Title: Volume-scalable high-brightness three-dimensional visible light source

Abstract

A volume-scalable, high-brightness, electrically driven visible light source comprises a three-dimensional photonic crystal (3DPC) comprising one or more direct bandgap semiconductors. The improved light emission performance of the invention is achieved based on the enhancement of radiative emission of light emitters placed inside a 3DPC due to the strong modification of the photonic density-of-states engendered by the 3DPC.

Inventors:

Subramania, Ganapathi; Fischer, Arthur J; Wang, George T; Li, Qiming

Issue Date:

Tue Feb 18 00:00:00 EST 2014

Research Org.:

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1124650

Patent Number(s):

8653500

Application Number:

13/231,156

Assignee:

Sandia Corporation (Albuquerque, NM)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L2933/0083 - Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
H01L33/06 - within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L33/105 - {with a resonant cavity structure}
H01L33/20 - with a particular shape, e.g. curved or truncated substrate
H01L33/24 - of the light emitting region, e.g. non-planar junction
H01L33/32 - containing nitrogen
H01L33/502 - {Wavelength conversion materials}

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DOE Contract Number:  

AC04-94AL85000

Resource Type:

Patent

Country of Publication:

United States

Language:

English

Subject:

42 ENGINEERING