Magnetron sputtered boron films and Ti/B multilayer structures
Abstract
A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence. 6 figs.
- Inventors:
- Issue Date:
- Research Org.:
- Univ. of California (United States)
- OSTI Identifier:
- 27730
- Patent Number(s):
- 5389445
- Application Number:
- PAN: 8-048,373
- Assignee:
- Univ. of California, Oakland, CA (United States)
- DOE Contract Number:
- W-7405-ENG-48
- Resource Type:
- Patent
- Resource Relation:
- Other Information: PBD: 14 Feb 1995
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; BORON; FABRICATION; TITANIUM; COMPOSITE MATERIALS; SPUTTERING; USES; THIN FILMS
Citation Formats
Makowiecki, D M, and Jankowski, A F. Magnetron sputtered boron films and Ti/B multilayer structures. United States: N. p., 1995.
Web.
Makowiecki, D M, & Jankowski, A F. Magnetron sputtered boron films and Ti/B multilayer structures. United States.
Makowiecki, D M, and Jankowski, A F. Tue .
"Magnetron sputtered boron films and Ti/B multilayer structures". United States.
@article{osti_27730,
title = {Magnetron sputtered boron films and Ti/B multilayer structures},
author = {Makowiecki, D M and Jankowski, A F},
abstractNote = {A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence. 6 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1995},
month = {2}
}
Search for the full text at the U.S. Patent and Trademark Office
Note: You will be redirected to the USPTO site, which may require a pop-up blocker to be deactivated to view the patent. If so, you will need to manually turn off your browser's pop-up blocker, typically found within the browser settings. (See DOE Patents FAQs for more information.)