Hole blocking, electron transporting and window layer for optimized CuIn(1−x)Ga(x)Se2 solar cells
Abstract
Thin-film photovoltaic devices and methods of their use and manufacture are disclosed. More particularly, polycrystalline CuIn(1-x)GaxSe2 (CIGS) based thin-film photovoltaic devices having independently tunable sublayers are disclosed. Also provided are methods of producing an n-doped graphene.
- Inventors:
- Issue Date:
- Research Org.:
- Brookhaven National Laboratory (BNL), Upton, NY (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1568534
- Patent Number(s):
- 10333017
- Application Number:
- 15/127,996
- Assignee:
- Brookhaven Science Associates, LLC (Upton, NY); The Research Foundation of State University of New York (Stony Brook, NY)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- AC02-98CH10886; SC0012704
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 03/20/2015
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE
Citation Formats
Dissanayake, Nanditha M., Eisaman, Matthew, Ashraf, Ahsan, Goroff, Nancy, and Ang, Xiuzhu. Hole blocking, electron transporting and window layer for optimized CuIn(1−x)Ga(x)Se2 solar cells. United States: N. p., 2019.
Web.
Dissanayake, Nanditha M., Eisaman, Matthew, Ashraf, Ahsan, Goroff, Nancy, & Ang, Xiuzhu. Hole blocking, electron transporting and window layer for optimized CuIn(1−x)Ga(x)Se2 solar cells. United States.
Dissanayake, Nanditha M., Eisaman, Matthew, Ashraf, Ahsan, Goroff, Nancy, and Ang, Xiuzhu. Tue .
"Hole blocking, electron transporting and window layer for optimized CuIn(1−x)Ga(x)Se2 solar cells". United States. https://www.osti.gov/servlets/purl/1568534.
@article{osti_1568534,
title = {Hole blocking, electron transporting and window layer for optimized CuIn(1−x)Ga(x)Se2 solar cells},
author = {Dissanayake, Nanditha M. and Eisaman, Matthew and Ashraf, Ahsan and Goroff, Nancy and Ang, Xiuzhu},
abstractNote = {Thin-film photovoltaic devices and methods of their use and manufacture are disclosed. More particularly, polycrystalline CuIn(1-x)GaxSe2 (CIGS) based thin-film photovoltaic devices having independently tunable sublayers are disclosed. Also provided are methods of producing an n-doped graphene.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jun 25 00:00:00 EDT 2019},
month = {Tue Jun 25 00:00:00 EDT 2019}
}
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Works referenced in this record:
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patent-application, February 2014
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Quantum Dot-Fullerene Junction Optoelectronic Devices
patent-application, September 2012
- Klem, Ethan; Lewis, John
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