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Title: Broadband visible light source based on AllnGaN light emitting diodes

Abstract

A visible light source device is described based on a light emitting diode and a nanocluster-based film. The light emitting diode utilizes a semiconductor quantum well structure between n-type and p-type semiconductor materials on the top surface a substrate such as sapphire. The nanocluster-based film is deposited on the bottom surface of the substrate and can be derived from a solution of MoS.sub.2, MoSe.sub.2, WS.sub.2, and WSe.sub.2 particles of size greater than approximately 2 nm in diameter and less than approximately 15 nm in diameter, having an absorption wavelength greater than approximately 300 nm and less than approximately 650 nm.

Inventors:
;
Issue Date:
Research Org.:
Sandia National Lab. (SNL-CA), Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1174635
Patent Number(s):
6665329
Application Number:
10/165,824
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Crawford, Mary H., and Nelson, Jeffrey S. Broadband visible light source based on AllnGaN light emitting diodes. United States: N. p., 2003. Web.
Crawford, Mary H., & Nelson, Jeffrey S. Broadband visible light source based on AllnGaN light emitting diodes. United States.
Crawford, Mary H., and Nelson, Jeffrey S. Tue . "Broadband visible light source based on AllnGaN light emitting diodes". United States. https://www.osti.gov/servlets/purl/1174635.
@article{osti_1174635,
title = {Broadband visible light source based on AllnGaN light emitting diodes},
author = {Crawford, Mary H. and Nelson, Jeffrey S.},
abstractNote = {A visible light source device is described based on a light emitting diode and a nanocluster-based film. The light emitting diode utilizes a semiconductor quantum well structure between n-type and p-type semiconductor materials on the top surface a substrate such as sapphire. The nanocluster-based film is deposited on the bottom surface of the substrate and can be derived from a solution of MoS.sub.2, MoSe.sub.2, WS.sub.2, and WSe.sub.2 particles of size greater than approximately 2 nm in diameter and less than approximately 15 nm in diameter, having an absorption wavelength greater than approximately 300 nm and less than approximately 650 nm.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2003},
month = {12}
}

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Works referenced in this record:

Heterostructure for UV LEDs Based on Thick AlGaN Layers
journal, January 1998


High-power UV InGaN/AlGaN double-heterostructure LEDs
journal, June 1998


Synthesis and optical properties of MoS2 and isomorphous nanoclusters in the quantum confinement regime
journal, June 1997


AlGaN/GaN quantum well ultraviolet light emitting diodes
journal, September 1998