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Title: Dilute Group III-V nitride intermediate band solar cells with contact blocking layers

Abstract

An intermediate band solar cell (IBSC) is provided including a p-n junction based on dilute III-V nitride materials and a pair of contact blocking layers positioned on opposite surfaces of the p-n junction for electrically isolating the intermediate band of the p-n junction by blocking the charge transport in the intermediate band without affecting the electron and hole collection efficiency of the p-n junction, thereby increasing open circuit voltage (V.sub.OC) of the IBSC and increasing the photocurrent by utilizing the intermediate band to absorb photons with energy below the band gap of the absorber layers of the IBSC. Hence, the overall power conversion efficiency of a IBSC will be much higher than an conventional single junction solar cell. The p-n junction absorber layers of the IBSC may further have compositionally graded nitrogen concentrations to provide an electric field for more efficient charge collection.

Inventors:
 [1];  [2]
  1. Kensington, CA
  2. Lafayette, CA
Issue Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1058897
Patent Number(s):
8232470
Application Number:
12/558,446
Assignee:
Rosestreet Labs Energy, Inc. (Phoenix, AZ)
Patent Classifications (CPCs):
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
AC02-05CH11231
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY

Citation Formats

Walukiewicz, Wladyslaw, and Yu, Kin Man. Dilute Group III-V nitride intermediate band solar cells with contact blocking layers. United States: N. p., 2012. Web.
Walukiewicz, Wladyslaw, & Yu, Kin Man. Dilute Group III-V nitride intermediate band solar cells with contact blocking layers. United States.
Walukiewicz, Wladyslaw, and Yu, Kin Man. Tue . "Dilute Group III-V nitride intermediate band solar cells with contact blocking layers". United States. https://www.osti.gov/servlets/purl/1058897.
@article{osti_1058897,
title = {Dilute Group III-V nitride intermediate band solar cells with contact blocking layers},
author = {Walukiewicz, Wladyslaw and Yu, Kin Man},
abstractNote = {An intermediate band solar cell (IBSC) is provided including a p-n junction based on dilute III-V nitride materials and a pair of contact blocking layers positioned on opposite surfaces of the p-n junction for electrically isolating the intermediate band of the p-n junction by blocking the charge transport in the intermediate band without affecting the electron and hole collection efficiency of the p-n junction, thereby increasing open circuit voltage (V.sub.OC) of the IBSC and increasing the photocurrent by utilizing the intermediate band to absorb photons with energy below the band gap of the absorber layers of the IBSC. Hence, the overall power conversion efficiency of a IBSC will be much higher than an conventional single junction solar cell. The p-n junction absorber layers of the IBSC may further have compositionally graded nitrogen concentrations to provide an electric field for more efficient charge collection.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2012},
month = {7}
}

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Works referenced in this record:

Survey of intermediate band materials based on ZnS and ZnTe semiconductors
journal, March 2006


IBPOWER: Intermediate band materials and solar cells for photovoltaics with high efficiency and reduced cost
conference, June 2009


Effects of proton irradiation on n+p InGaP solar cells
journal, March 2002


III N V semiconductors for solar photovoltaic applications
journal, July 2002


Intermediate-band solar cells based on quantum dot supracrystals
journal, October 2007


Present status of intermediate band solar cell research
journal, March 2004