Doping control by ALD surface functionalization

Elam, Jeffrey W.; Yanguas-Gil, Angel

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Title: Doping control by ALD surface functionalization

Abstract

Systems and methods for producing a material of desired thickness. Deposition techniques such as atomic layer deposition are alter to control the thickness of deposited material. A funtionalization species inhibits the deposition reaction.

Inventors:: Elam, Jeffrey W.; Yanguas-Gil, Angel

Issue Date:: Tue Feb 10 00:00:00 EST 2015

Research Org.:: Argonne National Laboratory (ANL), Argonne, IL (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1350956

Patent Number(s):: 8951615

Application Number:: 13/370,602

Assignee:: UChicago Argonne, LLC (Chicago, IL)

Patent Classifications (CPCs):: C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL

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C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
C23C16/08 - from metal halides
C23C16/45553 - {characterized by the use of precursors specially adapted for ALD}

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DOE Contract Number:: AC02-06CH11357

Resource Type:: Patent

Resource Relation:: Patent File Date: 2012 Feb 10

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Elam, Jeffrey W., and Yanguas-Gil, Angel. Doping control by ALD surface functionalization.  United States: N. p., 2015. 
        Web.

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                    Elam, Jeffrey W., & Yanguas-Gil, Angel. Doping control by ALD surface functionalization.  United States.

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                    Elam, Jeffrey W., and Yanguas-Gil, Angel. Tue .  
        "Doping control by ALD surface functionalization".  United States.  https://www.osti.gov/servlets/purl/1350956.

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@article{osti_1350956,

  title        = {Doping control by ALD surface functionalization},

  author       = {Elam, Jeffrey W. and Yanguas-Gil, Angel},

  abstractNote = {Systems and methods for producing a material of desired thickness. Deposition techniques such as atomic layer deposition are alter to control the thickness of deposited material. A funtionalization species inhibits the deposition reaction.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {Tue Feb 10 00:00:00 EST 2015},

  month        = {Tue Feb 10 00:00:00 EST 2015}

}

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Works referenced in this record:

Process for improved quality of CVD copper films
patent, June 1994

Norman, John Anthony Thomas; Hochberg, Arthur Kenneth; Roberts, David A.
US Patent Document 5,322,712
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/5322712

Cyclical deposition of refractory metal silicon nitride
patent, July 2006

Chung, Hua; Chen, Ling; Chin, Barry
US Patent Document 7,081,271
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7081271

Methods for coating and filling high aspect ratio recessed features
patent, September 2009

Abelson, John R.; Jayaraman, Sreenivas; Girolami, Gregory S.
US Patent Document 7,592,254
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7592254

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Title: Doping control by ALD surface functionalization

Abstract

Citation Formats

Process for improved quality of CVD copper films patent, June 1994

Cyclical deposition of refractory metal silicon nitride patent, July 2006

Methods for coating and filling high aspect ratio recessed features patent, September 2009

Process for improved quality of CVD copper films
patent, June 1994

Cyclical deposition of refractory metal silicon nitride
patent, July 2006

Methods for coating and filling high aspect ratio recessed features
patent, September 2009