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Title: Hot-filament chemical vapor deposition chamber and process with multiple gas inlets

Abstract

A thin film deposition method uses a vacuum confinement cup that employs a dense hot filament and multiple gas inlets. At least one reactant gas is introduced into the confinement cup both near and spaced apart from the heated filament. An electrode inside the confinement cup is used to generate plasma for film deposition. The method is used to deposit advanced thin films (such as silicon based thin films) at a high quality and at a high deposition rate.

Inventors:
;
Issue Date:
Research Org.:
University Of Toledo, Toledo, OH (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1174916
Patent Number(s):
6755151
Application Number:
10/616,873
Assignee:
University Of Toledo
Patent Classifications (CPCs):
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
DOE Contract Number:  
ZAF-8-17619-14, ADD-8-18669-08, NDJ-2-30630-08
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Deng, Xunming, and Povolny, Henry S. Hot-filament chemical vapor deposition chamber and process with multiple gas inlets. United States: N. p., 2004. Web.
Deng, Xunming, & Povolny, Henry S. Hot-filament chemical vapor deposition chamber and process with multiple gas inlets. United States.
Deng, Xunming, and Povolny, Henry S. Tue . "Hot-filament chemical vapor deposition chamber and process with multiple gas inlets". United States. https://www.osti.gov/servlets/purl/1174916.
@article{osti_1174916,
title = {Hot-filament chemical vapor deposition chamber and process with multiple gas inlets},
author = {Deng, Xunming and Povolny, Henry S.},
abstractNote = {A thin film deposition method uses a vacuum confinement cup that employs a dense hot filament and multiple gas inlets. At least one reactant gas is introduced into the confinement cup both near and spaced apart from the heated filament. An electrode inside the confinement cup is used to generate plasma for film deposition. The method is used to deposit advanced thin films (such as silicon based thin films) at a high quality and at a high deposition rate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2004},
month = {6}
}

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Works referenced in this record:

High Deposition Rate of Polycrystalline Silicon Thin Films Prepared by Hot Wire Cell Method
journal, January 1999