Hot-filament chemical vapor deposition chamber and process with multiple gas inlets
Abstract
A thin film deposition method uses a vacuum confinement cup that employs a dense hot filament and multiple gas inlets. At least one reactant gas is introduced into the confinement cup both near and spaced apart from the heated filament. An electrode inside the confinement cup is used to generate plasma for film deposition. The method is used to deposit advanced thin films (such as silicon based thin films) at a high quality and at a high deposition rate.
- Inventors:
- Issue Date:
- Research Org.:
- University Of Toledo, Toledo, OH (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1174916
- Patent Number(s):
- 6755151
- Application Number:
- 10/616,873
- Assignee:
- University Of Toledo
- Patent Classifications (CPCs):
-
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
- DOE Contract Number:
- ZAF-8-17619-14, ADD-8-18669-08, NDJ-2-30630-08
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Deng, Xunming, and Povolny, Henry S. Hot-filament chemical vapor deposition chamber and process with multiple gas inlets. United States: N. p., 2004.
Web.
Deng, Xunming, & Povolny, Henry S. Hot-filament chemical vapor deposition chamber and process with multiple gas inlets. United States.
Deng, Xunming, and Povolny, Henry S. Tue .
"Hot-filament chemical vapor deposition chamber and process with multiple gas inlets". United States. https://www.osti.gov/servlets/purl/1174916.
@article{osti_1174916,
title = {Hot-filament chemical vapor deposition chamber and process with multiple gas inlets},
author = {Deng, Xunming and Povolny, Henry S.},
abstractNote = {A thin film deposition method uses a vacuum confinement cup that employs a dense hot filament and multiple gas inlets. At least one reactant gas is introduced into the confinement cup both near and spaced apart from the heated filament. An electrode inside the confinement cup is used to generate plasma for film deposition. The method is used to deposit advanced thin films (such as silicon based thin films) at a high quality and at a high deposition rate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jun 29 00:00:00 EDT 2004},
month = {Tue Jun 29 00:00:00 EDT 2004}
}
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Works referenced in this record:
High Deposition Rate of Polycrystalline Silicon Thin Films Prepared by Hot Wire Cell Method
journal, January 1999
- Ichikawa, Mitsuru; Takeshita, Jun; Yamada, Akira
- Japanese Journal of Applied Physics, Vol. 38, Issue Part 2, No. 1A/B