Fast method for reactor and feature scale coupling in ALD and CVD
Abstract
Transport and surface chemistry of certain deposition techniques is modeled. Methods provide a model of the transport inside nanostructures as a single-particle discrete Markov chain process. This approach decouples the complexity of the surface chemistry from the transport model, thus allowing its application under general surface chemistry conditions, including atomic layer deposition (ALD) and chemical vapor deposition (CVD). Methods provide for determination of determine statistical information of the trajectory of individual molecules, such as the average interaction time or the number of wall collisions for molecules entering the nanostructures as well as to track the relative contributions to thin-film growth of different independent reaction pathways at each point of the feature.
- Inventors:
- Issue Date:
- Research Org.:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1374542
- Patent Number(s):
- 9727672
- Application Number:
- 14/633,025
- Assignee:
- UCHICAGO ARGONNE, LLC
- Patent Classifications (CPCs):
-
G - PHYSICS G06 - COMPUTING G06F - ELECTRIC DIGITAL DATA PROCESSING
G - PHYSICS G16 - INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTED FOR SPECIFIC APPLICATION FIELDS G16C - COMPUTATIONAL CHEMISTRY
- DOE Contract Number:
- AC02-06CH11357
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2015 Feb 26
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; 36 MATERIALS SCIENCE
Citation Formats
Yanguas-Gil, Angel, and Elam, Jeffrey W. Fast method for reactor and feature scale coupling in ALD and CVD. United States: N. p., 2017.
Web.
Yanguas-Gil, Angel, & Elam, Jeffrey W. Fast method for reactor and feature scale coupling in ALD and CVD. United States.
Yanguas-Gil, Angel, and Elam, Jeffrey W. Tue .
"Fast method for reactor and feature scale coupling in ALD and CVD". United States. https://www.osti.gov/servlets/purl/1374542.
@article{osti_1374542,
title = {Fast method for reactor and feature scale coupling in ALD and CVD},
author = {Yanguas-Gil, Angel and Elam, Jeffrey W.},
abstractNote = {Transport and surface chemistry of certain deposition techniques is modeled. Methods provide a model of the transport inside nanostructures as a single-particle discrete Markov chain process. This approach decouples the complexity of the surface chemistry from the transport model, thus allowing its application under general surface chemistry conditions, including atomic layer deposition (ALD) and chemical vapor deposition (CVD). Methods provide for determination of determine statistical information of the trajectory of individual molecules, such as the average interaction time or the number of wall collisions for molecules entering the nanostructures as well as to track the relative contributions to thin-film growth of different independent reaction pathways at each point of the feature.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2017},
month = {8}
}
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