Broadband visible light source based on AllnGaN light emitting diodes
Abstract
A visible light source device is described based on a light emitting diode and a nanocluster-based film. The light emitting diode utilizes a semiconductor quantum well structure between n-type and p-type semiconductor materials on the top surface a substrate such as sapphire. The nanocluster-based film is deposited on the bottom surface of the substrate and can be derived from a solution of MoS.sub.2, MoSe.sub.2, WS.sub.2, and WSe.sub.2 particles of size greater than approximately 2 nm in diameter and less than approximately 15 nm in diameter, having an absorption wavelength greater than approximately 300 nm and less than approximately 650 nm.
- Inventors:
- Issue Date:
- Research Org.:
- Sandia National Lab. (SNL-CA), Livermore, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1174635
- Patent Number(s):
- 6665329
- Application Number:
- 10/165,824
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Crawford, Mary H., and Nelson, Jeffrey S. Broadband visible light source based on AllnGaN light emitting diodes. United States: N. p., 2003.
Web.
Crawford, Mary H., & Nelson, Jeffrey S. Broadband visible light source based on AllnGaN light emitting diodes. United States.
Crawford, Mary H., and Nelson, Jeffrey S. Tue .
"Broadband visible light source based on AllnGaN light emitting diodes". United States. https://www.osti.gov/servlets/purl/1174635.
@article{osti_1174635,
title = {Broadband visible light source based on AllnGaN light emitting diodes},
author = {Crawford, Mary H. and Nelson, Jeffrey S.},
abstractNote = {A visible light source device is described based on a light emitting diode and a nanocluster-based film. The light emitting diode utilizes a semiconductor quantum well structure between n-type and p-type semiconductor materials on the top surface a substrate such as sapphire. The nanocluster-based film is deposited on the bottom surface of the substrate and can be derived from a solution of MoS.sub.2, MoSe.sub.2, WS.sub.2, and WSe.sub.2 particles of size greater than approximately 2 nm in diameter and less than approximately 15 nm in diameter, having an absorption wavelength greater than approximately 300 nm and less than approximately 650 nm.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2003},
month = {12}
}
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