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Title: Fast method for reactor and feature scale coupling in ALD and CVD

Abstract

Transport and surface chemistry of certain deposition techniques is modeled. Methods provide a model of the transport inside nanostructures as a single-particle discrete Markov chain process. This approach decouples the complexity of the surface chemistry from the transport model, thus allowing its application under general surface chemistry conditions, including atomic layer deposition (ALD) and chemical vapor deposition (CVD). Methods provide for determination of determine statistical information of the trajectory of individual molecules, such as the average interaction time or the number of wall collisions for molecules entering the nanostructures as well as to track the relative contributions to thin-film growth of different independent reaction pathways at each point of the feature.

Inventors:
;
Issue Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1374542
Patent Number(s):
9727672
Application Number:
14/633,025
Assignee:
UCHICAGO ARGONNE, LLC
Patent Classifications (CPCs):
G - PHYSICS G16 - INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTED FOR SPECIFIC APPLICATION FIELDS G16C - COMPUTATIONAL CHEMISTRY
G - PHYSICS G06 - COMPUTING G06F - ELECTRIC DIGITAL DATA PROCESSING
DOE Contract Number:  
AC02-06CH11357
Resource Type:
Patent
Resource Relation:
Patent File Date: 2015 Feb 26
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; 36 MATERIALS SCIENCE

Citation Formats

Yanguas-Gil, Angel, and Elam, Jeffrey W. Fast method for reactor and feature scale coupling in ALD and CVD. United States: N. p., 2017. Web.
Yanguas-Gil, Angel, & Elam, Jeffrey W. Fast method for reactor and feature scale coupling in ALD and CVD. United States.
Yanguas-Gil, Angel, and Elam, Jeffrey W. Tue . "Fast method for reactor and feature scale coupling in ALD and CVD". United States. https://www.osti.gov/servlets/purl/1374542.
@article{osti_1374542,
title = {Fast method for reactor and feature scale coupling in ALD and CVD},
author = {Yanguas-Gil, Angel and Elam, Jeffrey W.},
abstractNote = {Transport and surface chemistry of certain deposition techniques is modeled. Methods provide a model of the transport inside nanostructures as a single-particle discrete Markov chain process. This approach decouples the complexity of the surface chemistry from the transport model, thus allowing its application under general surface chemistry conditions, including atomic layer deposition (ALD) and chemical vapor deposition (CVD). Methods provide for determination of determine statistical information of the trajectory of individual molecules, such as the average interaction time or the number of wall collisions for molecules entering the nanostructures as well as to track the relative contributions to thin-film growth of different independent reaction pathways at each point of the feature.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2017},
month = {8}
}

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Works referenced in this record:

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  • Yanguas-Gil, A.; Kumar, N.; Yang, Y.
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 27, Issue 5, p. 1244-1248
  • https://doi.org/10.1116/1.3207746

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