Magnetron sputtered boron films and Ti/B multilayer structures
Abstract
A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence.
- Inventors:
-
- Livermore, CA
- Issue Date:
- Research Org.:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- OSTI Identifier:
- 869748
- Patent Number(s):
- 5389445
- Assignee:
- Regents of University of California (Oakland, CA)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
- DOE Contract Number:
- W-7405-ENG-48
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- magnetron; sputtered; boron; films; multilayer; structures; method; described; production; titanium; sputter; deposition; amorphous; contain; morphological; growth; features; unlike; found; prepared; various; physical; vapor; processes; requires; density; crystalline; target; hot; isostatic; pressing; useful; ultra-thin; band; pass; filters; z; element; mirrors; enhance; reflectivity; grazing; normal; incidence; normal incidence; magnetron sputter; pass filters; morphological growth; multilayer structures; amorphous boron; band pass; deposition method; sputter deposition; boron films; vapor deposition; deposition process; hot isostatic; physical vapor; isostatic pressing; deposition processes; sputter target; pass filter; multilayer structure; sputtered boron; method requires; z element; ultra-thin band; various physical; growth features; crystalline boron; density crystalline; boron sputter; films prepared; enhance reflectivity; films contain; magnetron sputtered; sputter deposit; /428/359/
Citation Formats
Makowiecki, Daniel M, and Jankowski, Alan F. Magnetron sputtered boron films and Ti/B multilayer structures. United States: N. p., 1995.
Web.
Makowiecki, Daniel M, & Jankowski, Alan F. Magnetron sputtered boron films and Ti/B multilayer structures. United States.
Makowiecki, Daniel M, and Jankowski, Alan F. Sun .
"Magnetron sputtered boron films and Ti/B multilayer structures". United States. https://www.osti.gov/servlets/purl/869748.
@article{osti_869748,
title = {Magnetron sputtered boron films and Ti/B multilayer structures},
author = {Makowiecki, Daniel M and Jankowski, Alan F},
abstractNote = {A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sun Jan 01 00:00:00 EST 1995},
month = {Sun Jan 01 00:00:00 EST 1995}
}
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