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Title: Dilute group III-V nitride intermediate band solar cells with contact blocking layers

Abstract

An intermediate band solar cell (IBSC) is provided including a p-n junction based on dilute III-V nitride materials and a pair of contact blocking layers positioned on opposite surfaces of the p-n junction for electrically isolating the intermediate band of the p-n junction by blocking the charge transport in the intermediate band without affecting the electron and hole collection efficiency of the p-n junction, thereby increasing open circuit voltage (V.sub.OC) of the IBSC and increasing the photocurrent by utilizing the intermediate band to absorb photons with energy below the band gap of the absorber layers of the IBSC. Hence, the overall power conversion efficiency of a IBSC will be much higher than an conventional single junction solar cell. The p-n junction absorber layers of the IBSC may further have compositionally graded nitrogen concentrations to provide an electric field for more efficient charge collection.

Inventors:
;
Issue Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1170742
Patent Number(s):
8,962,992
Application Number:
13/529,090
Assignee:
RoseStreet Labs Energy, Inc. (Phoenix, AZ)
DOE Contract Number:  
AC02-05CH11231
Resource Type:
Patent
Resource Relation:
Patent File Date: 2012 Jun 21
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY

Citation Formats

Walukiewicz, Wladyslaw, and Yu, Kin Man. Dilute group III-V nitride intermediate band solar cells with contact blocking layers. United States: N. p., 2015. Web.
Walukiewicz, Wladyslaw, & Yu, Kin Man. Dilute group III-V nitride intermediate band solar cells with contact blocking layers. United States.
Walukiewicz, Wladyslaw, and Yu, Kin Man. Tue . "Dilute group III-V nitride intermediate band solar cells with contact blocking layers". United States. https://www.osti.gov/servlets/purl/1170742.
@article{osti_1170742,
title = {Dilute group III-V nitride intermediate band solar cells with contact blocking layers},
author = {Walukiewicz, Wladyslaw and Yu, Kin Man},
abstractNote = {An intermediate band solar cell (IBSC) is provided including a p-n junction based on dilute III-V nitride materials and a pair of contact blocking layers positioned on opposite surfaces of the p-n junction for electrically isolating the intermediate band of the p-n junction by blocking the charge transport in the intermediate band without affecting the electron and hole collection efficiency of the p-n junction, thereby increasing open circuit voltage (V.sub.OC) of the IBSC and increasing the photocurrent by utilizing the intermediate band to absorb photons with energy below the band gap of the absorber layers of the IBSC. Hence, the overall power conversion efficiency of a IBSC will be much higher than an conventional single junction solar cell. The p-n junction absorber layers of the IBSC may further have compositionally graded nitrogen concentrations to provide an electric field for more efficient charge collection.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {2}
}

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Works referenced in this record:

IBPOWER: Intermediate band materials and solar cells for photovoltaics with high efficiency and reduced cost
conference, June 2009

  • Marti, A.; Antolin, E.; Linares, P. G.
  • 2009 34th IEEE Photovoltaic Specialists Conference (PVSC 2009), 2009 34th IEEE Photovoltaic Specialists Conference (PVSC)
  • DOI: 10.1109/PVSC.2009.5411265

Intermediate-band solar cells based on quantum dot supracrystals
journal, October 2007

  • Shao, Q.; Balandin, A. A.; Fedoseyev, A. I.
  • Applied Physics Letters, Vol. 91, Issue 16
  • DOI: 10.1063/1.2799172

Survey of intermediate band materials based on ZnS and ZnTe semiconductors
journal, March 2006


Signature of intermediate band materials from luminescence measurements
conference, January 2005

  • Ekins-Daukes, N. J.; Honsberg, C. B.; Yamaguchi, M.
  • Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference, 2005.
  • DOI: 10.1109/PVSC.2005.1488066

Quantum dot intermediate band solar cell material systems with negligible valence band offsets
conference, January 2005

  • Levy, M. Y.; Honsberg, C.; Marti, A.
  • Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference, 2005.
  • DOI: 10.1109/PVSC.2005.1488076

III N V semiconductors for solar photovoltaic applications
journal, July 2002


Effects of proton irradiation on n+p InGaP solar cells
journal, March 2002

  • Dharmarasu, Nethaji; Khan, A.; Yamaguchi, Masafumi
  • Journal of Applied Physics, Vol. 91, Issue 5
  • DOI: 10.1063/1.1445276

A GaAs solar cell with an efficiency of 26.2% at 1000 suns and 25.0% at 2000 suns
journal, May 2001

  • Algora, C.; Ortiz, E.; Rey-Stolle, I.
  • IEEE Transactions on Electron Devices, Vol. 48, Issue 5
  • DOI: 10.1109/16.918225

Quantum dot intermediate band solar cell
conference, January 2000

  • Marti, A.; Cuadra, L.; Luque, A.
  • 28th IEEE Photovoltaic Specialists Conference, Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)
  • DOI: 10.1109/PVSC.2000.916039