, Eugene, Wang, Tihu, and Yan, Yanfa. Tue . "Low temperature junction growth using hot-wire chemical vapor deposition". United States. https://www.osti.gov/servlets/purl/1118271.
@article{osti_1118271,
title = {Low temperature junction growth using hot-wire chemical vapor deposition},
author = {Wang, Qi and Page, Matthew and Iwaniczko, Eugene and Wang, Tihu and Yan, Yanfa},
abstractNote = {A system and a process for forming a semi-conductor device, and solar cells (10) formed thereby. The process includes preparing a substrate (12) for deposition of a junction layer (14); forming the junction layer (14) on the substrate (12) using hot wire chemical vapor deposition; and, finishing the semi-conductor device.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {2}
}

Patent:

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