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Title: Semiconductor films on flexible iridium substrates

Abstract

A laminate semiconductor article includes a flexible substrate, an optional biaxially textured oxide buffer system on the flexible substrate, a biaxially textured Ir-based buffer layer on the substrate or the buffer system, and an epitaxial layer of a semiconductor. Ir can serve as a substrate with an epitaxial layer of a semiconductor thereon.

Inventors:
Issue Date:
Research Org.:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1175296
Patent Number(s):
6872988
Application Number:
10/808,815
Assignee:
UT-Battelle, LLC (Oak Ridge, TN)
Patent Classifications (CPCs):
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
AC05-00OR22725
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Goyal, Amit. Semiconductor films on flexible iridium substrates. United States: N. p., 2005. Web.
Goyal, Amit. Semiconductor films on flexible iridium substrates. United States.
Goyal, Amit. Tue . "Semiconductor films on flexible iridium substrates". United States. https://www.osti.gov/servlets/purl/1175296.
@article{osti_1175296,
title = {Semiconductor films on flexible iridium substrates},
author = {Goyal, Amit},
abstractNote = {A laminate semiconductor article includes a flexible substrate, an optional biaxially textured oxide buffer system on the flexible substrate, a biaxially textured Ir-based buffer layer on the substrate or the buffer system, and an epitaxial layer of a semiconductor. Ir can serve as a substrate with an epitaxial layer of a semiconductor thereon.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Mar 29 00:00:00 EST 2005},
month = {Tue Mar 29 00:00:00 EST 2005}
}

Works referenced in this record: