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Title: Magnetron sputtered boron films and Ti/B multilayer structures

Abstract

A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence. 6 figs.

Inventors:
;
Issue Date:
Research Org.:
University of California
OSTI Identifier:
27730
Patent Number(s):
5,389,445
Application Number:
PAN: 8-048,373
Assignee:
Univ. of California, Oakland, CA (United States)
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 14 Feb 1995
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BORON; FABRICATION; TITANIUM; COMPOSITE MATERIALS; SPUTTERING; USES; THIN FILMS

Citation Formats

Makowiecki, D M, and Jankowski, A F. Magnetron sputtered boron films and Ti/B multilayer structures. United States: N. p., 1995. Web.
Makowiecki, D M, & Jankowski, A F. Magnetron sputtered boron films and Ti/B multilayer structures. United States.
Makowiecki, D M, and Jankowski, A F. Tue . "Magnetron sputtered boron films and Ti/B multilayer structures". United States.
@article{osti_27730,
title = {Magnetron sputtered boron films and Ti/B multilayer structures},
author = {Makowiecki, D M and Jankowski, A F},
abstractNote = {A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence. 6 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1995},
month = {2}
}